Self-powered GHZ solution-processed hybrid perovskite photodetectors

1. A semiconductor device, comprising:

a cathode layer comprising copper;

an anode layer comprising indium tin oxide (ITO);

an active layer disposed between the cathode layer and the anode layer, where the active layer includes a perovskite layer, wherein the perovskite layer includes an organometal trihalide perovskite or CH 3 NH 3 PbI 2 X, where X includes at least one of Cl, Br, or I; and

an electron extraction layer disposed between the cathode layer and the active layer, the electron extraction layer comprising a layer of C 60 directly disposed on the active layer.

2. The semiconductor device of claim 1 , further comprising:

a first buffer layer disposed between the electron extraction layer and the cathode; and

a second buffer layer disposed between the active layer and the anode, the first buffer layer having a higher electron conductivity than the second buffer layer, the second buffer layer having a higher hole conductivity than the first buffer layer.

3. The semiconductor device of claim 1 , wherein the layer of C 60 has a thickness of between about 1 nm and about 100 nm.

4. The semiconductor device of claim 1 , wherein the active layer has a thickness of between about 1 nm and about 10 μm.

5. The semiconductor device of claim 2 , wherein:

the first buffer layer comprises at least one of bathocuproine (BCP), poly(3,4-ethylenedioxithiophene) (PEDOT) doped with poly(styrene sulfonicacid) (PSS), 4,4′bis[(ptrichlorosilylpropylphenyl)phenylamino]biphenyl (TPD-Si 2 ), poly(3-hexyl-2,5-thienylene vinylene) (P3HTV) and C60, copper phthalocyanine (CuPc), poly[3,4-( 1 hydroxymethyl) ethylenedioxythiophene] (PHEDOT), n-dodecylbenzenesulfonic acid/hydrochloric acid-doped poly(aniline) nanotubes (a-PANIN)s, poly(styrenesulfonic acid)-graft-poly(aniline) (PSSA-g-PANI), poly[(9,9-dioctylfluorene)-co-N-(4-(1-methylpropyl)phenyl)diphenylamine] (PFT), 4,4′bis[(p-trichlorosilylpropylphenyl)phenylamino] biphenyl (TSPP), 5,5′-bis[(p-trichlorosilylpropylphenyl) phenylamino]-2,20-bithiophene (TSPT), N-propyltriethoxysilane, 3,3,3-trifluoropropyltrichlorosilane or3-aminopropyltrhoxysilanepoly[bis(4-phenyl)(2, 4, 6-trimethylphenyl amine ] (PTAA), V 2 O 5 , VO X , MoO 3 , WO 3 , ReO 3 , NiOx, AgO x /PEDOT:PSS, Cu 2 O, CuSCN/P3HT, or Au nanoparticles; and

the second buffer layer comprises at least one of Poly[bis(4-phenyl)(2,4,6-trimethylphenyl) amine] (PTAA), LiF, CsF, LiCoO 2 , CS2CO 3 , TiO x , TiO 2 nanorods (NRs), ZnO, ZnO nanorods (NRs), ZnO nanoparticles (NPs), ZnO, Al 2 O 3 , CaO, bathocuproine (BCP), copper phthalocyanine (CuPc), pentacene, pyronin B, [6,6]-phenyl C 61 -butyric acid methyl ester (PCBM), [6,6]-phenyl C 61 -butyric acid methyl ester (PC70BM), pentadecafluorooctyl phenyl-C 60 -butyrate (F-PCBM), C 60 , C 60 /LiF, ZnO NRs/PCBM, ZnO/cross-linked fullerene derivative (C-PCBSD), single walled carbon nanotubes (SWCNT), poly(ethylene glycol) (PEG), poly(dimethylsiloxaneblock-methyl methacrylate) (PDMS-b-PMMA), polar polyfluorene (PF-EP), polyfluorene bearing lateral amino groups (PFN), polyfluorene bearing quaternary ammonium groups in the side chains (WPF-oxy-F), polyfluorene bearing quaternary ammonium groups in the side chains (WPF-6-oxy-F), fluorene alternating and random copolymer bearing cationic groups in the alkyl side chains (PFNBr-DBTI5), fluorene alternating and random copolymer bearing cationic groups in the alkyl side chains (PFPNBr), or poly(ethylene oxide) (PEO).

6. A semiconductor device, comprising:

a cathode layer comprising copper;

an anode layer comprising indium tin oxide (ITO);

an active layer disposed between the cathode layer and the anode layer, where the active layer includes an organometal trihalide perovskite layer or CH 3 NH 3 PbI 2 X, where X includes at least one of Cl, Br, or I;

an electron extraction layer disposed between the cathode layer and the active layer, the electron extraction layer comprising a layer of C 60 directly disposed on the active layer;

a first buffer layer comprising bathocuproine (BCP) and disposed between the electron extraction layer and the cathode; and

a second buffer layer comprising Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) and disposed between the active layer and the anode.

7. The semiconductor device of claim 6 , wherein the layer of C 60 has a thickness of between about 1 nm and about 100 nm.

8. The semiconductor device of claim 6 , wherein the active layer has a thickness of between about 1 nm and about 10 μm.

9. The semiconductor device of claim 6 , wherein the active layer presents an active device area of between about 0.04 mm 2 to about 7 mm 2 .

10. A photodetection system, comprising:

an excitation source, configured to illuminate a target area with excitation light;

a lens system configured to direct light emanating from the target area onto a photodetector;

the photodetector, wherein the photodetector comprises:

a cathode layer comprising copper

an anode layer comprising indium tin oxide (ITO);

an active layer disposed between the cathode layer and the anode layer, where the active layer includes a perovskite layer, wherein the perovskite layer includes an organometal trihalide perovskite or CH 3 NH 3 PbI 2 X, where X includes at least one of Cl, Br, or I; and

an electron extraction layer disposed between the cathode layer and the active layer, the electron extraction layer comprising a layer of C 60 directly disposed on the active layer; and

an intelligence module, comprising a processor, configured to process signals received from electrodes connected to the cathode layer and the anode layer.

11. The system of claim 10 , wherein the excitation light has a first frequency bandwidth, and wherein the light emanating from the target area includes light having a second sample bandwidth different from the first frequency bandwidth.

12. The system of claim 10 , further including a filter position between the target area and the photodetector, the filter configured to filter the excitation light.