Methods of forming one or more covered voids in a semiconductor substrate
View Patent ↗Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
1. Integrated circuitry comprising:
a semiconductor-on-insulator substrate having a mean outermost global surface; the substrate comprising monocrystalline silicon-containing material, an insulator material over the monocrystalline silicon-containing material, and first elemental-form silicon-comprising material over the insulator material;
a plurality of elongated cooling conduits running generally parallel the mean outermost global surface within the insulator material, the cooling conduits individually comprising opposing sidewalls of the insulator material, the cooling conduits individually comprising a top of second elemental-form silicon-comprising material, the cooling conduits individually comprising a bottom of third elemental-form silicon-comprising material; and
cooling fluid within the cooling conduits.
2. The integrated circuitry of claim 1 wherein the cooling fluid is flowing within the cooling conduits.
3. The integrated circuitry of claim 1 comprising field effect transistor channel regions within the second elemental-form silicon-comprising material that is over the cooling conduits.
4. The integrated circuitry of claim 1 comprising field effect transistor source/drain regions within the second elemental-form silicon-comprising material that is over the cooling conduits.
5. The integrated circuitry of claim 1 comprising field effect transistor channel regions and field effect transistor source/drain regions within the second elemental-form silicon-comprising material that is over the cooling conduits.
6. The integrated circuitry of claim 3 wherein the cooling fluid within the cooling conduits is in physical touching contact with the channel regions.
7. The integrated circuitry of claim 5 wherein the cooling fluid within the cooling conduits is in physical touching contact with the channel regions.
8. The integrated circuitry of claim 1 wherein the insulator material comprises silicon dioxide.
9. The integrated circuitry of claim 1 wherein the insulator material comprises silicon nitride.