Resist composition and patterning process
A resist composition comprising a base polymer and a metal salt of carboxylic acid or sulfonamide is provided, the metal being selected from calcium, strontium, barium, cerium, aluminum, indium, gallium, thallium scandium, and yttrium. The resist composition exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.
1. A resist composition comprising a base polymer, an organic solvent and a carboxylic acid salt having the formula (A) or a sulfonamide salt having the formula (B):
wherein R 1 is hydrogen, a C 1 -C 30 straight, branched or cyclic alkyl group, C 2 -C 30 straight, branched or cyclic alkenyl group, C 2 -C 30 straight, branched or cyclic alkynyl group, or C 6 -C 20 aryl group, which may contain an ester, ether, sulfide, sulfoxide, carbonate, carbamate, sulfone, amino, amide, hydroxyl, thiol, nitro or halogen moiety, exclusive of iodinated aromatic groups,
R 2 is fluorine, a C 1 -C 10 straight, branched or cyclic fluorinated alkyl group, or fluorinated phenyl group, which may contain a hydroxyl, ether, ester or alkoxy moiety,
R 3 is hydrogen, a C 1 -C 10 straight, branched or cyclic alkyl group, C 2 -C 10 straight, branched or cyclic alkenyl group, C 2 -C 10 straight or branched alkynyl group, or C 6 -C 10 aryl group, which may contain a hydroxyl, ester, ether or alkoxy moiety,
M n+ is a metal ion selected from the group consisting of Ca 2+ , Sr 2+ , Ba 2+ , Ce 3+ , Al 3+ , Ga 3+ , Tl 3+ , Sc 3+ , and Y 3+ , and n indicative of the valence number of M n+ is an integer of 2 or 3,
wherein the base polymer comprises recurring units having the formula (a1) or recurring units having the formula (a2):
wherein R A is each independently hydrogen or methyl, R 11 and R 12 are each independently an acid labile group, X is a single bond, phenylene, naphthylene, or a C 1 -C 12 linking group containing ester moiety or lactone ring, and Y is a single bond or ester group,
wherein the resist composition is a chemically amplified positive resist composition.
2. The resist composition of claim 1 wherein R 1 contains at least one fluorine, bromine or iodine atom.
3. The resist composition of claim 1 , further comprising an acid generator capable of generating sulfonic acid, sulfonimide or sulfonmethide.
4. The resist composition of claim 1 , further comprising a dissolution inhibitor.
5. The resist composition of claim 1 wherein the base polymer further comprises recurring units of at least one type selected from recurring units having the formulae (f1) to (f3):
wherein R A is each independently hydrogen or methyl,
Z 1 is a single bond, phenylene, —O—Z 11 —, or —C(═O)—Z 12 —Z 11 —, Z 11 is a C 1 -C 6 straight, branched or cyclic alkylene group or C 2 -C 6 straight, branched or cyclic alkenylene group which may contain a carbonyl, ester, ether or hydroxyl moiety, or phenylene group, Z 12 is —O— or —NH—,
R 21 , R 22 , R 23 , R 24 , R 25 , R 26 , R 27 , and R 28 are each independently a C 1 -C 12 straight branched or cyclic alkyl group which may contain a carbonyl, ester or ether moiety, or a C 6 -C 12 aryl, C 7 -C 20 aralkyl, or mercaptophenyl group,
Z 2 is a single bond, —Z 21 —C(═O)—O—, —Z 21 —O—, or —Z 21 —O—C(═O)—, Z 21 is a C 1 -C 12 straight, branched or cyclic alkylene group which may contain a carbonyl, ester or ether moiety,
Z 3 is a single bond, methylene, ethylene, phenylene, fluorinated phenylene, —O—Z 31 —, or —C(═O)—Z 32 —Z 31 —, Z 31 is a C 1 -C 6 straight, branched or cyclic alkylene group or C 2 -C 6 straight, branched or cyclic alkenylene group which may contain a carbonyl, ester, ether or hydroxyl moiety, or a phenylene, fluorinated phenylene or trifluoromethyl-substituted phenylene group, Z 32 is —O— or —NH—,
A 1 is hydrogen or trifluoromethyl, and M − is a non-nucleophilic counter ion.
