Methods and systems for inhibiting bonding materials from contaminating a semiconductor processing tool

1. A semiconductor processing tool comprising:

a bondhead having a first port, a second port, a third port a first channel fluidly coupled to the first port, a second channel fluidly coupled to the second port, and a third channel fluidly coupled to the third port,

wherein the first port the second port, and the third port are coplanar, and

wherein the second and third channels at least partially surrounds the first channel;

a first flow unit coupled to the first port and configured to withdraw air from the first channel;

a second flow unit coupled to the second port and configured to withdraw a fluid from or provide the fluid to the second channel; and

a third flow unit coupled to the third port and configured to provide a second fluid to or withdraw the second fluid from the third channel.

2. The tool of claim 1 wherein—

the first flow unit includes a vacuum unit that creates a first pressure in the first channel,

the second flow unit includes a blower unit that creates a second pressure in the second channel, and

the second pressure is higher than the first pressure.

3. The tool of claim 2 wherein an absolute value of the first pressure is greater than an absolute value of the second pressure.

4. The tool of claim 1 wherein:

the third channel at least partially surrounds the second channel; and

the third port is coplanar with the first and second ports along a laterally-oriented plane.

5. The tool of claim 4 wherein the second flow unit is configured to provide the first fluid to the second channel and the third flow unit is configured to withdraw the second fluid from the third channel.

6. The tool of claim 1 wherein the bondhead is configured to be positioned over a die and a bonding material, and wherein the fluid provided to or withdrawn from the second port at least partially prevents vaporized bonding material from entering the first channel.

7. The tool of claim 1 wherein the first port and the first channel comprise a first opening through the bondhead, and wherein the second port and the second channel together comprise a second opening through the bondhead and completely surrounding the first opening.

8. The tool of claim 1 wherein the bondhead includes a first side and a second side opposite the first side, wherein the first and second ports extend from the first side of the bondhead and at least partially through the bondhead, and wherein the first and second channels extend from the second side of the bondhead and at least partially through the bondhead.

9. The tool of claim 8 wherein the first and second ports and first and second channels each extend through the bondhead to a common depth.

10. The tool of claim 1 wherein the fluid is air and/or nitrogen.

11. A semiconductor processing apparatus comprising:

a bondhead including a first side, a second side opposite the first side, a first opening, a second opening, and a third opening wherein the second and third openings are peripheral to the first opening, wherein the first, second, and third openings each extend from the first side of the bondhead to the second side of the bondhead,

wherein—

the first opening is configured to be coupled to a first flow unit that withdraws a first fluid from the first opening;

the second opening is configured to be coupled to a second flow unit that provides a second fluid to or withdraws the second fluid from the second opening; and

the third opening is coplanar with the first and second openings and is configured to be coupled to a third flow unit that provides a third fluid to or withdraws the third fluid from the third opening.

12. The apparatus of claim 11 wherein the first opening includes a first port and a first channel, and the second opening includes a second port and a second channel.

13. The apparatus of claim 12 wherein the first flow unit includes a vacuum unit and a first conduit coupling the vacuum unit to the first port, and wherein the second flow unit includes a blower unit and a second conduit coupling the blower unit to the second port.

14. The apparatus of claim 11 wherein the first flow unit creates a first pressure in the first opening and the second flow unit creates a second pressure in the second opening, and wherein an absolute value of the first pressure is greater than an absolute value of the second pressure.

15. The apparatus of claim 11 , wherein the third opening is peripheral to and at least partially surrounds the second opening, wherein the third opening is coplanar with the first and second openings along a laterally-oriented plane.

16. The apparatus of claim 15 wherein the second flow unit is configured to provide the second fluid to the second opening and the third flow unit is configured to withdraw the third fluid from the third opening.

17. The apparatus of claim 11 wherein the bondhead is configured to be positioned over a die and bonding material, and wherein the second fluid provided to or withdrawn from the second opening at least partially prevents vaporized bonding material from entering the first opening.

18. A method for inhibiting vaporized bonding material from entering a vacuum system, the method comprising:

withdrawing air, via a first flow unit, from a first port of a bondhead, wherein the first port is fluidly coupled to a first channel of the bondhead;

flowing a fluid, via a second flow unit, through a second port of the bondhead, wherein:

the second port is fluidly coupled to a second channel of the bondhead, and

the second channel at least substantially surrounds the first channel; and

flowing a second fluid, via a third flow unit, through a third port of the bondhead, wherein the third port is coplanar with the first and second ports.

19. The method of claim 18 wherein flowing a fluid includes flowing the fluid toward the bondhead via the second port.

20. The method of claim 19 wherein withdrawing air includes withdrawing pressurized air at a first pressure, and wherein flowing a fluid includes flowing a pressurized fluid at a second pressure greater than the first pressure.

21. The method of claim 18 , further comprising:

positioning the bondhead at least substantially over a die at least partially surrounded by a bonding material, and

wherein flowing a fluid includes preventing at least a portion of the bonding material from flowing through the first port.

22. The method of claim 18 wherein the third port is coplanar with the first and second ports along a laterally-oriented plane.

23. The method of claim 22 wherein flowing a second fluid includes flowing the first fluid toward the bondhead via the second port, and wherein flowing a second fluid includes flowing the second fluid away from the bondhead via the third port.

24. A method of manufacturing a semiconductor processing apparatus, the method comprising:

forming a bondhead having a first port, a second port and a third port peripheral to the first port, a first channel fluidly coupled to the first port, and a second channel fluidly coupled to the second port,

wherein the second channel at least partially surrounds the first channel, and

wherein the first, second, and third ports are coplanar;

coupling a first flow unit to the first port;

coupling a second flow unit to the second port; and

coupling a third flow unit to the third port, wherein the third port is configured to provide a second fluid to or withdraw the second fluid from the third port.

25. The method of claim 24 wherein—

the bondhead includes a first side and a second side opposite the first side,

the first and second ports extend from the first side of the bondhead to an intermediate depth of the bondhead, and

the first and second channels extend from the second side of the bondhead to the intermediate depth of the bondhead.