Hybrid silicon lasers and amplifiers with 2D phosphorene film
Hybrid silicon lasers and amplifiers having resonator cavities within a silicon substrate and a two-dimensional material film on the substrate as an optical gain medium are described. The two-dimensional material film may be formed of one or more atomic layers of phosphorene (BP). The number of phosphorene layers may be adjusted to tune the emission wavelength of the hybrid devices.
1. A photonic device comprising:
a substrate formed of a semiconductor material, the substrate having a resonator cavity formed therein, the substrate having a mounting surface; and
a two dimensional material disposed on the mounting surface of the substrate and extending over the resonator cavity, the two dimensional material being formed of one or more atomic layers of phosphorene, wherein the two dimensional material is configured to provide a photonic gain region for photons propagating in the resonator cavity of the substrate, such that upon external pumping the two dimensional material produces a photon emission.
2. The photonic device of claim 1 , wherein the substrate is a Silicon substrate.
3. The photonic device of claim 2 , wherein the resonator cavity is a photonic crystal resonator formed in the Silicon substrate.
4. The photonic device of claim 2 , wherein the resonator cavity is a distributed Bragg reflector resonator formed in the Silicon substrate.
5. The photonic device of claim 2 , wherein the resonator cavity is a distributed feedback laser resonator formed in the Silicon substrate.
6. The photonic device of claim 1 , wherein the two dimensional material comprises at least 1 atomic layer of phosphorene (BP).
7. The photonic device of claim 6 , wherein the two dimensional material comprises 2-10 atomic layers of phosphorene (BP).
8. The photonic device of claim 6 , wherein the two dimensional material comprises 10-100 atomic layers of phosphorene (BP).
9. The photonic device of claim 6 , wherein the two dimensional material comprises 10-500 atomic layers of phosphorene (BP).
10. The photonic device of claim 1 , further comprising an optical pump laser configured to provide photonic pumping of the two dimensional material, the photonic pumping being at a different wavelength than a wavelength of the photon emission.
11. The photonic device of claim 1 , further comprising a first electrode and a second electrode both positioned to provide a pump current, from an external current source, to the photonic device.
12. The photonic device of claim 1 , wherein the two dimensional material comprises different atomic layers of phosphorene at different locations on the two dimensional material.
13. A hybrid amplifier comprising:
a semiconductor substrate having a resonator cavity;
a two dimensional material disposed on a mounting surface of the semiconductor substrate and extending over the resonator cavity, the two dimensional material being formed of one or more atomic layers of phosphorene, wherein the two dimensional material is configured to provide a photonic gain region for photons propagating in the resonator cavity of the substrate; and
an electrode configuration having at least one electrode disposed at the two dimensional material to pump current into the two dimensional material for conversion into photons for propagation in the resonator cavity, the two dimensional material to produce a photon emission of the hybrid amplifier in response to an external current source supplying the pump current to the electrode configuration.
14. The hybrid amplifier of claim 13 , wherein the electrode configuration comprises at least additional electrode for connecting to the external current source.
15. The hybrid amplifier of claim 13 , further comprising a contact spacer disposed between the resonator cavity and the two dimensional material.