6. The resist composition of claim 1 , further comprising a surfactant.
7. A resist composition comprising a base polymer which is an acid labile group-free polymer, an organic solvent and a carboxylic acid salt or a sulfonamide salt,
wherein the base polymer consists of at least one selected from the group consisting of
recurring units (b) having a phenolic hydroxyl group as an adhesive group,
recurring units (c) having an adhesive group selected from hydroxyl (other than phenolic hydroxyl), lactone ring, ether, ester, carbonyl and cyano groups,
recurring units (d) selected from units of indene, benzofuran, benzothiophene, acenaphthylene, chromone, coumarin, and norbornadiene, or derivatives thereof, and
recurring units (e) which are derived from styrene, vinylnaphthalene, vinylanthracene, vinylpyrene, methyleneindene, vinylpyridine, or vinylcarbazole, and
wherein the carboxylic acid salt has the formula (A) and the sulfonamide salt has the formula (B):
wherein R 1 is hydrogen, a C 1 -C 30 straight, branched or cyclic alkyl group, C 2 -C 30 straight, branched or cyclic alkenyl group, C 2 -C 30 straight, branched or cyclic alkynyl group, or C 6 -C 20 aryl group, which may contain an ester, ether, sulfide, sulfoxide, carbonate, carbamate, sulfone, amino, amide, hydroxyl, thiol, nitro or halogen moiety, exclusive of iodinated aromatic groups,
R 2 is fluorine, a C 1 -C 10 straight, branched or cyclic fluorinated alkyl group, or fluorinated phenyl group, which may contain a hydroxyl, ether, ester or alkoxy moiety,
R 3 is hydrogen, a C 1 -C 10 straight, branched or cyclic alkyl group, C 2 -C 10 straight, branched or cyclic alkenyl group, or C 2 -C 10 straight or branched alkynyl group, or C 6 -C 10 aryl group, which may contain a hydroxyl, ester, ether or alkoxy moiety,
M n+ is a metal ion selected from the group consisting of Ca 2+ , Sr 2+ , Ba 2+ , Ce 3+ , Al 3+ , Ga 3+ , Tl 3+ , Sc 3+ , and Y 3+ , and n indicative of the valence number of M n+ is an integer of 2 or 3.
8. The resist composition of claim 7 , further comprising a crosslinker.
9. The resist composition of claim 7 which is a chemically amplified negative resist composition.
10. A pattern forming process comprising the steps of coating the resist composition of claim 1 onto a substrate, baking, exposing the resulting resist film to high-energy radiation, and developing with a developer.
11. The process of claim 10 wherein the high-energy radiation is ArF excimer laser of wavelength 193 nm or KrF excimer laser of wavelength 248 nm.
12. The process of claim 10 wherein the high-energy radiation is EB or EUV of wavelength 3 to 15 nm.
13. A resist composition comprising a base polymer which is an acid labile group free polymer, an organic solvent and a carboxylic acid salt or a sulfonamide salt,
wherein the base polymer comprises recurring units of at least one type selected from recurring units having the formulae (f1) to (f3):
wherein R A is each independently hydrogen or methyl,
Z 1 is a single bond, phenylene, —O—Z 11 —, or —C(═O)—Z 12 —Z 11 —, Z 11 is a C 1 -C 6 straight, branched or cyclic alkylene group or C 2 -C 6 straight, branched or cyclic alkenylene group which may contain a carbonyl, ester, ether or hydroxyl moiety, or phenylene group, Z 12 is —O—or —NH—,
R 21 , R 22 , R 23 , R 24 , R 25 , R 26 , R 27 , and R 28 are each independently a C 1 -C 12 straight, branched or cyclic alkyl group which may contain a carbonyl, ester or ether moiety, or a C 6 -C 12 aryl, C 7 -C 20 aralkyl, or mercaptophenyl group,
Z 2 is a single bond, —Z 21 —C(═O)—O—, —Z 21 —O—, or —Z 21 —O—C(═O)—, Z 21 is a C 1 -C 12 straight, branched or cyclic alkylene group which may contain a carbonyl, ester or ether moiety,
Z 3 is a single bond, methylene, ethylene, phenylene, fluorinated phenylene, —O—Z 31 —, or —C(═O)—Z 32 —Z 31 —, Z 31 is a C 1 -C 6 straight, branched or cyclic alkylene group or C 2 -C 6 straight, branched or cyclic alkenylene group which may contain a carbonyl, ester, ether or hydroxyl moiety, or a phenylene, fluorinated phenylene or trifluoromethyl-substituted phenylene group, Z 32 is —O— or —NH—,
A 1 is hydrogen or trifluoromethyl, and M − is a non-nucleophilic counter ion, and
wherein the carboxylic acid salt has the formula (A) and the sulfonamide salt has the formula (B):
wherein R 1 is hydrogen, a C 1 -C 30 straight, branched or cyclic alkyl group, C 2 -C 30 straight, branched or cyclic alkenyl group, C 2 -C 30 straight, branched or cyclic alkynyl group, or C 6 -C 20 aryl group, which may contain an ester, ether, sulfide, sulfoxide, carbonate, carbamate, sulfone, amino, amide, hydroxyl, thiol, nitro or halogen moiety, exclusive of iodinated aromatic groups,
R 2 is fluorine, a C 1 -C 10 straight, branched or cyclic fluorinated alkyl group, or fluorinated phenyl group, which may contain a hydroxyl, ether, ester or alkoxy moiety,
R 3 is hydrogen, a C 1 -C 10 straight, branched or cyclic alkyl group, C 2 -C 10 straight, branched or cyclic alkenyl group, C 2 -C 10 straight or branched alkynyl group, or C 6 -C 10 aryl group, which may contain a hydroxyl, ester, ether or alkoxy moiety,
M n+ is a metal ion selected from the group consisting of Ca 2+ , Sr 2+ , Ba 2+ , Ce 3+ , Al 3+ , Ga 3+ , Tl 3+ , Sc 3+ , and Y 3+ , and n indicative of the valence number of M n+ is an integer of 2 or 3.