Light emitting structure
A light-emitting structure includes a semiconductor light-emitting element, a first connection point and a reflective element. The semiconductor light-emitting element includes a bottom surface, a top surface opposite to the bottom surface, and a side surface arranged between the bottom surface and the top surface. The first connection point is arranged on the bottom surface. The reflective element includes a first portion arranged right beneath the bottom surface, and a second portion not overlapping the bottom surface and uplifted from a lower elevation lower than the bottom surface to a higher elevation substantially equal to that of the top surface along a curved path.
1. A light-emitting structure, comprising:
a semiconductor light-emitting element comprising a bottom surface, a top surface opposite to the bottom surface, and a side surface arranged between the bottom surface and the top surface;
a first connection point arranged under the bottom surface; and
a reflective element, comprising an inner sidewall having a first portion arranged right beneath the bottom surface, and a second portion not overlapping the bottom surface and uplifted from a lower elevation lower than the bottom surface to a higher elevation substantially equal to that of the top surface along a curved path,
wherein the curved path has a first slope variation from a first smaller value to a first greater value, and a second slope variation from a second greater value to a second smaller value.
2. The light-emitting structure of claim 1 , wherein the first connection point contacts the reflective element.
3. The light-emitting structure of claim 1 , wherein the reflective element further comprises an outer surface substantially parallel to the side surface and connected to the second portion.
4. The light-emitting structure of claim 1 , wherein the bottom surface has a portion not covered by the reflective element.
5. The light-emitting structure of claim 1 , further comprising a wavelength conversion layer formed on the top surface.
6. The light-emitting structure of claim 5 , wherein the wavelength conversion layer comprises a topmost surface higher than the second portion.
7. The light-emitting structure of claim 5 , wherein the wavelength conversion layer directly contacts the top surface.
8. The light-emitting structure of claim 5 , wherein the wavelength conversion layer is extended beyond the side surface.
9. The light-emitting structure of claim 1 , wherein the reflective element has an uppermost surface, a lowermost surface opposite to the uppermost surface, and a space between the uppermost surface and the lowermost surface which is fully occupied by a single material.
10. The light-emitting structure of claim 1 , further comprising a second connection point arranged under the bottom surface.
11. The light-emitting structure of claim 10 , wherein the reflective element has a part arranged between the first connection point and the second connection point.
12. A light-emitting structure, comprising:
a semiconductor light-emitting element comprising a bottom surface, a top surface opposite to the bottom surface, and a side surface arranged between the bottom surface and the top surface;
a first connection point and a second connection point arranged under the bottom surface; and
a reflective element, comprising a part arranged between the first connection point and the second connection point and an inner sidewall having a first portion arranged right beneath the bottom surface, and a second portion not overlapping the bottom surface and uplifted from a lower elevation lower than the bottom surface to a higher elevation substantially equal to that of the top surface along a curved path,
wherein the semiconductor light-emitting element is separated from the second portion by a distance which is gradually increased along a direction normal to the side surface, and
wherein the curved path has a first slope variation from a first smaller value to a first greater value, and a second slope variation from a second greater value to a second smaller value.
13. The light-emitting structure of claim 12 , wherein the second portion comprises a curved surface, a beveled surface, or a combination thereof.
14. The light-emitting structure of claim 12 , further comprising a wavelength conversion layer formed on the top surface.
15. The light-emitting structure of claim 14 , wherein the wavelength conversion layer comprises a topmost surface higher than the second portion.
16. The light-emitting structure of claim 14 , wherein the wavelength conversion layer directly contacts the top surface.
17. The light-emitting structure of claim 14 , wherein the wavelength conversion layer is extended beyond the side surface.
18. The light-emitting structure of claim 12 , wherein the reflective element has an uppermost surface, a lowermost surface opposite to the uppermost surface and a space between the uppermost surface and the lowermost surface which is fully occupied by a single material.