Thick tungsten hardmask films deposition on high compressive/tensile bow wafers
Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of thick hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber, forming a seed layer comprising boron on a film stack disposed on a substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.
1. A method of forming a hardmask layer on a substrate comprising:
applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber;
forming a seed layer comprising boron on a film stack disposed on the substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, wherein the seed layer gas mixture comprises at least a boron-based precursor gas and a nitrogen-based precursor gas;
forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber, wherein supplying the transition layer gas mixture comprises:
ramping down a gas flow rate of the boron-based precursor gas while maintaining a steady gas flow rate of the nitrogen-based precursor gas; and
supplying a tungsten-based precursor gas; and
forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.
2. The method of claim 1 , wherein the chucking voltage is between about 10 volts and about 3,000 volts.
3. The method of claim 2 , wherein the chucking voltage is between about 200 volts and about 1,000 volts.
4. The method of claim 3 , wherein the seed layer comprising boron is formed in the presence of a plasma.
5. The method of claim 4 , wherein the plasma is formed in-situ.
6. The method of claim 5 , wherein the plasma is formed using mixed frequency RF.
7. The method of claim 1 , wherein forming the seed layer is performed without a shadow ring encircling a perimeter of the substrate.
8. The method of claim 1 , wherein the film stack comprises repeating layers of a first dielectric layer and a second dielectric layer.
9. The method of claim 8 , wherein the first dielectric layer is a silicon oxide layer and the second dielectric layer is a silicon nitride layer.
10. The method of claim 1 , wherein a gas flow rate of the tungsten-based precursor gas is ramped up at a ramp up rate in the transition layer gas mixture while the gas flow rate of the boron-based precursor gas is ramped down.
11. The method of claim 10 , wherein the tungsten-based precursor gas is ramped up at a rate similar to the ramp down rate of the boron-based precursor gas.
12. The method of claim 11 , wherein forming the bulk hardmask layer further comprises:
steadily supplying the tungsten-based precursor gas and the nitrogen-based precursor gas in the processing chamber.
13. The method of claim 1 , wherein the boron-based precursor gas is B 2 H 6 and the nitrogen-based precursor gas is at least one of N 2 and NH 3 .
14. A method of forming a hardmask layer on a substrate comprising:
applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber;
forming a seed layer comprising boron on a film stack disposed on the substrate by:
supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, wherein the seed layer gas mixture comprises at least a boron-based precursor gas and a nitrogen-based precursor gas; and
steadily supplying the nitrogen-based precursor gas and varying a flow of the boron-based precursor gas in the processing chamber to form the seed layer;
forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber, wherein supplying the transition layer gas mixture comprises:
ramping down a gas flow rate of the boron-based precursor gas while maintaining a steady gas flow rate of the nitrogen-based precursor gas; and
supplying a tungsten-based precursor gas; and
forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.
15. The method of claim 14 , wherein forming the bulk hardmask layer further comprises:
steadily supplying the tungsten-based precursor gas and a carbon-based precursor gas in the processing chamber.
16. The method of claim 15 , wherein forming the seed layer further comprises supplying a hydrogen-based precursor gas into the processing chamber.
17. The method of claim 16 , wherein the film stack is used to form stair-like structures to form three dimension NAND memory devices.
18. The method of claim 14 , wherein the film stack comprises repeating layers of a silicon oxide layer and a silicon nitride layer.
19. A method of forming a hardmask layer on a substrate comprising:
applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber;
forming a boron nitride layer on a film stack disposed on the substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, wherein the seed layer gas mixture comprises at least a boron-based precursor gas and a nitrogen-based precursor gas;
forming a boron tungsten nitride layer on the boron nitride layer by supplying a transition layer gas mixture in the processing chamber, wherein supplying the transition layer gas mixture comprises:
ramping down a gas flow rate of the boron-based precursor gas while maintaining a steady gas flow rate of the nitrogen-based precursor gas; and
supplying a tungsten-based precursor gas; and
forming a tungsten nitride layer on the boron nitride layer by supplying a main deposition gas mixture in the processing chamber.
20. The method of claim 13 , wherein the tungsten-based precursor gas is WF 6 .