Ferroelectric memory cell sensing

1. A method, comprising:

virtually grounding a digit line that is in electronic communication with a ferroelectric capacitor of a ferroelectric memory cell and a virtual ground;

applying a voltage to a plate of the ferroelectric capacitor until a threshold associated with applying the voltage is reached based at least in part on virtually grounding the digit line and before sensing a logic state of the ferroelectric memory cell as part of a read operation; and

isolating the digit line from the virtual ground after applying the voltage to the plate of the ferroelectric capacitor.

2. The method of claim 1 , further comprising:

determining that the threshold has been reached based at least in part on a magnitude of the voltage applied to the plate.

3. The method of claim 1 , wherein virtually grounding the digit line comprises:

activating a switching component that is in electronic communication with the digit line and the virtual ground, and wherein isolating the digit line from the virtual ground comprises:

deactivating the switching component.

4. The method of claim 3 , wherein deactivating the switching component comprises:

reducing a linear equalization voltage applied to the switching component.

5. The method of claim 3 , further comprising:

activating a selection component that is in electronic communication with the ferroelectric capacitor for a sense operation of the ferroelectric memory cell after activating the switching component.

6. The method of claim 5 , wherein activating the selection component comprises:

applying a voltage to a word line in electronic communication with the ferroelectric memory cell.

7. The method of claim 4 , wherein the threshold is associated with a duration following the application of the voltage to the plate of the ferroelectric capacitor.

8. The method of claim 7 , wherein the duration is determined based at least in part on a timing associated with an access operation of the ferroelectric memory cell, or a removing a parasitic voltage from the digit line, or both.

9. The method of claim 1 , wherein applying the voltage to the plate of the ferroelectric capacitor comprises ramping the voltage applied to the plate of the ferroelectric capacitor.

10. A method, comprising:

virtually grounding a digit line that is in electronic communication with a ferroelectric capacitor of a ferroelectric memory cell and a virtual ground;

applying a first voltage to a plate of the ferroelectric capacitor while the digit line is virtually grounded;

reducing a second voltage applied to a switching component that is in electronic communication with the digit line and the virtual ground based at least in part on applying the first voltage; and

applying a third voltage to a word line in electronic communication with the ferroelectric memory cell, wherein the third voltage applied to the word line increases while the second voltage is reduced.

11. The method of claim 10 , further comprising:

isolating the digit line from the virtual ground after applying the first voltage to the plate of the ferroelectric capacitor and after a threshold associated with applying the first voltage is reached based at least in part on reducing the second voltage.

12. The method of claim 11 , wherein the threshold is associated with a duration following the application of the first voltage to the plate of the ferroelectric capacitor.

13. The method of claim 12 , wherein the duration is determined based at least in part on a timing associated with reading or writing to the ferroelectric memory cell or a removing a voltage from the digit line, or both.

14. The method of claim 10 , wherein applying the first voltage to the plate occurs before sensing a logic state of the ferroelectric memory cell as part of a read operation.

15. The method of claim 11 , further comprising:

determining that the threshold has been reached, wherein the threshold is associated with at least one of a magnitude of a voltage of the plate, or a rate of change of the voltage of the plate, or both.

16. The method of claim 10 , further comprising:

activating a selection component that is in electronic communication with the ferroelectric capacitor for a sense operation of the ferroelectric memory cell after the second voltage is reduced, wherein applying the third voltage to the word line is based at least in part on activating the selection component.

17. A method, comprising:

virtually grounding a digit line that is in electronic communication with a ferroelectric capacitor of a ferroelectric memory cell and a virtual ground;

applying a first voltage to a plate of the ferroelectric capacitor until a threshold associated with applying the first voltage is reached based at least in part on virtually grounding the digit line; and

reducing a second voltage applied to a switching component that is in electronic communication with the digit line and the virtual ground, wherein the first voltage applied to the plate is increased while the second voltage is reduced.

18. The method of claim 17 , further comprising:

isolating the digit line from the virtual ground after applying the first voltage to the plate of the ferroelectric capacitor and after the threshold associated with applying the first voltage is reached based at least in part on reducing the second voltage.

19. The method of claim 17 , wherein applying the first voltage to the plate occurs before sensing a logic state of the ferroelectric memory cell as part of a read operation.

20. The method of claim 17 , wherein applying the first voltage to the plate of the ferroelectric capacitor comprises ramping a voltage applied to the plate of the ferroelectric capacitor.