Solid state transducer devices with separately controlled regions, and associated systems and methods
Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.
1. A method for manufacturing a solid state transducer, comprising:
coupling a first electrical contact to a first portion of a solid state transducer die,
the solid state transducer die having:
a first semiconductor material having a planar active surface;
a second semiconductor material; and,
a light-emitting active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region;
coupling a second electrical contact to a second portion of the solid state transducer die, with the first and second contacts positioned apart from each other at the first semiconductor material, wherein the first and second contacts together cover at least a portion of the first semiconductor material, wherein at least one of the first and second contacts is transmissive to light passing outwardly from the solid state transducer die and through the at least one of the first and second contacts;
coupling a third electrical contact to the second semiconductor material of the solid state transducer die, the third electrical contact being vertically aligned with the first electrical contact, wherein a first direct electrical pathway is formed between the third electrical contact and the first electrical contact passing through the first region; and
coupling a fourth electrical contact to the second semiconductor material of the solid state transducer die, the fourth electrical contact being vertically aligned with the second electrical contact, wherein a second direct electrical pathway is formed between the fourth electrical contact and the second electrical contact passing through the second region,
wherein the first and second electrical pathways are separately electrically controllable, and the first and second contacts are each separated from the at least one additional contact by the same distance.
2. The method of claim 1 , further comprising coupling a controller to the first and second electrical contacts to control delivery of corresponding first and second electrical inputs.
3. The method of claim 2 , further comprising:
coupling a detector between the controller and the first and second contacts; and
programming the controller to direct the first and second electrical inputs at least in part in response to a signal received from the detector, the signal corresponding to a characteristic of an output from the die.
4. The method of claim 1 , further comprising coupling the at least one additional electrical contact to the second semiconductor material of the solid state transducer die.
5. The method of claim 1 , further comprising forming a trench between the first and second contacts.
6. The method of claim 5 , further comprising disposing a dielectric material in the trench.