Integrated circuit packages
Substrateless integrated circuit (IC) packages having a die with direct diagonal connections, as well as related structures, devices, and methods, are disclosed herein. For example, in some embodiments, an IC package may include: a die having a face with a plurality of contacts thereon, a dielectric layer in contact with the face, and a conductive pathway extending diagonally through the dielectric layer and coupling to an individual contact of the plurality of contacts on the die. In some embodiments, a conductive pathway may fan out to translate the contacts from a more dense layout to a less dense layout. In some embodiments, a conductive pathway may fan in to translate the contacts from a less dense layout to a more dense layout. In some embodiments, the dielectric layer and the conductive pathway may extend beyond the footprint of the die on one or more edges.
1. An integrated circuit (IC) package, comprising:
a die having a plurality of contacts on a face, wherein the die has a total footprint area defined by a product of an outer edge to outer edge width and an outer edge to outer edge length of the face of the die;
a dielectric material in direct contact with the face of the die, wherein the dielectric material is in contact with the plurality of contacts, wherein the dielectric material has a total footprint area defined by a product of an outer edge to outer edge width and an outer edge to outer edge length of the dielectric material, and wherein the total footprint area of the dielectric material is greater than the total footprint area of the die; and
a conductive pathway extending through the dielectric material having a first end and a second end, wherein the first end is electrically coupled to an individual contact of the plurality of contacts, and wherein the second end is at a top surface of the dielectric material and is positioned beyond the total footprint area of the die.
2. The IC package of claim 1 , wherein the conductive pathway extends diagonally through the dielectric material.
3. The IC package of claim 1 , wherein the dielectric material comprises one or more of a polymer compound, a poly-resin mold compound, an elastomer mold compound, and silicon.
4. The IC package of claim 1 , wherein a maximum thickness of the dielectric material is less than or equal to 1.5 millimeters.
5. The IC package of claim 1 , wherein the conductive pathway comprises one or more of copper, solder, tin, nickel, aluminum, titanium, stainless steel, beryllium, molybdenum, tungsten, silicon carbide, and tungsten carbide.
6. The IC package of claim 1 , wherein a length of the conductive pathway is between 0.5 millimeters and 500 millimeters.
7. The IC package of claim 1 , wherein a thickness of the conductive pathway is between 30 microns and 300 microns.
8. The IC package of claim 1 , further comprising a metal seed layer on the plurality of contacts.
9. The IC package of claim 1 , further comprising solder on the second end of the conductive pathway.
10. The IC package of claim 1 , further comprising:
a second conductive pathway extending through the dielectric material having a third end and a fourth end, wherein the third end is electrically coupled to a second individual contact of the plurality of contacts, and wherein the fourth end is at the top surface of the dielectric material; and
a third conductive pathway extending through the dielectric material having a fifth end and a sixth end, wherein the fifth end is electrically coupled to a third individual contact of the plurality of contacts, and wherein the sixth end is electrically coupled to the fourth end at the top surface of the dielectric material.
11. The IC package of claim 1 , further comprising:
a circuit board, wherein the die is electrically coupled to the circuit board via the conductive pathway.
12. An integrated circuit (IC) structure, comprising:
a die having a plurality of first contacts on a face, wherein the die has a total footprint area defined by a product of an outer edge to outer edge width and an outer edge to outer edge length of the face of the die;
a dielectric layer in direct contact with the face of the die, wherein the dielectric layer has a total footprint area defined by a product of an outer edge to outer edge width and an outer edge to outer edge length of the dielectric layer, and wherein the total footprint area of the dielectric layer is greater than the total footprint area of the die; and
a first conductive pathway connecting to a first individual contact of the plurality of first contacts and extending diagonally relative to the face of the die through the dielectric layer.
13. The IC structure of claim 12 , wherein the first conductive pathway extends to a top surface of the dielectric layer.
14. The IC structure of claim 13 , further comprising:
a second conductive pathway connecting to a second individual contact of the plurality of first contacts and extending diagonally through the dielectric layer to electrically couple with the first conductive pathway at the top surface of the dielectric layer.
15. The IC structure of claim 12 , wherein the dielectric layer comprises one or more of a polymer compound, a poly-resin mold compound, an elastomer mold compound, and silicon.
16. The IC structure of claim 12 , wherein the first conductive pathway comprises one or more of copper, solder, tin, nickel, aluminum, titanium, stainless steel, beryllium, molybdenum, tungsten, silicon carbide, and tungsten carbide.
17. The IC structure of claim 12 , wherein the first conductive pathway extends beyond the total footprint area of the die.
18. The IC structure of claim 12 , further comprising:
a plurality of second contacts at the top surface of the dielectric layer, wherein the plurality of second contacts are arranged to be less dense as compared to the plurality of first contacts.
19. The IC structure of claim 12 , further comprising:
a plurality of second contacts at the top surface of the dielectric layer, wherein the plurality of second contacts are arranged to be more dense as compared to the plurality of first contacts.
20. A method of manufacturing an integrated circuit (IC) structure, comprising:
forming a dielectric layer directly on a face of a die, wherein the face of the die includes a plurality of contacts, wherein the die has a total footprint area defined by a product of an outer edge to outer edge width and an outer edge to outer edge length of the face of the die, wherein the dielectric layer has a total footprint area defined by a product of an outer edge to outer edge width and an outer edge to outer edge length of the dielectric layer, and wherein the total footprint area of the dielectric layer is greater than the total footprint area of the die;
forming one or more tunnels through the dielectric layer extending diagonally, relative to the face of the die, from a top surface of the dielectric layer to an individual contact of the plurality of contacts; and
filling the one or more tunnels with conductive material to form one or more conductive pathways.
21. The method of claim 20 , further comprising:
removing dielectric material from the one or more tunnels before filling with conductive material.
22. The method of claim 20 , further comprising:
electrically coupling the die to a circuit board via the one or more conductive pathways.
23. A computing device, comprising:
an integrated circuit (IC) assembly, comprising:
a die having a plurality of contacts on a face, wherein the die has a total footprint area defined by a product of an outer edge to outer edge width and an outer edge to outer edge length of the face of the die;
a dielectric material in direct contact with the face of the die, wherein the dielectric material is in contact with the plurality of contacts, wherein the dielectric material has a total footprint area defined by a product of an outer edge to outer edge width and an outer edge to outer edge length of the dielectric material, and wherein the total footprint area of the dielectric material is greater than the total footprint area of the die; and
a conductive pathway extending through the dielectric material having a first end and a second end, wherein the first end is electrically coupled to an individual contact of the plurality of contacts, and wherein the second end is at a top surface of the dielectric material and is positioned beyond the total footprint area of the die; and
a circuit board, wherein the circuit board is electrically coupled to the die via the conductive pathway.
24. The computing device of claim 23 , wherein the conductive pathway extends diagonally through the dielectric material.
25. The computing device of claim 23 , further comprising:
a second conductive pathway extending through the dielectric material having a third end and a fourth end, wherein the third end is electrically coupled to a second individual contact of the plurality of contacts, and wherein the fourth end is at the top surface of the dielectric material; and
a third conductive pathway extending through the dielectric material having a fifth end and a sixth end, wherein the fifth end is electrically coupled to a third individual contact of the plurality of contacts, and wherein the sixth end is electrically coupled to the fourth end at the top surface of the dielectric material.