Sensing material for gas sensors, method of fabricating the sensing material, gas sensor including the sensing material and method of fabricating the gas sensor
View Patent ↗A sensing material for gas sensors including carbon nanotubes in which lanthanum fluoride (LaF 3 ) nanoparticles are fixed, a method of fabricating the sensing material, a gas sensor including the sensing material, and a method of fabricating the gas sensor are provided. The gas sensor having an excellent response and excellent selectivity to F 2 gas without any electrolytes may be provided using the sensing material. Also, the gas sensor can be useful in measuring a concentration of the F 2 gas and minimizing power consumption because the gas sensor may be operated at room temperature without using a heater, and can be used for portable purposes because it is possible to miniaturize the gas sensor.
1. An F 2 gas sensing material tar gas sensors comprising carbon nanotubes in which lanthanum fluoride (LaF 3 ) nanoparticles in a powder form are fixed by a microwave treatment without using any electrolyte,
wherein a weight ratio of the LaF 3 nanoparticles and the carbon nanotubes is in a range of 9:1 to 1:9.
2. The F 2 gas sensing material of claim 1 , wherein the carbon nanotubes comprise single-walled carbon nanotubes (SWCNTs).
3. The F 2 gas sensing material of claim 1 , wherein the LaF 3 nanoparticles are fixed to inner and/or outer walls of the carbon nanotubes.
4. A method of fabricating the F 2 gas sensing material defined in claim 1 , comprising:
(1) mixing LaF 3 nanoparticles in a powder form and carbon nanotubes; and
(2) subjecting the mixture obtained in step (1) to the microwave treatment to fabricate the carbon nanotubes for sensing F 2 gas in which the LaF 3 nanoparticles are fixed without using any electrolyte:
wherein a weight ratio of the LaF 3 nanoparticles and the carbon nanotubes is in a range of 9:1 to 1:9.
5. The method of claim 4 , further comprising:
immersing the carbon nanotubes in which the LaF 3 nanoparticles are fixed in step (2) in an organic solvent, followed by agitating, filtering and drying the carbon nanotubes.
6. The method of claim 5 , wherein the organic solvent comprises one or two or more selected from the group consisting of dichlorobenzene, ortho-dichlorobenzene, N-methyl-2-pyrrolidinone, hexamethylphosphoramide, monochlorobenzene, N,N-dimethylformamide, dichloroethane, isopropyl alcohol, ethanol, methanol, chloroform, and toluene.
7. A gas sensor comprising the F 2 gas sensing material defined in claim 1 .
8. A method of fabricating the gas sensor comprising the F 2 sensing material defined in claim 1 , comprising:
forming a network of the F 2 gas sensing material on a substrate; and
forming electrodes on the substrate on which the network is formed.
9. The method of claim 8 , wherein the substrate comprises a silicon substrate.
10. The method of claim 8 , wherein the substrate comprises a silicon substrate having a silicon oxide film formed on a surface thereof.
11. The method of claim 8 , wherein the forming of the network of the F 2 gas sensing material on the substrate is performed using one selected from a dipping method of dipping a substrate in a solution in which the F 2 gas sensing material is dispersed and removing the substrate from the solution or a spraying method of spraying a solution in which the F 2 gas sensing material is dispersed using an organic solvent.
12. The method of claim 11 , wherein the solution in which the F 2 gas sensing material is dispersed comprises one or two or more selected from the group consisting of dichlorobenzene, ortho-dichlorobenzene, N-methyl-2-pyrrolidinone, hexamethylphosphoramide, monochlorobenzene, N,N-dimethylformamide, dichloroethane, isopropyl alcohol, ethanol, methanol, chloroform, and toluene.
13. The method of claim 11 , further comprising:
irradiating the solution in which the F 2 gas sensing material is dispersed with ultrasonic waves.