MIM capacitor containing negative capacitance material
A capacitor may include a first conductive layer forming a first capacitor plate, a second conductive layer forming a second capacitor plate, and a first insulating material on the first conductive layer. The first insulating material may include a positive capacitance material. The capacitor may further include a second insulating material disposed over the first insulating material and between the first insulating material and the second conductive layer. The second insulating material may include a negative capacitance ferroelectric material.
1. A capacitor comprising:
a first conductive layer forming a first capacitor plate;
a second conductive layer forming a second capacitor plate;
a first insulating material on the first conductive layer, the first insulating material comprising a positive capacitance material;
a second insulating material disposed directly on the first insulating material and between the first insulating material and the second conductive layer, the second insulating material comprising a negative capacitance ferroelectric material;
a third insulating material on the second insulating material, the third insulating material comprising the positive capacitance material; and
a fourth insulating material on the third insulating material, the fourth insulating material comprising the negative capacitance ferroelectric material.
2. The capacitor of claim 1 , wherein the positive capacitance material is a high-k dielectric material.
3. The capacitor of claim 1 , wherein an absolute value of a capacitance of the negative capacitance ferroelectric material is greater than a capacitance of the positive capacitance material.
4. The capacitor of claim 1 , wherein the negative capacitance ferroelectric material is lead zirconate titanate (PZT).
5. The capacitor of claim 1 , wherein the negative capacitance ferroelectric material is HfZrO 2 .
6. The capacitor of claim 1 , wherein the negative capacitance ferroelectric material is polarized AlInN.
7. The capacitor of claim 1 , integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.
8. A metal oxide semiconductor (MOS) varactor comprising:
a source region of a first polarity;
a drain region of the first polarity;
a channel region of the first polarity between the source region and the drain region, the channel region including a gate;
a first insulating material on the gate, the first insulating material comprising a positive capacitance material;
a second insulating material disposed over the first insulating material and between the first insulating material and a conductive layer, the second insulating material comprising a negative capacitance ferroelectric material
a third insulating material on the second insulating material, the third insulating material comprising the positive capacitance material; and
a fourth insulating material on the third insulating material, the fourth insulating material comprising the negative capacitance ferroelectric material.
9. The MOS varactor of claim 8 , wherein the positive capacitance material is a high-k dielectric material.
10. The MOS varactor of claim 8 , an absolute value of a capacitance of the negative capacitance ferroelectric material is greater than a capacitance of the positive capacitance material.
11. The MOS varactor of claim 8 , wherein the negative capacitance ferroelectric material is selected from the group consisting of lead zirconate titanate (PZT), HfZrO 2 and AlInN.
12. The MOS varactor of claim 8 , integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.