Integrated assemblies having structures along a first pitch coupled with structures along a second pitch different from the first pitch
Some embodiments include methods of forming integrated assemblies. First conductive structures are formed within an insulative support material and are spaced along a first pitch. Upper regions of the first conductive structures are removed to form first openings extending through the insulative support material and over lower regions of the first conductive structures. Outer lateral peripheries of the first openings are lined with spacer material. The spacer material is configured as tubes having second openings extending therethrough to the lower regions of the first conductive structures. Conductive interconnects are formed within the tubes. Second conductive structures are formed over the spacer material and the conductive interconnects. The second conductive structures are spaced along a second pitch, with the second pitch being less than the first pitch. Some embodiments include integrated assemblies.
1. An integrated assembly, comprising:
first conductive structures spaced along a first pitch along a cross-section; the first conductive structures having a first width along the cross-section;
second conductive structures over the first conductive structures and spaced along a second pitch along the cross-section, the second pitch being less than or equal to about one-half of the first pitch; the second conductive structures having a second width along the cross-section which is less than the first width; more than one of the second conductive structures being directly over each of the first conductive structures along the cross-section; and
conductive interconnects extending upwardly from each of the first conductive structures to couple each of the first conductive structures with only one of the second conductive structures directly over each of the first conductive structures; some of the second conductive structures being directly over the first conductive structures and not being coupled to the first conductive structures through the conductive interconnects; said some of the second conductive structures being vertically spaced from the first conductive structures by intervening insulative material.
2. The integrated assembly of claim 1 wherein the second pitch is less than or equal to about one-third of the first pitch.
3. The integrated assembly of claim 1 wherein the second pitch is about one-fourth of the first pitch.
4. The integrated assembly of claim 1 wherein there are additional second conductive structures which are not directly over the first conductive structures along the cross-section; wherein the intervening insulative material is a first insulative material; and wherein the additional second conductive structures are directly on a second insulative material.
5. The integrated assembly of claim 4 wherein the second insulative material is a same composition as the first insulative material.
6. The integrated assembly of claim 4 wherein the second insulative material is a different composition relative to the first insulative material.
7. The integrated assembly of claim 6 wherein the second insulative material comprises silicon dioxide and the first insulative material comprises silicon nitride.
8. The integrated assembly of claim 1 wherein the intervening insulative material is configured as hollow tubes, and wherein the conductive interconnects extend upwardly within said hollow tubes.