Gate oxide breakdown in OTP memory cells for physical unclonable function (PUF) security
Gate oxide breakdown in the programming element of an OTP (One-Time Programmable) memory cell can vary widely. The resulting large variations in the conductivity of the programmed memory cells in an OTP memory cell array is used for a PUF (Physically Unclonable Function). A method of obtaining a PUF value from an OTP memory cell array is described.
1. An integrated circuit comprising
an array of OTP (One-Time Programmable) memory cells, each OTP memory cell programmable by rupturing a gate oxide layer in the OTP memory cell, the array of OTP memory cells comprising a subset of the OTP memory cells programmed responsive to gate oxide layer variations in the array of OTP memory cells, the array of OTP memory cells sending contents of the programmed memory cells of the array as output signals in response to input signals; and
a programming circuit coupled to the array of OTP memory cells, the programming circuit configured to generate a plurality of voltage pulses with different voltage values and apply the plurality of voltage pulses to a programming word line of the OTP memory cell for programming the OTP memory cell,
wherein the input signals form a PUF (Physical Unclonable Function) challenge signal to the integrated circuit and the output signals form a PUF (Physical Unclonable Function) response signal to the PUF challenge signal.
2. The integrated circuit of claim 1 , wherein the PUF response signal comprises at least 128 bits.
3. The integrated circuit of claim 2 , wherein the array of OTP memory cells is part of another array of OTP memory cells.
4. The integrated circuit of claim 3 , wherein each of the OTP memory cells comprises a two-transistor OTP memory cell.
5. The integrated circuit of claim 1 , wherein the array of OTP memory cells is part of another array of OTP memory cells.
6. The integrated circuit of claim 1 , wherein each of the OTP memory cells comprises a two-transistor OTP memory cell.
7. A method comprising:
applying a plurality of voltage pulses with different voltage values to a programming word line of at least one OTP (One-Time Programmable) memory cell in an array of OTP memory cells for programming the at least one OTP memory cell, the array of OTP memory cells comprising a subset of the OTP memory cells programmed responsive to gate oxide layer variations in the array of OTP memory cells;
receiving, at the array of OTP memory cells, a PUF challenge signal comprising a set of electrical signals; and
in response to the PUF challenge signal, sending contents of the programmed subset of the OTP memory cells as output signals,
wherein the output signals form a PUF response signal to the PUF challenge signal.
8. The method of claim 7 , wherein the contents of the programmed subset of the OTP memory cells comprise at least 128 bits.
9. The method of claim 7 , wherein the PUF challenge signal comprises m bits and the PUF response signal comprises n bits.
10. The method of claim 9 , wherein the n bits of the PUF response signal comprise at least 128 bits.