Semiconductor device and electrical apparatus
According to an embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the second conductivity type, a gate electrode, and a second electrode. The first semiconductor region is provided on the first electrode. The first semiconductor region includes first portions and first protruding portions. The first portions are arranged along a first direction and a second direction perpendicular to the first direction. The first protruding portions respectively protrude from the first portions. The second semiconductor regions are spaced from each other and provided in the first semiconductor region. The third semiconductor region is provided on the first semiconductor region and the second semiconductor regions.
1. A semiconductor device comprising:
a first electrode;
a first semiconductor region of a first conductivity type provided on the first electrode, the first semiconductor region including a plurality of first portions and a plurality of first protruding portions,
the first portions being arranged along a first direction and a second direction perpendicular to the first direction, and
the first protruding portions respectively protruding from the first portions;
a plurality of second semiconductor regions of a second conductivity type spaced from each other, the second semiconductor regions being provided in the first semiconductor region other than the first portions and the first protruding portions;
a third semiconductor region of the second conductivity type provided on the first semiconductor region and the second semiconductor regions;
a fourth semiconductor region of the first conductivity type provided on the third semiconductor region;
a fifth semiconductor region of the second conductivity type selectively provided on the fourth semiconductor region;
a gate electrode opposed to the fourth semiconductor region with a gate insulating layer interposed; and
a second electrode provided on the fifth semiconductor region.
2. The device according to claim 1 , wherein length in the first direction of the first portion is not less than three times and not more than 40 times of distance in the first direction between the second semiconductor regions.
3. The device according to claim 1 , wherein
the first protruding portion protrudes from the first portion along a third direction crossing the first direction and the second direction, and
length in the third direction of the first protruding portion is longer than length in a fourth direction perpendicular to the third direction of the first protruding portion.
4. The device according to claim 3 , wherein
length in the first direction of the first portion is longer than the length in the third direction of the first protruding portion, and
the length in the third direction of the first protruding portion is not less than 1.4 times and not more than 19 times of distance in the first direction between the second semiconductor regions.
5. The device according to claim 4 , wherein
the first semiconductor region further includes a plurality of second protruding portions, and
the second protruding portions each protrude from the first portions along the fourth direction perpendicular to the third direction.
6. The device according to claim 5 , wherein length in the fourth direction of the second protruding portion is not less than 1.4 times and not more than 19 times of the distance in the first direction between the second semiconductor regions.
7. The device according to claim 1 , wherein
the first protruding portion protrudes from the first portion along the first direction, and
length in the third direction of the first protruding portion is not less than 1.0 times and not more than 13 times of distance in the first direction between the second semiconductor regions.
8. The device according to claim 7 , wherein
length in the first direction of the first portion is longer than length in the second direction of the first protruding portion, and
the length in the second direction of the first protruding portion is not less than 1.3 times and not more than four times of the distance in the first direction between the second semiconductor regions.
9. The device according to claim 8 , wherein
the first semiconductor region further includes a plurality of second protruding portions, and
the second protruding portions each protrude from the first portions along the second direction.
10. The device according to claim 9 , wherein length in the second direction of the second protruding portion is not less than 1.0 times and not more than 13 times of the distance in the first direction between the second semiconductor regions.
11. The device according to claim 1 , further comprising:
a third electrode spaced from the second electrode,
wherein the third electrode is electrically connected to the gate electrode, and
at least part of the first portions are opposed to the gate electrode in a fifth direction from the first electrode to the second electrode.
12. The device according to claim 11 , wherein at least part of the first protruding portions are opposed to the gate electrode in the fifth direction.
13. A semiconductor device comprising:
a first electrode;
a first semiconductor region of a first conductivity type provided on the first electrode, the first semiconductor region including a plurality of first portions and a plurality of second portions,
the first portions being arranged along a first direction and spaced from each other,
the second portions being arranged along the first direction, the second portions being spaced from each other, the second portions being spaced from the first portions in a second direction perpendicular to the first direction, and
at least part of the first portions being not aligned with at least part of the second portions in the second direction;
a plurality of second semiconductor regions of a second conductivity type spaced from each other, the second semiconductor regions being provided in the first semiconductor region other than the first portions and the second portions;
a third semiconductor region of the second conductivity type provided on the first semiconductor region and the second semiconductor regions;
a fourth semiconductor region of the first conductivity type provided on the third semiconductor region;
a fifth semiconductor region of the second conductivity type selectively provided on the fourth semiconductor region;
a gate electrode opposed to the fourth semiconductor region with a gate insulating layer interposed; and
a second electrode provided on the fifth semiconductor region.
14. The device according to claim 13 , wherein length in the first direction of the first portion is not less than three times and not more than 40 times of distance in the first direction between the second semiconductor regions.
15. The device according to claim 13 , wherein
the first semiconductor region further includes a plurality of first protruding portions provided along a third direction crossing the first direction and the second direction, and
the first protruding portions are each provided between of first portions and the second portions.
16. The device according to claim 13 , wherein
the first semiconductor region includes a plurality of first protruding portions,
part of the first protruding portions each protrude from the first portions along a third direction crossing the first direction and the second direction, and
other part of the first protruding portions each protrude from the second portions along the third direction.
17. The device according to claim 13 , wherein part of the second semiconductor regions are provided around one of the first portions, and length in a direction from the part of the second semiconductor regions to the one first portion is longer than length in a direction perpendicular to the direction.
18. A semiconductor device comprising:
a first electrode;
a first semiconductor region of a first conductivity type provided on the first electrode, the first semiconductor region including a plurality of first portions, the first portions being arranged along a first direction and a second direction perpendicular to the first direction;
a plurality of second semiconductor regions of a second conductivity type provided in the first semiconductor region other than the first portions and spaced from each other, part of the second semiconductor regions being provided around one of the first portions, and length of one of the second semiconductor region in a direction from the part of the second semiconductor regions to the one of the first portions being longer than length of the one of the second semiconductor region in a direction perpendicular to the direction;
a third semiconductor region of the second conductivity type provided on the first semiconductor region and the second semiconductor regions;
a fourth semiconductor region of the first conductivity type provided on the third semiconductor region;
a fifth semiconductor region of the second conductivity type selectively provided on the fourth semiconductor region;
a gate electrode opposed to the fourth semiconductor region with a gate insulating layer interposed; and
a second electrode provided on the fifth semiconductor region.
19. The device according to claim 18 , wherein
the first semiconductor region further includes a plurality of first protruding portions, and
the first protruding portions each protrude from the first portions.
20. An electrical apparatus comprising:
a plurality of the semiconductor devices according to claim 1 ; and
a bridge circuit constituted by the semiconductor devices.