IP Library Granted Patent US 10,163,893
Granted Patent B1
US 10,163,893 · App. 15/687,732 · Granted Dec 25, 2018

Apparatus containing circuit-protection devices

Inventor: Michael Smith (Boise, ID)
Assignee: Micron Technologies, Inc.
H01L27/0266G11C16/04G11C16/16G11C16/08
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Quick Facts
Patent No.
US 10,163,893
App. No.
15/687,732
Granted
Dec 25, 2018
Kind
B1
Abstract

Apparatus including an array of memory cells may include circuit-protection devices that may include first and second circuit-protection units, a first gate having a first source/drain connected to a first node of the first circuit-protection unit, and a second gate having a first source/drain connected to a first node of the second circuit-protection unit, wherein a second source/drain of the first gate is connected to a second source/drain of the second gate.

Claims (27)

1. An apparatus, comprising:

an array of memory cells;

a plurality of data lines, each data line of the plurality of data lines connected to a respective set of memory cells of the array of memory cells;

peripheral circuitry for access of the array of memory cells;

a first transistor comprising a control gate, a first source/drain connected to the peripheral circuitry, and a second source/drain connected to a first data line of the plurality of data lines;

a second transistor comprising a control gate, a first source/drain connected to the peripheral circuitry, and a second source/drain connected to a second data line of the plurality of data lines; and

a third transistor comprising a control gate, a first source/drain connected to the second source/drain of the first transistor, and a second source/drain connected to a source of the array of memory cells; and

a fourth transistor comprising a control gate, a first source/drain connected to the second source/drain of the second transistor, and a second source/drain connected to the second source/drain of the third transistor.

2. The apparatus of claim 1 , wherein each data line of the plurality of data lines is selectively connected to its respective set of memory cells of the array of memory cells through a plurality of select gates.

3. The apparatus of claim 1 , wherein the connections to the peripheral circuitry are selective connections.

4. The apparatus of claim 1 , wherein the peripheral circuitry comprises circuitry selected from a group consisting of a data cache and a data register.

5. The apparatus of claim 1 , further comprising:

a fifth transistor comprising a control gate, a first source/drain connected to the peripheral circuitry, and a second source/drain connected to a third data line of the plurality of data lines;

a sixth transistor comprising a control gate, a first source/drain connected to the peripheral circuitry, and a second source/drain connected to a fourth data line of the plurality of data lines;

a seventh transistor comprising a control gate, a first source/drain connected to the second source/drain of the fifth transistor, and a second source/drain connected to the source of the array of memory cells; and

an eighth transistor comprising a control gate, a first source/drain connected to the second source/drain of the sixth transistor, and a second source/drain connected to the second source/drain of the seventh transistor;

wherein the control gate of the first transistor and the control gate of the fifth transistor are commonly connected to a first control line;

wherein the control gate of the second transistor and the control gate of the sixth transistor are commonly connected to a second control line;

wherein the control gate of the third transistor and the control gate of the seventh transistor are commonly connected to a third control line; and

wherein the control gate of the fourth transistor and the control gate of the eighth transistor are commonly connected to a fourth control line.

6. The apparatus of claim 5 , wherein the third control line comprises a spur forming a gate between the first source/drain of the third transistor and the first source/drain of the seventh transistor, and wherein the fourth control line comprises a spur forming a gate between the first source/drain of the fourth transistor and the first source/drain of the eighth transistor.

7. The apparatus of claim 6 , wherein a corner between the third control line and its spur is rounded, and wherein a corner between the fourth control line and its spur is rounded.

8. The apparatus of claim 6 , wherein the spur of the third control line extends over an isolation region between the first source/drain of the first transistor and the first source/drain of the fifth transistor, and wherein the spur of the fourth control line extends over an isolation region between the first source/drain of the second transistor and the first source/drain of the sixth transistor.

9. The apparatus of claim 8 , wherein the first control line comprises a spur extending toward the spur of the third control line and over the isolation region between the first source/drain of the first transistor and the first source/drain of the fifth transistor, and wherein the second control line comprises a spur extending toward the spur of the fourth control line and over the isolation region between the first source/drain of the second transistor and the first source/drain of the sixth transistor.

10. The apparatus of claim 9 , wherein a corner between the first control line and its spur is rounded, and wherein a corner between the second control line and its spur is rounded.

11. The apparatus of claim 5 , wherein the third control line and the fourth control line are electrically connected.

12. The apparatus of claim 5 , further comprising an isolation region between the first source/drain of the first transistor and the first source/drain of the fifth transistor, and an isolation region between the first source/drain of the second transistor and the first source/drain of the sixth transistor.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050709/0838 →
RELEASE OF SECURITY INTEREST Recorded Jul 20, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 046597/0333 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 6 TO PATENT SECURITY AGREEMENT Recorded Nov 1, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 044348/0253 →
SUPPLEMENT NO. 6 TO PATENT SECURITY AGREEMENT Recorded Nov 1, 2017
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 044653/0333 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 28, 2017
From: SMITH, MICHAEL A.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 043420/0796 →
Cited By (1)
US 12,400,956