IP Library › Granted Patent US 10,446,533
Granted Patent B2
US 10,446,533 · App. 15/721,057 · Granted Oct 15, 2019

Package on package with integrated passive electronics method and apparatus

Inventor: Hyoung Il Kim (Folsom, CA)
Assignee: Intel Corporation
H01L25/50H01L21/486H01L21/56H01L23/49811H01L23/5384H01L25/18H01L2224/16225H01L2224/48091H01L2924/181H01L2924/1815
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Quick Facts
Patent No.
US 10,446,533
App. No.
15/721,057
Granted
Oct 15, 2019
Kind
B2
Abstract

The present application relates to devices and techniques for a package on package multi-package integrated circuit. A component of the integrated circuit maybe located in a void formed in a circuit package of the multi-package integrated circuit. The void may be formed by fabricating a void structure with an internal void corresponding to the component. The void structure may be bonded to a first substrate of a first package in the multi-package integrated circuit. The first substrate and void structure may be encased in a mold compound. A sacrificial layer may be removed, exposing the void in the void structure. The component may be, for example, a through mold via. The first package may be coupled to a second package. Multi-package integrated circuit assemblies fabricated pursuant to the disclosure herein may comprise a higher density of electronic components, including passive electronic components.

Claims (12)

1. A method of fabricating a multi-package integrated circuit comprising:

forming a bottom circuit package, including providing a bottom circuit package substrate, placing a first integrated circuit on the substrate; disposing a mold compound layer on the substrate to encapsulate the first integrated circuit; and disposing first and second void structures in the mold compound layer, wherein the first and second void structures have first and second heights, wherein the first height is greater than the second height, wherein forming the bottom circuit package further includes disposing a conductor via through the mold compound layer, including forming the conductor via with vertical sidewalls in the mold compound, and filling the conductor via with a conductive material;

forming a top circuit package, including providing a top circuit package substrate; disposing a second integrated circuit in a die side layer of the top circuit package substrate; and disposing first and second passive electrical components on an interface side of the top package substrate to match the disposition of the first and second void structures of the bottom package substrate, wherein the first and second passive electrical components have first and second component heights that respectively match the first and second heights of the first and second void structures, wherein the first component height is greater than the second component height; and

mounting the top circuit package to the bottom circuit package, including inserting the first and second passive electrical components in the first and second void structures respectively; and electrically coupling the bottom circuit package to the interface side of the top circuit package substrate, wherein the conductor via with vertical sidewalls provides at least a part of the electrical coupling between the top and bottom circuit packages.

2. The method according to claim 1 , further comprising electrically coupling the first and second passive electrical components to the interface side of the top circuit package substrate before mounting the top circuit package substrate to the bottom circuit package.

3. The method according to claim 1 , wherein the first and second passive electrical components comprise at least one of a resistor, capacitor, power component, or through mold via (TMV).

4. The method according to claim 3 , wherein mounting the top circuit package substrate to the bottom circuit package is performed by reflow soldering.

5. The method according to claim 1 , further comprising forming a vertical wall of the first and second void structures to be disposed perpendicular to a horizontal floor of the first and second void structures.

6. The method according to claim 1 , further comprising removing a sacrificial layer from the bottom circuit package to expose the first and second void structures.

7. The method according to claim 1 , wherein disposing the first and second void structures includes at least one of mechanical drilling, laser drilling, or chemical etching of the mold compound layer.

8. The method according to claim 1 , wherein mounting the top circuit package to the bottom circuit package includes electrically coupling the top circuit package and the bottom circuit package with a first ball grid array, wherein the bottom circuit package comprises an interface side of a bottom circuit package substrate, and electrically coupling the interface side of the bottom circuit package substrate to a motherboard with a second ball grid array.

9. The method according to claim 8 , wherein the second ball grid array forms more electrical contacts between the interface side of the bottom circuit package substrate and the motherboard than the first ball grid array forms electrical contacts between the interface side of the top circuit package substrate and the bottom circuit package.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2017
From: KIM, HYOUNG IL
To: INTEL CORPORATION
Reel/Frame 043745/0233 →
Continuity (1)
Related Publication 20190103388A1 · Apr 4, 2019