SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor manufacturing apparatus includes a reaction chamber configured to perform a process on a semiconductor substrate using a gas mixture comprising a first gas, and a first path configured to exhaust resultant gas that comprises the first gas from the reaction chamber. The semiconductor manufacturing apparatus further includes a first trap provided in the first path and configured to extract at least a portion of the first gas from the resultant gas, and a second path in which the trap is not provided and configured to exhaust the resultant gas from the reaction chamber.
1 . A semiconductor manufacturing apparatus comprising:
a reaction chamber configured to perform a process on a semiconductor substrate using a gas mixture comprising a first gas;
a first path configured to exhaust resultant gas that comprises the first gas from the reaction chamber;
a first trap provided in the first path and configured to extract at least a portion of the first gas from the resultant gas; and
a second path configured to exhaust the resultant gas from the reaction chamber.
2 . The semiconductor manufacturing apparatus according to claim 1 , wherein
the first trap includes a control mechanism configured to control a temperature of an interior of the first trap.
3 . The semiconductor manufacturing apparatus according to claim 2 , further comprising:
a third path configured to exhaust the resultant gas from the reaction chamber, wherein
the third path is provided with a second trap configured to extract at least a portion of the first gas from the resultant gas.
4 . The semiconductor manufacturing apparatus according to claim 2 , wherein the control mechanism of the first trap is configured to control the temperature of the interior of the first trap to be lower than about 2° C. or higher than about 18° C.
5 . The semiconductor manufacturing apparatus according to claim 1 , further comprising:
a third path configured to exhaust the resultant gas from the reaction chamber, wherein
the third path is provided with a second trap configured to extract at least a portion of the first gas from the resultant gas.
6 . The semiconductor manufacturing apparatus according to claim 1 , wherein the first trap is not provided in the second path.
7 . The semiconductor manufacturing apparatus according to claim 1 , wherein the reaction chamber is configured to perform a film forming process on the semiconductor substrate.
8 . The semiconductor manufacturing apparatus according to claim 1 , wherein the first gas is a tungsten hexafluoride gas.
9 . A semiconductor manufacturing apparatus comprising:
a first reaction chamber configured to perform a first process on a first semiconductor substrate using a gas mixture;
a first path configured to recover resultant gas from the process; and
a second reaction chamber connected to the first path and configured to perform a second process on a second semiconductor substrate using the resultant gas.
10 . A method of manufacturing a semiconductor device, comprising:
forming a first film on a semiconductor substrate using a first gas mixture;
discharging the first gas mixture after forming the first film;
forming a second film on the first film using a second gas mixture different from the first gas mixture and comprising a third gas;
extracting the third gas from the second gas mixture after forming the second film to generate a resultant second gas mixture; and
discharging the resultant second gas mixture.
11 . The method of manufacturing the semiconductor device according to claim 10 , wherein the discharged resultant second gas mixture excludes the third gas.
12 . The method of manufacturing the semiconductor device according to claim 10 , wherein
the third gas is extracted from the second gas mixture by a process that includes cooling of the second gas mixture.
13 . The method of manufacturing the semiconductor device according to claim 12 , wherein extracting the third gas from the second gas comprises solidifying the third gas by a cooling process.
14 . The method of manufacturing the semiconductor device according to claim 12 , wherein the cooling process is performed at a temperature lower than about 2° C.
15 . The method of manufacturing the semiconductor device according to claim 12 , further comprising heating the third gas after the cooling process.
16 . The method of manufacturing the semiconductor device according to claim 15 , wherein the heating process is performed at a temperature higher than about 18° C.
17 . The method of manufacturing the semiconductor device according to claim 10 , wherein the first gas mixture comprises a tungsten hexafluoride gas.