Aluminum nitride-based semiconductor deep ultraviolet light-emitting device
A vertically structured, aluminum nitride-based semiconductor deep ultraviolet light-emitting device is provided that exhibits a high light emission efficiency and an improved yield. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device includes: a conductive support substrate; a porous metal film having a conductive macroporous structure with a pore rate of from 10% to 50% inclusive; and an aluminum nitride-based semiconductor layer structural body with a light-emitting layer, the conductive support substrate and the aluminum nitride-based semiconductor layer structural body being bonded with the porous metal film interposed therebetween for electrical connection, wherein the aluminum nitride-based semiconductor deep ultraviolet light-emitting device has an emission peak wavelength of from 220 nm to 300 nm inclusive.
1. An aluminum nitride-based semiconductor deep ultraviolet light-emitting device having a vertical structure, comprising:
a conductive support substrate;
a porous metal film having a conductive macroporous structure with a pore rate of 10% to 50% inclusive;
an aluminum nitride-based semiconductor layer structural body with a light-emitting layer; and
a second-conductive-side contact electrode,
the aluminum nitride-based semiconductor layer structural body including a first-conductive-type contact layer, a first-conductive-type layer, the light-emitting layer, a second-conductive-type layer, and a second-conductive-type contact layer in this sequence,
the conductive support substrate and the second-conductive-type contact layer of the aluminum nitride-based semiconductor layer structural body being bonded to each other with the porous metal film and the second-conductive-side contact electrode interposed therebetween for electrical connection, wherein:
the aluminum nitride-based semiconductor deep ultraviolet light-emitting device has a structure that restricts a second-conductive-side current path;
the structure is one of a stripe electrode structure and a ridge stripe structure;
in the stripe electrode structure, the second-conductive-side contact electrode is formed only on a part of the second-conductive-type contact layer and an insulating layer is formed on a part where no second-conductive-side contact electrode is formed;
in the ridge stripe structure, an insulating layer is formed to replace a part of the second-conductive-type contact layer; and
the aluminum nitride-based semiconductor deep ultraviolet light-emitting device has an emission peak wavelength of 220 nm to 300 nm inclusive.
2. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device according to claim 1 , wherein
the first-conductive-type layer and the second-conductive-type layer each have a multilayer structure of layers of different Al composition.
3. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device according to claim 1 , wherein:
the first-conductive-type contact layer is a first-conductive-type Al x Ga l-x N contact layer where 0<x≤1; and
the second-conductive-type contact layer is a second-conductive-type Al y Ga l-y N contact layer where 0.25≤y≤1.
4. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device according to claim 1 , wherein the porous metal film is a metal film containing silver.
5. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device according to claim 1 , wherein the conductive support substrate is a silicon substrate.