Doped selective metal caps to improve copper electromigration with ruthenium liner
Embodiments of the present disclosure are related to improved methods for forming an interconnect structure in a substrate. In one implementation, the method includes providing a substrate comprising a metal region and a dielectric region surrounding the metal region, selectively forming a cobalt-containing alloy cap layer on the metal region by exposing the substrate to a first precursor and a second precursor, the first precursor and the second precursor are selected from a group consisting of an aluminum-containing precursor, a cobalt-containing precursor, a ruthenium-containing precursor, a manganese-containing precursor, and a tungsten-containing precursor, wherein the first precursor is different from the second precursor.
1. A method for processing a substrate, comprising:
providing a substrate comprising a metal region and a dielectric region surrounding the metal region; and
selectively forming a cobalt-containing alloy cap layer on the metal region by exposing the substrate to a first precursor and a second precursor, the first precursor is selected from a group consisting of an aluminum-containing precursor, a cobalt-containing precursor, a ruthenium-containing precursor, and a manganese-containing precursor, the second precursor is selected from a group consisting of an aluminum-containing precursor, a cobalt-containing precursor, a ruthenium-containing precursor, and a manganese-containing precursor, wherein the first precursor is different from the second precursor;
forming a barrier layer between the metal region and the dielectric region; and
forming an intermediate region between the metal region and the dielectric region wherein the intermediate region comprises:
a liner layer comprising Ru, Pt, Pd, Os, or Ni material wherein the Ru, Pt, Pd, Os, or Ni material of the liner layer is not present in the barrier layer, and wherein the cobalt-containing alloy cap layer extends onto the liner layer.
2. The method of claim 1 , wherein the substrate is exposed to the first precursor and the second precursor in an alternating manner until a desired thickness of the cobalt-containing alloy cap layer is reached.
3. The method of claim 1 , wherein the intermediate region further comprises:
a seed layer formed on the liner layer.
4. The method of claim 3 , wherein the barrier layer comprises Ta, Ti, TiN, TaN, Mn, MnN, and the seed layer comprises copper, cobalt, nickel, gold, silver, manganese, tin, aluminum, ruthenium, or alloys thereof.
5. The method of claim 4 , wherein the seed layer comprises copper and the liner layer comprises ruthenium (Ru).
6. The method of claim 4 , wherein the seed layer is pure copper, copper aluminum (CuAl) alloy having Al concentration of about 0.1% to about 10%, or copper manganese (CuMn) alloy having Mn concentration of about 0.1% to about 10% in weight.
7. The method of claim 1 , wherein the metal region is formed by an electroplating process or a metal reflow process.