SUBSTRATE PROCESSING APPARATUS
A substrate processing apparatus includes: a single frequency process chamber installed inside a process module and for processing a substrate on which an insulating film is formed; a two-frequency process chamber installed adjacent to the single frequency process chamber inside the process module and for processing the substrate processed in the single frequency process chamber; a gas supply part configured to supply a silicon-containing gas containing at least silicon and an impurity to each of the process chambers; a plasma generation part connected to each of the process chambers; an ion control part connected to the two-frequency process chamber; a substrate transfer part installed inside the process module and configured to transfer the substrate between the single frequency process chamber and the two-frequency process chamber; and a controller configured to control at least the gas supply part, the plasma generation part, the ion control part, and the substrate transfer part.
1 . A substrate processing apparatus, comprising:
a single frequency process chamber installed inside a process module and configured to process a substrate on which an insulating film is formed, an upper portion and a lower portion of the single frequency process chamber including a shower head and a substrate mounting part, respectively;
a two-frequency process chamber installed adjacent to the single frequency process chamber inside the process module and configured to process the substrate processed in the single frequency process chamber, the two-frequency process chamber including a shower head and a substrate mounting part;
a gas supply part configured to supply a silicon-containing gas containing at least silicon and an impurity to each of the single frequency process chamber and the two-frequency process chamber;
a plasma generation part connected to each of the single frequency process chamber and the two-frequency process chamber, the plasma generation part comprising:
a high frequency power source connected to the shower heads of the single frequency process chamber and the two-frequency process chamber;
an ion control part connected to the substrate mounting part of the two-frequency process chamber;
a substrate transfer part installed inside the process module and configured to transfer the substrate between the single frequency process chamber and the two-frequency process chamber; and
a controller configured to control at least the gas supply part, the plasma generation part, the ion control part, and the substrate transfer part.
2 . The apparatus of claim 1 , wherein the single frequency process chamber is installed in a plural number,
a first single frequency process chamber of the plural number of single frequency process chambers is installed at an upstream side in a movement direction of the substrate when viewed from the two-frequency process chamber, and
a second single frequency process chamber of the plural number of single frequency process chambers is installed at a downstream side in the movement direction of the substrate when viewed from the two-frequency process chamber.
3 . The apparatus of claim 2 , wherein the substrate transfer part includes a rotary shaft, and a rotary tray on which a plurality of substrates are mounted in a circumferential shape.
4 . The apparatus of claim 3 , wherein the ion control part includes a low-frequency power source, and the controller is configured to control the low-frequency power source to supply a low frequency in the form of a pulse to the two-frequency process chamber.
5 . The apparatus of claim 4 , wherein an assist gas supply part configured to supply argon is connected to the two-frequency process chamber.
6 . The apparatus of claim 3 , wherein an assist gas supply part configured to supply argon is connected to the two-frequency process chamber.
7 . The apparatus of claim 2 , wherein the ion control part includes a low-frequency power source, and the controller is configured to control the low-frequency power source to supply a low frequency in the form of a pulse to the two-frequency process chamber.
8 . The apparatus of claim 7 , wherein an assist gas supply part configured to supply argon is connected to the two-frequency process chamber.
9 . The apparatus of claim 2 , wherein an assist gas supply part configured to supply argon is connected to the two-frequency process chamber.
10 . The apparatus of claim 1 , wherein the substrate transfer part includes a rotary shaft, and a rotary tray on which a plurality of substrates are mounted in a circumferential shape.
11 . The apparatus of claim 10 , wherein the ion control part includes a low-frequency power source, and the controller is configured to control the low-frequency power source to supply a low frequency in the form of a pulse to the two-frequency process chamber.
12 . The apparatus of claim 11 , wherein an assist gas supply part configured to supply argon is connected to the two-frequency process chamber.
13 . The apparatus of claim 10 , wherein an assist gas supply part configured to supply argon is connected to the two-frequency process chamber.
14 . The apparatus of claim 1 , wherein the ion control part includes a low-frequency power source, and the controller is configured to control the low-frequency power source to supply a low frequency in the form of a pulse to the two-frequency process chamber.
15 . The apparatus of claim 14 , wherein an assist gas supply part configured to supply argon is connected to the two-frequency process chamber.
16 . The apparatus of claim 1 , wherein an assist gas supply part configured to supply argon is connected to the two-frequency process chamber.
17 . The apparatus of claim 4 , wherein the low frequency supplied from the low frequency power source ranges from 1 to 400 KHz.
18 . The apparatus of claim 1 , wherein a frequency supplied from the high frequency power source is about 13.56 MHz.