Power amplifier module
A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.
1. A power amplifier module comprising:
a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal;
a second current source that outputs a second current corresponding to the level control voltage;
a first transistor, wherein an input signal and a first bias current are supplied to a base of the first transistor and an emitter of the first transistor is grounded;
a second transistor, wherein an emitter of the second transistor is connected to a collector of the first transistor, the second current is supplied to a base of the second transistor, and a first amplified signal obtained by amplifying the input signal is output from a collector of the second transistor; and
a third transistor, wherein the first current is supplied to a collector of the third transistor, a bias control current or voltage is supplied to a base of the third transistor, and the first bias current is supplied from an emitter of the third transistor to the base of the first transistor.
2. The power amplifier module according to claim 1 , wherein the first current is greater than the second current.
3. The power amplifier module according to claim 1 , further comprising:
a fourth transistor, wherein a power supply voltage is supplied to a collector of the fourth transistor, the first amplified signal and a second bias current are supplied to a base of the fourth transistor, an emitter of the fourth transistor is grounded, and a second amplified signal obtained by amplifying the first amplified signal is output from the collector of the fourth transistor; and
a fifth transistor, wherein the first current is supplied to a collector of the fifth transistor, the bias control current or voltage is supplied to a base of the fifth collector, and the second bias current is supplied from an emitter of the fifth collector to the base of the fourth transistor.
4. The power amplifier module according to claim 2 , further comprising:
a fourth transistor, wherein a power supply voltage is supplied to a collector of the fourth transistor, the first amplified signal and a second bias current are supplied to a base of the fourth transistor, an emitter of the fourth transistor is grounded, and a second amplified signal obtained by amplifying the first amplified signal is output from the collector of the fourth transistor; and
a fifth transistor, wherein the first current is supplied to a collector of the fifth transistor, the bias control current or voltage is supplied to a base of the fifth collector, and the second bias current is supplied from an emitter of the fifth collector to the base of the fourth transistor.
5. A power amplifier module comprising:
a first voltage source that outputs a first voltage corresponding to a level control voltage for controlling a signal level of an amplified signal;
a second voltage source that outputs a second voltage corresponding to the level control voltage;
a first transistor, wherein an input signal and a first bias current are supplied to a base of the first transistor and an emitter of the first transistor is grounded;
a second transistor, wherein an emitter of the second transistor is connected to the collector of the first transistor, the second voltage is supplied to a base of the second transistor, and a first amplified signal obtained by amplifying the input signal is output from a collector of the second transistor; and
a third transistor, wherein the first voltage is supplied to a collector of the third transistor, a bias control current or voltage is supplied to a base of the third transistor, and the first bias current is supplied from an emitter of the third transistor to the base of the first transistor.
6. The power amplifier module according to claim 5 , wherein the first voltage is greater than the second voltage.
7. The power amplifier module according to claim 5 further comprising:
a fourth transistor, wherein a power supply voltage is supplied to a collector of the fourth transistor, the first amplified signal and a second bias current are supplied to a base of the fourth transistor, an emitter of the fourth transistor is grounded, and a second amplified signal obtained by amplifying the first amplified signal is output from the collector of the fourth transistor; and
a fifth transistor, wherein the first voltage is supplied to a collector of the fifth transistor, the bias control current or voltage is supplied to a base of the fifth transistor, and the second bias current is supplied from an emitter of the fifth transistor to the base of the fourth transistor.
8. The power amplifier module according to claim 6 further comprising:
a fourth transistor, wherein a power supply voltage is supplied to a collector of the fourth transistor, the first amplified signal and a second bias current are supplied to a base of the fourth transistor, an emitter of the fourth transistor is grounded, and a second amplified signal obtained by amplifying the first amplified signal is output from the collector of the fourth transistor; and
a fifth transistor, wherein the first voltage is supplied to a collector of the fifth transistor, the bias control current or voltage is supplied to a base of the fifth transistor, and the second bias current is supplied from an emitter of the fifth transistor to the base of the fourth transistor.
9. The power amplifier module according to claim 1 , further comprising a negative feedback circuit disposed between the collector of the second transistor and the base of the first transistor.
10. The power amplifier module according to claim 2 , further comprising a negative feedback circuit disposed between the collector of the second transistor and the base of the first transistor.
11. The power amplifier module according to claim 3 , further comprising a negative feedback circuit disposed between the collector of the second transistor and the base of the first transistor.
12. The power amplifier module according to claim 4 , further comprising a negative feedback circuit disposed between the collector of the second transistor and the base of the first transistor.
13. The power amplifier module according to claim 5 , further comprising a negative feedback circuit disposed between the collector of the second transistor and the base of the first transistor.
14. The power amplifier module according to claim 9 , wherein the negative feedback circuit comprises a first resistor and a capacitor, the first resistor and the capacitor being connected in series.
15. The power amplifier module according to claim 10 , wherein the negative feedback circuit comprises a first resistor and a capacitor, the first resistor and the capacitor being connected in series.
16. The power amplifier module according to claim 11 , wherein the negative feedback circuit comprises a first resistor and a capacitor, the first resistor and the capacitor being connected in series.
17. The power amplifier module according to claim 12 , wherein the negative feedback circuit comprises a first resistor and a capacitor, the first resistor and the capacitor being connected in series.
18. The power amplifier module according to claim 13 , wherein the negative feedback circuit comprises a first resistor and a capacitor, the first resistor and the capacitor being connected in series.
19. The power amplifier module according to claim 1 , further comprising a second resistor connected between the collector of the third transistor and ground.
20. The power amplifier module according to claim 2 , further comprising a second resistor connected between the collector of the third transistor and ground.
21. The power amplifier module according to claim 3 , further comprising a second resistor connected between the collector of the third transistor and ground.
22. The power amplifier module according to claim 4 , further comprising a second resistor connected between the collector of the third transistor and ground.
23. The power amplifier module according to claim 5 , further comprising a second resistor connected between the collector of the third transistor and ground.