Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition

1. A method of forming an epilayer on a surface of a substrate, the method comprising:

positioning a silicon carbide seed substrate within a hot wall chemical vapor deposition (CVD) chamber;

introducing one or more source gases into the hot wall CVD chamber to provide fluorine, carbon, and silicon to the hot wall CVD chamber, each of the source gases comprising one or more of fluorine, carbon, and silicon;

heating the hot wall CVD chamber to a growth temperature of about 1400° C. to about 2000° C., silicon-fluorine bonds forming at the growth temperature, the silicon-fluorine bond formation inhibiting formation of silicon-silicon bonds in the heated hot wall CVD chamber, the heated hot wall CVD chamber atmosphere including Si—Si vapor in an amount that is less than 5% by volume;

growing a homeoepitaxial film on the silicon carbide seed substrate at the growth temperature, the homeoepitaxial film comprising a silicon carbide crystal comprising silicon and carbon in the crystal at a 1:1 stoichiometric ratio.

2. The method of claim 1 , wherein one or more of the source gases comprises SiH x F y where x=1, 2, or 3; and y=4−x.

3. The method of claim 1 , wherein one or more of the source gases comprises CH x F y where x=0, 1, 2, or 3; and y=4−x.

4. The method of claim 1 , wherein one of the source gases is HF.

5. The method of claim 1 , wherein one or more of the source gases comprises both fluorine and silicon.

6. The method of claim 1 , wherein introducing one or more source gases into the hot wall CVD chamber comprises introducing three source gases into the hot wall chamber, a first source gas comprising silicon, a second source gas comprising fluorine, and a third source gas comprising carbon.

7. The method of claim 1 , wherein one or more of the source gases comprises both fluorine and carbon.

8. The method of claim 1 , wherein one or more of the source gases comprises both silicon and carbon.

9. The method of claim 1 , wherein one or more of the source gases includes chlorine.

10. The method of claim 1 , wherein one of the source gases is methyltrichlorosilane.

11. The method of claim 1 , wherein one or more of the source gases comprise a hydrocarbon gas.

12. The method of claim 1 , wherein parasitic deposition is substantially prevented on a surface of the hot wall CVD chamber during the growth of the homeoepitaxial film.

13. The method of claim 1 , further comprising:

prior to growing the homeoepitaxial film on the silicon carbide seed substrate, growing a buffer epilayer on the surface of the silicon carbide seed substrate, wherein the buffer epilayer comprises SiC.

14. The method of claim 1 , further comprising:

prior to growing the homeoepitaxial film on the surface of the silicon carbide seed substrate, applying a molten mixture comprising KOH and a buffering agent onto the surface of the silicon carbide seed substrate.

15. The method of claim 1 , wherein the hot wall CVD chamber atmosphere includes Si—Si vapor in an amount of less than 1% by volume.

16. The method of claim 1 , wherein the one or more source gases flow into the hot wall CVD chamber at gas flow rates such that the ratio of carbon to silicon in the hot wall CVD chamber is from about 0.3 to about 1.6.

17. The method of claim 1 , wherein the homeoepitaxial film is grown to a thickness that is about 1 μm to about 100 μm.

18. The method of claim 1 , wherein the homeoepitaxial film is grown to a thickness that is greater than 100 μm.

19. The method of claim 1 , wherein the homeoepitaxial film is grown at a growth rate of about 1 μm/hour to about 30 μm/hour.

20. The method of claim 1 , wherein the homeoepitaxial film is grown at a growth rate of 30 μm/hour or faster.