Memory device with reduced neighbor memory cell disturbance

1. An apparatus, comprising:

a memory array comprising a first memory cell and a second memory cell, wherein the first memory cell includes a storage element and a selector device, the first memory cell and the second memory cell being coupled with a digit line; and

a control circuit coupled with the memory array, the control circuit configured to:

select the first memory cell as part of performing an access operation using an access line coupled with the first memory cell;

discharge an electrical current on the digit line using the second memory cell during a first time period of the access operation; and

access the storage element of the first memory cell using the selector device during a second time period of the access operation.

2. The apparatus of claim 1 , wherein the control circuit is further configured to:

supply the electrical current to the first memory cell during the second time period.

3. The apparatus of claim 1 , wherein the control circuit is further configured to:

isolate coupled with the second memory cell from the digit line during the second time period.

4. The apparatus of claim 1 , wherein the second memory cell is located at a predetermined position of the memory array.

5. The apparatus of claim 1 , wherein:

the memory array further comprises a third memory cell coupled with a second digit line different from the digit line, the third memory cell being different from the first memory cell and the second memory cell; and

the control circuit is further configured to discharge a second electrical current induced on the second digit line by the electrical current on the digit line during the first time period.

6. The apparatus of claim 5 , wherein the control circuit is further configured to:

bias a first access line coupled with the second memory cell and the third memory cell during the first time period.

7. The apparatus of claim 5 , wherein:

the memory array further comprises a fourth memory cell coupled with the second digit line, the fourth memory cell being different from the first memory cell, the second memory cell, and the third memory cell; and

the control circuit is further configured to maintain a voltage supplied to the fourth memory cell relative to a voltage threshold during the second time period.

8. The apparatus of claim 7 , wherein the control circuit is further configured to:

bias a second access line coupled with the first memory cell and the fourth memory cell during the second time period.

9. A method, comprising:

supplying, from a current source, an electrical current to a digit line operatively coupled with a first memory cell and a second memory cell during at least a portion of an access operation;

discharging, at the second memory cell using a second access line coupled with the second memory cell, the electrical current supplied by the digit line during a first time period of the access operation; and

accessing the first memory cell using a first access line coupled with the first memory cell during a second time period of the access operation.

10. The method of claim 9 , further comprising:

coupling the second memory cell with the digit line during the first time period.

11. The method of claim 10 , further comprising:

isolating coupled with the second memory cell from the digit line during the second time period.

12. The method of claim 9 , further comprising:

discharging a second electrical current induced on a second digit line during the first time period using a third memory cell coupled with the second digit line.

13. An apparatus, comprising:

a memory array comprising a first memory cell coupled with a first digit line and a second memory cell coupled with a second digit line, wherein the first memory cell includes a storage element and a selector device; and

a control circuit coupled with the memory array, the control circuit configured to:

supply, from a current source, a first electrical current to the first digit line as part of an access operation;

discharge, using the second memory cell using a second access line coupled with the second memory cell, a second electrical current induced on the second digit line during a first time period of the access operation by the first electrical current; and

access the storage element of the first memory cell via the selector device using a first access line coupled with the first memory cell during a second time period of the access operation using the first electrical current supplied via the first digit line.

14. The apparatus of claim 13 , wherein the control circuit is further configured to:

select the first memory cell to perform the access operation, wherein supplying the first electrical current is based at least in part on the control circuit selecting the first memory cell.

15. The apparatus of claim 13 , further comprising:

a first word line coupled with the first memory cell to selectively couple the first memory cell to the first digit line; and

a second word line coupled with the second memory cell to selectively couple the second memory cell to the second digit line, wherein the first word line is different from the second word line.

16. The apparatus of claim 13 , wherein the second memory cell is positioned at a predetermined position of the memory array.

17. The apparatus of claim 13 , wherein the second digit line is adjacent to the first digit line.

18. The apparatus of claim 13 , wherein:

the memory array further comprises a third memory cell coupled with a third digit line; and

the control circuit is further configured to discharge a third electrical current induced on the third digit line during the first time period by the first electrical current.

19. The apparatus of claim 18 , wherein the second digit line and the third digit line are adjacent to the first digit line.

20. The apparatus of claim 13 , wherein at least one of the first memory cell or the second memory cell comprises a chalcogenide alloy.