Semiconductor device with a protection mechanism and associated systems, devices, and methods

1. A semiconductor device, comprising:

a substrate including a substrate top surface;

interconnects connected to the substrate and extending above the substrate top surface;

a die attached over the substrate, wherein the die includes a die bottom surface that connects to the interconnects for electrically coupling the die and the substrate; and

a metal enclosure vertically extending between the substrate top surface and the die bottom surface, wherein the metal enclosure:

directly contacts the substrate top surface and the die bottom surface, continuously encircle the interconnects, and does not include solder.

2. The semiconductor device of claim 1 , wherein the metal enclosure isolates an enclosed space from exterior space, wherein the enclosed space includes the interconnects.

3. The semiconductor device of claim 2 , wherein the enclosed space does not include underfill.

4. The semiconductor device of claim 1 , wherein the metal enclosure includes solid copper resulting from a diffusion bonding process.

5. The semiconductor device of claim 4 , wherein the metal enclosure includes characteristics resulting from the diffusion bonding process.

6. The semiconductor device of claim 1 , wherein:

the metal enclosure is a first enclosure; and

further comprising:

a second enclosure directly contacting and vertically extending between the substrate top surface and the die bottom surface, wherein the first enclosure is between the interconnects and the second enclosure.

7. The semiconductor device of claim 6 , wherein the second enclosure peripherally surrounds the interconnects, the first enclosure, or a combination thereof.

8. The semiconductor device of claim 7 , wherein the first enclosure and the second enclosure have a non-nested arrangement or an overlapping arrangement.

9. The semiconductor device of claim 7 , wherein the first enclosure and the second enclosure are concentric.

10. The semiconductor device of claim 6 , wherein:

the first enclosure has a first shape along a horizontal plane; and

the second enclosure has a second shape along the horizontal plane that is different from the first shape.

11. The semiconductor device of claim 6 , wherein:

the first enclosure is electrically coupled to a first electrical connection; and

the second enclosure is electrically coupled to a second electrical connection different from the first electrical connection.

12. The semiconductor device of claim 11 , wherein the first electrical connection, the second electrical connection, or a combination thereof includes a ground or a power connection.

13. The semiconductor device of claim 12 , wherein:

the first electrical connection is the power connection; and

the second electrical connection is the ground connection, wherein the ground connection peripherally surrounds the power connection.

14. The semiconductor device of claim 1 , wherein:

the die includes a die periphery edge; and

the metal enclosure includes a periphery surface coincident with the die periphery edge along a vertical line.

15. The semiconductor device of claim 1 , wherein:

the semiconductor device is a three dimensional interconnect (3DI) device; and

the substrate is a second die.

16. The semiconductor device of claim 1 , wherein a separation between the die bottom surface and the substrate top surface along a vertical direction is less than 20 μm.

17. The semiconductor device of claim 1 , wherein the semiconductor device is a die-stack device that includes two or more dies.

18. A semiconductor device including a die stack having at least two dies, comprising:

a plurality of interconnects electrically coupling two adjacent dies of the die stack; and

a metal sealing member disposed between the two adjacent dies, wherein the metal sealing member continuously encircles the plurality of interconnects and does not include solder.