Piezoelectric device and method of fabricating the same
Provided are a piezoelectric device and a method of fabricating the same and the piezoelectric device may include a substrate including a 3-dimensional pattern surface layer; and a piezoelectric material layer, which is formed on the pattern surface layer and forms a 3-dimensional interface with the pattern surface layer.
1. A piezoelectric energy harvesting device comprising:
a substrate including a 3-dimensional pattern surface layer; and
a piezoelectric material layer, which is formed on the 3-dimensional pattern surface layer and forms a 3-dimensional interface with the 3-dimensional pattern surface layer, the 3-dimensional interface being formed in a surface of the piezoelectric material layer facing to the substrate due to the 3-dimensional pattern surface layer.
2. The piezoelectric energy harvesting device of claim 1 , wherein the piezoelectric device has a cantilever-type structure.
3. The piezoelectric energy harvesting device of claim 1 , wherein the substrate comprises a solid polymer, silicon, ceramic, a metal, or a combination thereof.
4. The piezoelectric energy harvesting device of claim 1 , wherein the 3-dimensional pattern surface layer comprises an array of embossed shapes, dome shapes, dot shapes, trench shapes, hemisphere shapes, pyramid shapes, concavo-convex shapes, zigzag shapes, wave shapes, or mixed shapes thereof.
5. The piezoelectric energy harvesting device of claim 1 , wherein a ratio of a surface area A pat of the 3-dimensional pattern surface layer to a surface area A su b of a virtual plane of the substrate satisfies 1<A pat /A sub ≤ 10 , the virtual plane corresponding to a plane surface when assuming that the substrate has the plane surface instead of the 3-dimensional pattern surface layer.
6. The piezoelectric energy harvesting device of claim 1 , wherein the piezoelectric material layer comprises a piezoelectric ceramic containing lead zirconate titanate (PZT, Pb[Zr x Ti 1-x ]O 3 , 0<x<1), barium titanate (BTO, BaTiO 3 ), lead magnesium niobate-lead titanate (PMN-PT), lead zinc niobate-lead titanate (PZN-PT), BaNiTiO 3 (BNT), barium zirconate titanate-barium calcium titanate (BZT-BCT), lead magnesium niobate-lead zirconate titanate (PMN-PZT), ZnO, AIN, or a mixture thereof.
7. The piezoelectric energy harvesting device of claim 1 , wherein the piezoelectric material layer comprises a piezoelectric polymer containing polyvinylidene fluoride (PVDF), polyvinylenedifluoride-tetrafluoroethylene (PVDF-TrFE), P(VDF-TrFE-CFE), P(VDF-TrFE-CTFE), electron-irradiated P(VDF-TrFE), or a mixture thereof.
8. The piezoelectric energy harvesting device of claim 7 , wherein the piezoelectric material layer has a thickness from 0.1 μm to 10 μm.
9. The piezoelectric energy harvesting device of claim 1 , further comprising:
a first electrode layer between the pattern surface layer and the piezoelectric material layer; and
a second electrode layer, which is disposed on the piezoelectric material layer and faces the first electrode layer.
10. The piezoelectric energy harvesting device of claim 9 , further comprising a buffer layer between the pattern surface layer and the first electrode layer.
11. The piezoelectric energy harvesting device of claim 10 , wherein the buffer layer comprises Ti, W, Pt, Au, Mo, Ni, TiO 2 , Cr, or a mixture thereof.
12. The piezoelectric energy harvesting device of claim 1 , wherein the 3-dimensional pattern surface layer are integrated with the substrate, or the 3-dimensional pattern surface layer are arranged on the substrate.
13. The piezoelectric energy harvesting device of claim 10 , wherein the buffer layer prevents diffusion of materials of different layers between the substrate including the 3-dimensional pattern surface layer and the piezoelectric material layer.
14. The piezoelectric energy harvesting device of claim 1 , wherein the piezoelectric material layer has a thickness from 0.1 μm to 10 μm.
15. A piezoelectric energy harvesting device comprising:
a substrate including a 3-dimensional pattern surface layer;
a piezoelectric material layer, which is formed on the 3-dimensional pattern surface layer and forms a 3-dimensional interface with the 3-dimensional pattern surface layer, the 3-dimensional interface being formed in a surface of the piezoelectric material layer facing to the substrate due to the 3-dimensional pattern surface layer;
an electrode layer between the 3-dimensional pattern surface layer and the piezoelectric material layer; and
a buffer layer between the 3-dimensional pattern surface layer and the electrode layer.
16. The piezoelectric energy harvesting device of claim 15 , wherein the piezoelectric device has a cantilever-type structure.
17. The piezoelectric energy harvesting device of claim 15 , wherein a ratio of a surface area A pat of the 3-dimensional pattern surface layer to a surface area A sub of a virtual plane of the substrate satisfies 1<A pat /A sub ≤ 10 , the virtual plane corresponding to a plane surface when assuming that the substrate has the plane surface instead of the 3-dimensional pattern surface layer.
18. The piezoelectric energy harvesting device of claim 15 , wherein the piezoelectric material layer comprises a piezoelectric polymer containing polyvinylidene fluoride (PVDF), polyvinylenedifluoride-tetrafluoroethylene (PVDF-TrFE), P(VDF-TrFE-CFE), P(VDF-TrFE-CTFE), electron-irradiated P(VDF-TrFE), or a mixture thereof.
19. The piezoelectric energy harvesting device of claim 18 , wherein the piezoelectric material layer has a thickness from 0.1 μm to 10 μm.