IP Library Granted Patent US 10,236,160
Granted Patent B2
US 10,236,160 · App. 15/717,107 · Granted Mar 19, 2019

Electron beam apparatus and positional displacement correcting method of electron beam

Inventor: Noriaki Nakayamada (Kamakura, JP)
Assignee: NuFlare Technology, Inc.
H01J37/3023H01J37/06H01J37/1472H01J37/3026H01J37/3175H01J2237/004H01J2237/30472H01J2237/31774H01J2237/31776
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,236,160
App. No.
15/717,107
Granted
Mar 19, 2019
Kind
B2
Abstract

According to one aspect of the present invention, an electron beam apparatus includes charge amount distribution operation processing circuitry that operates a charge amount distribution of an irradiation region in a case that a substrate is irradiated with an electron beam using a combined function combining a first exponential function having an inflection point and at least one of a first-order proportional function and a second exponential function that converges and depending on a pattern area density; positional displacement operation processing circuitry that operates a positional displacement of an irradiation pattern formed due to irradiation of the electron beam using the charge amount distribution obtained; correction processing circuitry that corrects an irradiation position using the positional displacement; and an electron beam column including an emission source that emits the electron beam and a deflector that deflects the electron beam to irradiate a corrected irradiation position with the electron beam.

Claims (32)

1. An electron beam apparatus comprising:

charge amount distribution operation processing circuitry that operates to calculate a charge amount distribution of an irradiation region in a case that a substrate is irradiated with an electron beam using a combined function combining a first exponential function having an inflection point and at least one of a first-order proportional function and a second exponential function that converges and depending on a pattern area density;

positional displacement operation processing circuitry that operates to calculate a positional displacement of an irradiation pattern formed due to irradiation of the electron beam using the charge amount distribution obtained;

correction processing circuitry that corrects an irradiation position using the positional displacement; and

an electron beam column including an emission source that emits the electron beam and a deflector that deflects the electron beam to irradiate a corrected irradiation position with the electron beam,

wherein the inflection point is a local maximum point or a local minimum point, and coefficients of the combined function are set such that the local maximum point has a positive charge amount or the local minimum point has a negative charge amount.

2. An electron beam apparatus comprising:

charge amount distribution operation processing circuitry that operates to calculate a charge amount distribution of an irradiation region in a case that a substrate is irradiated with an electron beam using a combined function combining a first exponential function having a local maximum point or a local minimum point and at least one of a first-order proportional function and a second exponential function that converges at infinity and having at least a pattern area density as a variable;

positional displacement operation processing circuitry that operates to calculate a positional displacement of an irradiation pattern formed due to irradiation of the electron beam using the charge amount distribution obtained;

correction processing circuitry that corrects an irradiation position using the positional displacement; and

an electron beam column including an emission source that emits the electron beam and a deflector that deflects the electron beam to irradiate a corrected irradiation position with the electron beam,

wherein coefficients of the combined function are set such that the local maximum point has a positive charge amount or the local minimum point has a negative charge amount.

3. The apparatus according to claim 2 , wherein in a case that the combined function uses the second exponential function, coefficients of the combined function are set such that a charge amount converges to a negative charge amount in a maximum pattern area density.

4. The apparatus according to claim 2 , wherein coefficients of the combined function are set such that the local maximum point is positioned within a range in which the pattern area density is 3 to 7%.

5. A positional displacement correcting method of an electron beam comprising:

operating to calculate a charge amount distribution of an irradiation region in a case that a substrate is irradiated with an electron beam using a combined function combining a first exponential function having a local maximum point or a local minimum point and at least one of a first-order proportional function and a second exponential function that converges at infinity and having at least a pattern area density as a variable;

operating to calculate a positional displacement of an irradiation pattern formed due to irradiation of the electron beam using the charge amount distribution obtained;

correcting an irradiation position using the positional displacement; and

irradiating a corrected irradiation position with the electron beam,

wherein coefficients of the combined function are set such that the local maximum point has a positive charge amount or the local minimum point has a negative charge amount.

6. An electron beam apparatus comprising:

an exposure intensity operator that operates to calculate an exposure intensity distribution in a case that a substrate is irradiated with an electron beam;

positional displacement operation processing circuitry that operates to calculate a positional displacement of an irradiation pattern based on the exposure intensity distribution using a neural network model using, as an input/output conversion function, a combined function combining a first exponential function having a local maximum point or a local minimum point and at least one of a first-order proportional function and a second exponential function that converges at infinity and having at least a pattern area density as a variable;

correction processing circuitry that corrects an irradiation position using the positional displacement; and

an electron beam column including an emission source that emits the electron beam and a deflector that deflects the electron beam to irradiate a corrected irradiation position with the electron beam.

7. The apparatus according to claim 6 , wherein in a case that the combined function uses the second exponential function and the first exponential function has a positive local maximum point, coefficients of the combined function are set such that the second exponential function converges to a negative value.

8. The apparatus according to claim 6 , wherein in a case that the combined function uses the second exponential function and the first exponential function has a negative local minimum point, coefficients of the combined function are set such that the second exponential function converges to a negative value.

9. A positional displacement correcting method of an electron beam comprising:

operating to calculate an exposure intensity distribution in a case that a substrate is irradiated with an electron beam;

operating to calculate a positional displacement of an irradiation pattern based on the exposure intensity distribution using a neural network model using, as an input/output conversion function, a combined function combining a first exponential function having a local maximum point or a local minimum point and at least one of a first-order proportional function and a second exponential function that converges at infinity and having at least a pattern area density as a variable;

correcting an irradiation position using the positional displacement; and

irradiating a corrected irradiation position with the electron beam.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 12, 2017
From: NAKAYAMADA, NORIAKI
To: NUFLARE TECHNOLOGY, INC.
Reel/Frame 044369/0860 →
Priority Claims (2)
JP 2016-190259 · Sep 28, 2016 · national
JP 2017-026944 · Feb 16, 2017 · national
Continuity (1)
Related Publication 20180090298A1 · Mar 29, 2018
Cited By (1)
US 12,640,341