Semiconductor devices and electronic systems having memory structures

1. A semiconductor device, comprising:

memory cells, at least one of the memory cells comprising:

a first electrode structure;

a select device structure over the first electrode structure;

a storage element structure over the select device structure; and

a second electrode structure over the storage element structure;

a first dielectric liner material overlying side surfaces of the memory cells;

a high-k dielectric material overlying side surfaces of the first dielectric liner material;

a second dielectric liner material overlying side surfaces of the high-k dielectric material; and

an additional dielectric material overlying side surfaces of the second dielectric liner material.

2. The semiconductor device of claim 1 , further comprising a third electrode structure between the select device structure and the storage element structure.

3. The semiconductor device of claim 1 , wherein the first dielectric liner material exhibits a thickness less than or equal to about 100 Å and comprises one or more of silicon nitride, silicon oxynitride, silicon carbonitride, and silicon carboxynitride.

4. The semiconductor device of claim 1 , wherein the high-k dielectric material exhibits a thickness less than or equal to about 25 Å and comprises one or more of aluminum oxide, hafnium oxide, nitrided hafnium oxide, hafnium silicate oxide, aluminum-doped hafnium oxide, aluminum silicate oxide, zirconium oxide, tantalum pentoxide, lanthanum oxide, titanium oxide, and yttrium oxide.

5. The semiconductor device of claim 1 , wherein the second dielectric liner material exhibits a thickness less than or equal to about 100 Å and comprises one or more of silicon nitride, silicon oxynitride, silicon carbonitride, and silicon carboxynitride.

6. The semiconductor device of claim 1 , wherein the second dielectric liner material comprises substantially the same material composition as the first dielectric liner material.

7. The semiconductor device of claim 1 , wherein the second dielectric liner material comprises substantially the same thickness as the first dielectric liner material.

8. The semiconductor device of claim 1 , wherein the second dielectric liner material exhibits a different thickness than the first dielectric liner material.

9. The semiconductor device of claim 1 , wherein:

the first dielectric liner material comprises silicon nitride;

the high-k dielectric material comprises aluminum oxide; and

the second dielectric liner material comprises silicon nitride.

10. The semiconductor device of claim 1 , further comprising a dielectric oxide material between the second dielectric liner material and the additional dielectric material.

11. The semiconductor device of claim 1 , wherein the additional dielectric material comprises one or more of a carbonated dielectric oxide material and a boronated dielectric oxide material.

12. The semiconductor device of claim 1 , comprising a memory die.

13. An electronic system, comprising:

a memory device in communication with at least one of an electronic signal processor device, an input device, and an output device, the memory device including a memory structure comprising:

memory cells, at least one of the memory cells comprising:

a first electrode structure;

a select device structure over the first electrode structure;

a storage element structure over the select device structure; and

a second electrode structure over the storage element structure;

a first dielectric nitride material on side surfaces of the memory cells;

a high-k dielectric material on side surfaces of the first dielectric nitride material;

a second dielectric nitride material on side surfaces of the high-k dielectric material; and

an additional dielectric material over side surfaces of the second dielectric nitride material.