Memory devices configured to perform leak checks

1. A memory device, comprising:

an array of memory cells; and

circuitry for control and/or access of the array of memory cells, the circuitry configured to perform a method comprising:

bringing a selected access line of a program operation to a first voltage;

applying a particular voltage to an unselected access line of the program operation;

while applying the particular voltage to the unselected access line and after bringing the selected access line to the first voltage, sensing a current of the selected access line while applying a reference current to the selected access line;

indicating a fail status of the program operation if an absolute value of the sensed current of the selected access line is greater than a particular current; and

proceeding with the program operation if the absolute value of the sensed current of the selected access line is less than a particular current.

2. The memory device of claim 1 , wherein the method further comprises sensing a current of a third access line adjacent the unselected access line while applying the particular voltage to the unselected access line, and indicating the fail status of the program operation if an absolute value of the sensed current of the third access line is greater than the particular current.

3. The memory device of claim 2 , wherein the method further comprises indicating the fail status for the program operation if the absolute value of the sensed current of either the selected access line or the third access line is greater than the particular current.

4. The memory device of claim 3 , wherein the method further comprises applying a program pulse of the program operation to the selected access line if the fail status of the program operation is not indicated.

5. The memory device of claim 1 , wherein, in the method, sensing the current of the selected access line comprises applying the reference current to the selected access line having an absolute value equal to the particular current.

6. The memory device of claim 5 , wherein, in the method, applying the reference current to the selected access line comprises sourcing the reference current to the selected access line if a voltage of the selected access line is greater than the particular voltage, and sinking the reference current from the selected access line if a voltage of the selected access line is less than the particular voltage.

7. The memory device of claim 5 , wherein, in the method, sensing the current of the selected access line comprises connecting the selected access line to one input of an operational amplifier while applying the reference current to the selected access line.

8. The memory device of claim 7 , wherein the first voltage is a reference voltage, and wherein the method further comprises:

applying the reference voltage to a second input of the operational amplifier while applying the reference current to the selected access line.

9. The memory device of claim 1 , wherein, in the method, applying the particular voltage to the unselected access line comprises applying a voltage pulse subsequent to and conjoined with a pass voltage pulse of the program operation.

10. The memory device of claim 1 , wherein, in the method, applying the particular voltage to the unselected access line comprises applying a voltage pulse having a same voltage level as a pass voltage pulse of the program operation.

11. A memory device, comprising:

an array of memory cells; and

circuitry for control and/or access of the array of memory cells, the circuitry configured to perform a method comprising:

bringing a selected access line of a program operation to a reference voltage after a failed verify of the program operation;

while the selected access line is at the reference voltage, configuring the selected access line to electrically float;

applying a particular voltage to an unselected access line of the program operation;

after configuring the selected access line to electrically float, applying a reference current to the selected access line while applying the particular voltage to the unselected access line;

while applying the particular voltage to the unselected access line and applying the reference current to the selected access line, sensing a current of the selected access line; and

indicating a fail status of the program operation if an absolute value of the sensed current of the selected access line is greater than an absolute value of the reference current.

12. The memory device of claim 11 , wherein, in the method, applying the particular voltage to the unselected access line comprises applying a voltage higher than the reference voltage, and wherein applying the reference current to the selected access line comprises sinking the reference current from the selected access line.

13. The memory device of claim 11 , wherein, in the method, applying the particular voltage to the unselected access line comprises applying a voltage lower than the reference voltage, and wherein applying the reference current to the selected access line comprises sourcing the reference current to the selected access line.

14. The memory device of claim 11 , wherein the method further comprises applying a program pulse of the program operation to the selected access line if the fail status of the program operation is not indicated.

15. The memory device of claim 14 , wherein, in the method, applying the program pulse to the selected access line comprises applying a subsequent program pulse of the program operation at a voltage level higher than a prior program pulse of the program operation.

16. The memory device of claim 11 , wherein the method further comprises proceeding with the program operation if the absolute value of the sensed current of the selected access line is less than the absolute value of the reference current.

17. A memory device, comprising:

an array of memory cells; and

circuitry for control and/or access of the array of memory cells, the circuitry configured to perform a method comprising:

bringing a selected access line of a program operation to a first voltage and configuring the selected access line to electrically float;

applying a particular voltage to an unselected access line of the program operation;

while applying the particular voltage to the unselected access line and after configuring the selected access line to electrically float, sensing a current of the selected access line while applying a reference current to the selected access line;

indicating a fail status of the program operation if an absolute value of the sensed current of the selected access line is greater than a particular current; and

proceeding with the program operation if the absolute value of the sensed current of the selected access line is less than a particular current.

18. The memory device of claim 17 , wherein, in the method, sensing the current of the selected access line comprises:

applying the reference current to the selected access line having an absolute value equal to the particular current.

19. The memory device of claim 18 , wherein, in the method, applying the reference current to the selected access line comprises sinking a current from the selected access line.

20. The memory device of claim 18 , wherein the first voltage is a reference voltage, and wherein the method further comprises:

connecting the selected access line to one input of an operational amplifier while applying the reference current to the selected access line; and

applying the reference voltage to a second input of the operational amplifier while applying the reference current to the selected access line.