Plasma processing apparatus

1. An inductively coupled plasma processing apparatus comprising:

a chamber main body;

a plasma trap installed inside a chamber provided by the chamber main body, and configured to divide the chamber into a first space and a second space;

a mounting table installed in the second space;

a plasma source including an antenna connected to a high-frequency power supply, and configured to excite gases supplied to the first space;

a dielectric window installed between the antenna and the first space; and

a potential adjustment part configured to adjust a potential of a plasma generated in the first space,

wherein the potential adjustment part includes:

an electrode which is a Faraday shield installed between the antenna and the dielectric window, and is configured to be capacitively coupled to the plasma generated in the first space;

an impedance adjustment circuit equipped with a variable reactance element and connected between the electrode and a ground;

a detector configured to detect a peak value of a voltage at the electrode; and

a control part configured to: store data representing a predetermined relationship between an energy of ions incident onto a target object mounted on the mounting table and the peak value of the voltage at the electrode; receive a target value of the energy of the ions incident onto the target object; obtain a target peak value of the voltage at the electrode, which corresponds to the target value of the energy of the ions, with reference to the stored data; and control the variable reactance element of the impedance adjustment circuit so as to reduce a difference between the target peak value and the detected peak value of the voltage at the electrode detected by the detector.