Conductive paste composition and semiconductor devices made therewith
View Patent ↗The present invention provides a thick-film paste composition for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal and an oxide composition dispersed in an organic medium that includes an organopolysiloxane and a fluorine-containing degradation agent.
1. A paste composition, comprising:
an inorganic solids portion that comprises:
(a) a source of electrically conductive metal, and
(b) an inorganic oxide-based component having a softening point in the range of 250 to 800° C. and present in an amount that comprises 0.25 to 12 wt % of the total weight of the paste composition, and
a vehicle in which the constituents of the inorganic solids portion are dispersed, the vehicle comprising:
(c) an organopolysiloxane in an amount ranging from 0.05% to 2% by weight of the paste composition;
(d) a fluorine-containing degradation agent comprising tetrabutylammonium fluoride; and
(e) a solvent.
2. The paste composition of claim 1 , wherein the organopolysiloxane comprises a polymer having a structure represented by Formula (II),
in which each of the R 1 , R 2 , and R 3 groups is independently selected from C1-C8 alkyl, C2-C8 alkenyl, C2-C8 alkynyl, or C6-C10 aryl groups, with any of the R 1 , R 2 , and R 3 groups optionally comprising one or more substituents selected from alkoxy, hydroxy, carbonyl, carboxyl, amino, epoxy, methacrylic, glycidoxy, ureido, sulfide, methacryloxy, sulfhydryl, and halogen groups; and n is an integer ranging from 50 to 100,000.
3. The paste composition of claim 2 , wherein the organopolysiloxane comprises polydimethylsiloxane.
4. The paste composition of claim 1 , wherein the organopolysiloxane comprises a co-polymer having a structure represented by Formula (III),
in which each of the R 1 , R 2 , R 3 , and R 4 groups is independently selected from C1-C8 alkyl, C2-C8 alkenyl, C2-C8 alkynyl, or C6-C10 aryl groups, with any of the R 1 , R 2 , R 3 , and R 4 groups optionally comprising one or more substituents selected from alkoxy, hydroxy, carbonyl, carboxyl, amino, epoxy, methacrylic, glycidoxy, ureido, sulfide, methacryloxy, sulfhydryl, and halogen groups; and m and n are integers, each of which may range independently from 50 to 100,000, and with the proviso that the R 1 and R 4 groups are different.
5. The paste composition of claim 1 , wherein the organopolysiloxane has a number average molecular weight M n ranging from 5 to 1,000 kDa.
6. The paste composition of claim 1 , wherein the amount of organopolysiloxane ranges from a lower limit of 0.1% to an upper limit of 2% by weight of the paste composition.
7. The paste composition of claim 1 , wherein a ratio of the number of F atoms present in the degradation agent to the number of Si atoms present in the organopolysiloxane ranges from a lower limit of 0.0002 to an upper limit of 0.2.
8. The paste composition of claim 1 , wherein the electrically conductive metal comprises silver.
9. The paste composition of claim 1 , wherein the source of electrically conductive metal comprises 85 to 99.75% by weight of the solids.
10. The A paste composition, comprising:
an inorganic solids portion that comprises:
(a) a source of electrically conductive metal, and
(b) an inorganic oxide-based component having a softening point in the range of 250 to 800° C. and present in an amount that comprises 0.25 to 12 wt % of the total weight of the paste composition, and
a vehicle in which the constituents of the inorganic solids portion are dispersed, the vehicle comprising:
(c) an organopolysiloxane in an amount ranging from 0.05% to 2% by weight of the paste composition;
(d) a fluorine-containing degradation agent comprising a substance having the formula [M k+ ][X − ] k , wherein M k+ is a cation with positive charge k and X − is F − or (HF 2 ) − ; and
(e) a solvent,
and wherein the inorganic oxide-based component comprises a lead tellurium oxide glass frit that optionally comprises at least one of 0.25 to 5 wt. % B 2 O 3 or 0.1 to 5 wt. % Li 2 O.
11. A process comprising:
(a) providing a semiconductor substrate having opposing first and second major surfaces and comprising an insulating layer situated on the first major surface of the semiconductor substrate;
(b) applying a paste composition as recited by claim 1 onto at least a portion of the first major surface, and
(c) firing the semiconductor substrate and the paste composition under conditions sufficient for the paste composition to penetrate the insulating layer and form an electrode in electrical contact with the semiconductor substrate.
12. A photovoltaic cell precursor, comprising:
(a) a semiconductor substrate having opposing first and second major surfaces; and
(b) a paste composition as recited by claim 1 , the paste composition being applied onto a portion of the first surface and configured to be formed by a firing operation into an electrically conductive structure comprising an electrode in electrical contact with the substrate.
13. The paste composition of claim 1 , wherein the inorganic oxide-based component comprises a lead tellurium oxide glass frit that optionally comprises at least one of 0.25 to 5 wt. % B 2 O 3 or 0.1 to 5 wt. % Li 2 O.