Heterojunctions in halide perovskite nanostructures
This disclosure provides systems, methods, and apparatus related to heterojunctions in halide perovskite nanostructures. In one aspect, a nanostructure comprises a first region and a second region. The first region comprises ABX 3 , with A being selected from a group consisting of Cs and Rb, with B being selected from a group consisting of Sn and Pb, and with X being selected from a group consisting of Br, Cl, and Br and Cl. The second region comprises ABY 3 , with Y being selected from a group consisting of Br, I, and Br and I. Compositions of the first region of the nanostructure and the second region of the nanostructure are different.
1. A method comprising:
providing a nanostructure comprising ABX 3 , wherein A is selected from a group consisting of cesium (Cs) and rubidium (Rb), wherein B is selected from a group consisting of tin (Sn) and lead (Pb), and wherein X comprises a first halide selected from a group consisting of chlorine (Cl) and bromine (Br);
depositing a polymer on the nanostructure;
removing a portion of the polymer to expose a second region of the nanostructure, a first region of the nanostructure having the polymer disposed thereon; and
contacting the second region of the nanostructure with a solution including a long-chain ammonium halide including a second halide, the second halide being a different halide than the first halide and being selected from a group consisting of Cl, Br, and I, and at least some of the first halide of the nanostructure being replaced with the second halide, a resulting nanostructure comprising the first region, the second region, and a heterojunction between the first region and the second region, the first region comprising a composition ABX 3 , the second region comprising a composition ABY 3 , and wherein the composition of the first region and the composition of the second region are different.
2. The method of claim 1 , wherein the contacting is performed for about 1 minute to 7200 minutes.
3. The method of claim 1 , wherein the solvent of the solution including the long-chain ammonium halide comprises a non-polar solvent.
4. The method of claim 1 , further comprising:
removing a remainder of the polymer from the nanostructure.
5. The method of claim 1 , wherein during the depositing, the removing, and the contacting, the nanostructure is disposed on a substrate.
6. The method of claim 1 , wherein the polymer is selected from a group consisting of methyl methacrylate (MMA), poly(methyl methacrylate) (PMMA), hydrogen silsesquioxane, and halogenated methacrylate homo and copolymers.
7. The method of claim 1 , wherein the nanostructure comprising ABX 3 consists of a single crystal.
8. The method of claim 1 , wherein the nanostructure is selected from a group consisting of a nanowire and a nanoplate.
9. The method of claim 1 , wherein the nanostructure has at least one dimension that is greater than about 500 nanometers.
10. A nanostructure comprising a first region, a second region, and a heterojunction between the first region and the second region, the first region comprising a composition ABX 3 , wherein A is selected from a group consisting of Cs and Rb, wherein B is selected from a group consisting of Sn and Pb, wherein X is selected from a group consisting of Br, Cl, and Br and Cl, the second region comprising a composition ABY 3 , wherein Y is selected from a group consisting of Br, I, and Br and I, and wherein the composition of the first region of the nanostructure and the composition of the second region of the nanostructure are different.
11. The nanostructure of claim 10 , wherein the nanostructure has at least one dimension that is greater than about 500 nanometers.
12. The nanostructure of claim 10 , wherein the first region of the nanostructure comprises AB(Br—Cl) 3 or ABCl 3 , and wherein the second region of the nanostructure comprises ABBr 3 .
13. The nanostructure of claim 10 , wherein the first region of the nanostructure comprises ABBr 3 , and wherein the second region of the nanostructure comprises AB(Br—I) 3 or ABI 3 .
14. The nanostructure of claim 10 , wherein the first region of the nanostructure comprises AB(Br—Cl) 3 or ABCl 3 , and wherein the second region of the nanostructure comprises AB(Br—I) 3 or ABI 3 .
15. The nanostructure of claim 10 , wherein the nanostructure consists of a single crystal.
16. The nanostructure of claim 10 , wherein the nanostructure is selected from a group consisting of a nanowire and a nanoplate.
17. A nanowire comprising a first region, a second region, and a heterojunction between the first region and the second region, wherein the first region of the nanowire comprises ABBr 3 , wherein the second region of the nanowire is selected from a group consisting of AB(Br—Cl) 3 , ABCl 3 , AB(Br—I) 3 , and ABI 3 , wherein A is selected from a group consisting of Cs and Rb, and wherein B is selected from a group consisting of Sn and Pb.
18. The nanowire of claim 17 , wherein the nanowire has a diameter of about 2 nanometers to 1000 nanometers and a length greater than about 500 nanometers.
19. The nanowire of claim 17 , wherein the nanowire consists of a single crystal.