Si-containing film forming precursors and methods of using the same
Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH 3 ) 2 N—SiH 2 —X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C 4 -C 10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.
1. An ALD silicon and oxygen containing film formation process, the process comprising the steps of:
depositing a silicon and oxygen containing film on a substrate by sequentially introducing a vapor of a mono-substituted TSA precursor and an oxygen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH 3 ) 2 N—SiH 2 —X, wherein X is a halogen atom or an amino group [—NR 2 ] and each R is independently selected from the group consisting of H; a C 1 -C 6 hydrocarbyl group; or a silyl group [SiR′ 3 ] with each R′ being independently selected from H or a C 1 -C 6 hydrocarbyl group.
2. The ALD silicon and oxygen containing film formation process of claim 1 , wherein X is Cl.
3. The ALD silicon and oxygen containing film formation process of claim 1 , wherein X is NiPr 2 .
4. The ALD silicon and oxygen containing film formation process of claim 1 , wherein X is NEt 2 .
5. The ALD silicon and oxygen containing film formation process of claim 1 , wherein X is N(SiH 3 ) 2 .
6. The ALD silicon and oxygen containing film formation process of claim 1 , wherein the oxygen-containing reactant is selected from the group consisting of O 2 , O 3 , H 2 O, H 2 O 2 , NO, NO 2 , N 2 O, alcohols, diols, carboxylic acids, ketones, ethers, O atoms, O radicals, O ions, and combinations thereof.
7. The ALD silicon and oxygen containing film formation process of claim 6 , wherein the oxygen-containing reactant is plasma O 2 .
8. The ALD silicon and oxygen containing film formation process of claim 6 , wherein the silicon and oxygen containing film is silicon oxide.
9. The ALD silicon and oxygen containing film formation process of claim 6 , further comprising introducing a nitrogen-containing reactant into the reactor.
10. The ALD silicon and oxygen containing film formation process of claim 9 , wherein the nitrogen-containing reactant is selected from the group consisting of ammonia, N 2 , N atoms, N radicals, N ions, saturated or unsaturated hydrazine, amines, diamines, ethanolamine, and combinations thereof.
11. The ALD silicon and oxygen containing film formation process of claim 9 , wherein the silicon and oxygen containing film is silicon oxynitride.
12. An ALD silicon oxide film formation process, the process comprising the steps of:
depositing a silicon oxide film on a substrate at a rate ranging from approximately 2.1 A/cycle to approximately 3.1 A/cycle by sequentially introducing a vapor of a mono-substituted TSA precursor and an oxygen-containing reactant into a reactor containing the substrate, the mono-substituted TSA precursor having a formula (SiH 3 ) 2 N—SiH 2 —X, wherein X is a halogen atom or an amino group [—NR 2] and each R is independently selected from the group consisting of H or a C 1 -C 6 hydrocarbyl group.
13. The ALD silicon oxide film formation process of claim 12 , wherein the oxygen-containing reactant is selected from the group consisting of O 2 , O 3 , H 2 O, H 2 O 2 , NO, NO 2 , N 2 O, alcohols, diols, carboxylic acids, ketones, ethers, O atoms, O radicals, O ions, and combinations thereof.
14. The ALD silicon oxide film formation process of claim 13 , wherein the oxygen-containing reactant is plasma O 2 .
15. The ALD silicon oxide film formation process of claim 12 , wherein X is Cl.
16. The ALD silicon oxide film formation process of claim 12 , wherein X is NiPr 2 .
17. The ALD silicon oxide film formation process of claim 12 , wherein X is NEt 2 .