IP Library Granted Patent US 10,156,798
Granted Patent B2
US 10,156,798 · App. 15/701,977 · Granted Dec 18, 2018

Substrate processing apparatus

Inventor: Naofumi Ohashi (Toyama, JP)
Assignee: HITACHI KOKUSAI ELECTRIC INC.
G03F7/70866C23C16/34C23C16/452C23C16/4586C23C16/46G03F7/00G03F7/0002G03F7/20H01L21/027C23C16/50
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Quick Facts
Patent No.
US 10,156,798
App. No.
15/701,977
Granted
Dec 18, 2018
Kind
B2
Abstract

Described herein is a technique capable of suppressing a generation of particles. A substrate processing apparatus may include: a substrate support including: a protruding portion supporting a substrate including a pattern region at a center thereof and a non-contacting region at a periphery thereof; and a bottom portion defining a space along with the protruding portion; a process chamber wherein the substrate support is provided and the substrate is processed; a process gas supply unit configured to supply a process gas into the process chamber; and a hot gas supply unit configured to heat and supply an inert gas into the space.

Claims (19)

1. A substrate processing apparatus comprising:

a substrate support comprising:

a ring-shaped protruding portion supporting a substrate including a pattern region at a center thereof and a non-contacting region at a periphery thereof; and

a bottom portion defining a space along with the ring-shaped protruding portion;

a process chamber wherein the substrate support is provided and the substrate is processed;

a process gas supply unit configured to supply a process gas into the process chamber; and

a hot gas supply unit configured to heat and supply an inert gas into the space; and

at least one hole penetrating a side surface of the ring-shaped protruding portion.

2. The substrate processing apparatus of claim 1 , wherein the hot gas supply unit comprises: a supply pipe connected to the bottom portion; and a heating unit installed at the supply pipe and configured to heat the inert gas in the supply pipe.

3. The substrate processing apparatus of claim 2 , wherein the space is provided at least below a back surface of the pattern region and a back surface of the non-contacting region.

4. The substrate processing apparatus of claim 3 , further comprising a dispersion plate disposed between an upper end of the ring-shaped protruding portion and the bottom portion.

5. The substrate processing apparatus of claim 4 , wherein the dispersion plate is parallel to the substrate.

6. The substrate processing apparatus of claim 2 , further comprising a dispersion plate disposed between an upper end of the ring-shaped protruding portion and the bottom portion.

7. The substrate processing apparatus of claim 6 , wherein the dispersion plate is parallel to the substrate.

8. The substrate processing apparatus of claim 1 , wherein the space is provided at least below a back surface of the pattern region and a back surface of the non-contacting region.

9. The substrate processing apparatus of claim 8 , further comprising a dispersion plate disposed between an upper end of the ring-shaped protruding portion and the bottom portion.

10. The substrate processing apparatus of claim 9 , wherein the dispersion plate is parallel to the substrate.

11. The substrate processing apparatus of claim 8 , further comprising a dispersion plate disposed between an upper end of the ring-shaped protruding portion and the bottom portion.

12. The substrate processing apparatus of claim 11 , wherein the dispersion plate is parallel to the substrate.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 31, 2018
From: HITACHI KOKUSAI ELECTRIC INC.
To: KOKUSAI ELECTRIC CORPORATION
Reel/Frame 047995/0462 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 13, 2017
From: OHASHI, NAOFUMI
To: HITACHI KOKUSAI ELECTRIC INC.
Reel/Frame 043574/0375 →
Priority Claims (1)
JP 2016-241145 · Dec 13, 2016 · national
Continuity (1)
Related Publication 20180164702A1 · Jun 14, 2018