Dual-resonator semiconductor die
A microelectromechanical system (MEMS) resonator includes a substrate having a substantially planar surface and a resonant member having sidewalls disposed in a nominally perpendicular orientation with respect to the planar surface. Impurity dopant is introduced via the sidewalls of the resonant member such that a non-uniform dopant concentration profile is established along axis extending between the sidewalls parallel to the substrate surface and exhibits a relative minimum concentration in a middle region of the axis.
1. A semiconductor die comprising:
a first MEMS resonator having a first angular orientation with respect to a crystal plane of the semiconductor die; and
a second MEMS resonator having a second angular orientation with respect to the crystal plane of the semiconductor die and having an n-type dopant concentration greater than 10 19 /cm 3 , the second MEMS resonator having a frequency of mechanical resonance that is substantially less sensitive to change in temperature than a frequency of mechanical resonance of the first MEMS resonator due, at least in part, to a difference between the first and second angular orientations with respect to the crystal plane of the semiconductor die.
2. The semiconductor die of claim 1 wherein the second MEMS resonator comprises a frequency reference to enable detection of change in the frequency of mechanical resonance of the first MEMS resonator.
3. The semiconductor die of claim 1 wherein the second MEMS resonator comprises a temperature-stable frequency reference to enable detection of temperature-induced change in the frequency of mechanical resonance of the first MEMS resonator.
4. The semiconductor die of claim 1 wherein the first MEMS resonator has an n-type dopant concentration different than the dopant concentration of the second MEMS resonator.
5. The semiconductor die of claim 1 wherein first MEMS resonator is doped with a p-type dopant.
6. The semiconductor die of claim 1 wherein the n-type dopant concentration within the second MEMS resonator is characterized by a concentration gradient, and wherein the first MEMS resonator has an n-type dopant concentration characterized by a concentration gradient different than the concentration gradient of the second MEMS resonator.
7. The semiconductor die of claim 1 wherein the first MEMS resonator has a dopant concentration substantially equal to the dopant concentration of the first MEMS resonator.
8. The semiconductor die of claim 1 wherein the first MEMS resonator and the second MEMS resonator have different shapes.
9. The semiconductor die of claim 1 further comprising integrated circuitry.
10. The semiconductor die of claim 1 wherein the n-type dopant concentration of the second MEMS resonator is greater than 10 20 /cm 3 .
11. A method of fabricating a semiconductor die, the method comprising:
forming a first MEMS resonator having a first angular orientation with respect to a crystal plane of the semiconductor die; and
forming a second MEMS resonator having a second angular orientation with respect to the crystal plane of the semiconductor die and having an n-type dopant concentration greater than 10 19 /cm 3 , the second MEMS resonator having a frequency of mechanical resonance that is substantially less sensitive to change in temperature than a frequency of mechanical resonance of the first MEMS resonator due, at least in part, to a difference between the first and second angular orientations with respect to the crystal plane of the semiconductor die.
12. The method of claim 11 wherein the second MEMS resonator comprises a frequency reference to enable detection of change in the frequency of mechanical resonance of the first MEMS resonator.
13. The method of claim 11 wherein the second MEMS resonator comprises a temperature-stable frequency reference to enable detection of temperature-induced change in the frequency of mechanical resonance of the first MEMS resonator.
14. The method of claim 11 wherein forming the first MEMS resonator comprises doping the first MEMS resonator with an n-type dopant concentration different than the dopant concentration of the second MEMS resonator.
15. The method of claim 11 wherein forming the first MEMS resonator comprises doping the first MEMS resonator with a p-type dopant.
16. The method of claim 11 wherein the n-type dopant concentration within the second MEMS resonator is characterized by a concentration gradient, and wherein forming the first MEMS resonator comprises forming the first MEMS resonator with an n-type dopant concentration characterized by a concentration gradient different than the concentration gradient of the second MEMS resonator.
17. The method of claim 11 wherein forming the first MEMS resonator comprises forming the first MEMS resonator with a dopant concentration substantially equal to the dopant concentration of the first MEMS resonator.
18. The method of claim 11 wherein forming the first and second MEMS resonators comprises forming the first and second MEMS resonators with respective shapes different from one another.
19. The method of claim 1 further comprising forming integrated circuitry within the semiconductor die.
20. The method of claim 11 wherein forming a second MEMS resonator comprises forming the second MEMS resonator with an n-type dopant concentration greater than 10 20 /cm 3 .