Etching method and etching apparatus
A method for etching a titanium nitride film includes a first process of supplying reactive species, which include hydrogen and fluorine, to a base material including a titanium nitride film on at least a part of a surface, and a second process of vacuum-heating the base material to remove the surface reaction layer that is generated on the surface of the titanium nitride film in the first process.
1. An etching method for etching a titanium nitride film, comprising:
a first process of supplying reactive species, which include hydrogen and fluorine, to a base material that includes a titanium nitride film on at least a part of a surface; and
a second process of vacuum-heating the base material to remove a surface reaction layer that is formed on a surface of the titanium nitride film in the first process.
2. The etching method according to claim 1 ,
wherein a combination of the first process and the second process is set as one cycle, and a plurality of the cycles are repeated.
3. The etching method according to claim 1 ,
wherein the reactive species are generated by plasma of a processing gas that includes a material including hydrogen as a constituent element, and a material including fluorine as a constituent element.
4. An etching method, comprising:
repeating a cycle of a combination of a first process and a second process a plurality of times, the first process being configured to supply reactive species, which include hydrogen, oxygen, and fluorine, to a base material that includes a titanium nitride film on at least a part of a surface, and the second process being configured to vacuum-heat the base material to remove a surface reaction layer that is formed on a surface of the titanium nitride film in the first process.
5. The etching method according to claim 4 ,
wherein the reactive species are generated by plasma of a processing gas that includes a material including hydrogen as a constituent element, a material including oxygen as a constituent element, and a material including fluorine as a constituent element.
6. The etching method according to claim 1 ,
wherein the reactive species are generated by plasma of a processing gas that does not include a material including chlorine as a constituent element.
7. The etching method according to claim 1 ,
wherein the reactive species are generated by plasma of processing gas that does not include a material including nitrogen as a constituent element.
8. The etching method according to claim 1 ,
wherein the surface reaction layer mainly contains nitrogen that is bonded to hydrogen, and titanium that is bonded to fluorine.
9. The etching method according to claim 1 ,
wherein the surface reaction layer contains ammonium fluorotitanate as a main component.
10. The etching method according to claim 1 ,
wherein a temperature of the base material in vacuum heating is 100° C. or higher.
11. The etching method according to claim 1 ,
wherein a degree of vacuum of the base material in vacuum heating is 100 Pa or lower.
12. The etching method according to claim 1 ,
wherein a generation amount of the surface reaction layer has a saturation property with respect to processing time of the first process.