Erase page check
Disclosed in some examples are methods, systems, memory devices, and machine readable mediums for performing an erase page check. For example, in response to an unexpected (e.g., an asynchronous) shutdown, the memory device may have one or more cells that did not finish programming. The memory device may detect these cells and erase them or mark them for erasure.
1. A method performed by a controller of a memory device, the method comprising:
determining that an asynchronous power loss occurred; and
responsive to determining that the asynchronous power loss occurred:
identifying a memory cell of the memory device to test for an incomplete programming operation, the memory cell configured as a multi-level cell;
shifting a read voltage of a first page of the memory cell of a predetermined magnitude toward a zero voltage, the first page having a lowest read voltage of a plurality of pages of the memory cell;
reading a value in the first page of the memory cell using the shifted read voltage;
determining that the memory cell was incompletely programmed based upon the value; and
in response to determining that the memory cell was incompletely programmed, mark the memory cell for erasure.
2. The method of claim 1 , wherein the first page is an extra page.
3. The method of claim 1 , wherein the first page is an upper page.
4. The method of claim 1 , wherein the asynchronous power loss is an unexpected power loss and wherein determining that the asynchronous power loss occurred comprises determining that a shut-down indication is not present on a power up.
5. The method of claim 1 , wherein reading the value in the first page is a user-mode read operation.
6. The method of claim 1 , wherein the first page is not a lower page.
7. The method of claim 1 , wherein identifying the memory cell of the memory device to test for the incomplete programming operation comprises finding a last fully written memory cell.
8. A memory device comprising:
a controller, configured to perform operations comprising:
determining that an asynchronous power loss occurred; and
responsive to determining that the asynchronous power loss occurred:
identifying a memory cell of the memory device to test for an incomplete programming operation, the memory cell configured as a multi-level cell;
shifting a read voltage of a first page of the memory cell of a predetermined magnitude toward a zero voltage, the first page having a lowest read voltage of a plurality of pages of the memory cell;
reading a value in the first page of the memory cell using the shifted read voltage;
determining that the memory cell was incompletely programmed based upon the value; and
in response to determining that the memory cell was incompletely programmed; mark the memory cell for erasure.
9. The memory device of claim 8 , wherein the first page is an extra page.
10. The memory device of claim 8 , wherein the first page is an upper page.
11. The memory device of claim 8 , wherein the asynchronous power loss is an unexpected power loss and wherein the operations of determining that the asynchronous power loss occurred comprises operations of determining that a shut-down indication is not present on a power up.
12. The memory device of claim 8 , wherein the operations of reading the value in the first page is a user-mode read operation.
13. The memory device of claim 8 , wherein the first page is not a lower page.
14. The memory device of claim 8 , wherein the operations of identifying the memory cell of the memory device to test for the incomplete programming operation comprises operations of finding a last fully written memory cell.
15. A non-transitory machine readable medium comprising instructions, that when executed by a machine, cause the machine to perform operations comprising:
determining that an asynchronous power loss occurred; and
responsive to determining that the asynchronous power loss occurred:
identifying a memory cell of a memory device to test for an incomplete programming operation, the memory cell configured as a multi-level cell;
shifting a read voltage of a first page of the memory cell of a predetermined magnitude toward a zero voltage, the first page having a lowest read voltage of a plurality of pages of the memory cell;
reading a value in the first page of the memory cell using the shifted read voltage;
determining that the memory cell was incompletely programmed based upon the value; and
in response to determining that the memory cell was incompletely programmed, mark the memory cell for erasure.
16. The non-transitory machine readable medium of claim 15 , wherein the first page is an extra page.
17. The non-transitory machine readable medium of claim 15 , wherein the first page is an upper page.
18. The non-transitory machine readable medium of claim 15 , wherein the asynchronous power loss is an unexpected power loss and wherein the operations of determining that the asynchronous power loss occurred comprises operations of determining that a shut-down indication is not present on a power up.
19. The non-transitory machine readable medium of claim 15 , wherein the operations of reading the value in the first page is a user-mode read operation.
20. The non-transitory machine readable medium of claim 15 , wherein the first page is not a lower page.
21. The non-transitory machine readable medium of claim 15 , wherein the operations of identifying the memory cell of the memory device to test for the incomplete programming operation comprises operations of finding a last fully written memo cell.