Perpendicular magnetic memory with filament conduction path

1. An apparatus comprising:

first and second electrodes on a substrate;

a perpendicular magnetic tunnel junction (pMTJ), between the first and second electrodes, comprising a dielectric layer between a fixed layer and a free layer; and

a third electrode layer, between the pMTJ and the first electrode, including an additional dielectric layer between first and second metal layers;

wherein first metal layer includes a first metal comprising at least one of Copper (Cu), Hafnium (Hf), Titanium (Ti), Ruthenium (Ru), Aluminum, or Silver (Ag), the second metal layer includes a second metal including at least one of Tungsten (W), Hafnium (Hf), Tantalum (Ta), Platinum (Pt), Palladium (Pd) and Ti, and the additional dielectric layer includes a dielectric and the first metal.

2. The apparatus of claim 1 , wherein the additional dielectric layer directly contacts the first and second metal layers.

3. The apparatus of claim 2 , wherein the dielectric layer includes magnesium (Mg) and oxygen (O), the fixed layer includes at least one of Cobalt (Co), Iron (Fe), Boron (B), Palladium (Pd), Platinum (Pt), Nickel (Ni), or a Heusler alloy, and the free layer includes at least one of Co, Fe, B, Pd, Pt, Ni, or a Heusler alloy.

4. The apparatus of claim 2 , wherein the additional dielectric layer includes (a) a conduction path directly contacting the first and second metal layers, and (b) first and second non-conducting insulative portions directly contacting each of the first metal layer, the second metal layer, and the conduction path.

5. The apparatus of claim 4 , wherein (a) the conduction path interfaces the first metal layer along a first interface having a first width and interfaces the second metal layer along a second interface having a second width, and (b) the second width is smaller than the first width.

6. The apparatus of claim 5 , wherein (a) the additional dielectric layer interfaces the first metal layer along a third interface having a third width and interfaces the second metal layer along a fourth interface having a fourth width, and (b) the first width is smaller than the third width and the second width is smaller than the fourth width.

7. The apparatus of claim 6 , wherein a cross-section, taken in a plane orthogonal to an additional plane in which the substrate is formed, of the conduction path is trapezoidal.

8. The apparatus of claim 6 , wherein the second metal layer directly contacts the pMTJ.

9. The apparatus of claim 8 , wherein the first metal layer directly contacts the first electrode.

10. The apparatus of claim 8 , wherein the second metal layer directly contacts the free layer.

11. The apparatus of claims 6 , wherein the conduction path has a lower electrical resistance than portions of the additional dielectric layer on either side of the conduction path.

12. The apparatus of claims 6 , wherein the conduction path includes oxygen vacancies concentrated around one of the first and second metal layers at a first concentration level and around another of the first and second metal layers at a second concentration level that is less than the first concentration level.

13. The apparatus of claims 6 , wherein the conduction path (a) includes a filament contacting the free layer and the first electrode, and (b) conveys current from the first metal layer to the second metal layer via a path formed within insulative portions of the additional dielectric layer.

14. The apparatus of claim 5 , wherein the second width is no greater than 5 nm.

15. A system comprising:

a processor;

a memory, coupled to the processor, including an apparatus according to claim 1 ; and

a communication module, coupled to the processor, to communicate with a computing node external to the system.

16. An apparatus comprising:

first and second electrodes on a substrate;

a magnetic tunnel junction (MTJ), between the first and second electrodes, comprising a dielectric layer between a fixed layer and a free layer; and

an additional dielectric layer directly contacting first and second metal layers;

wherein (a) the first metal layer includes an active metal and the second metal layer includes an inert metal, and (b) the second metal layer directly contacts the free layer.

17. The apparatus of claim 16 , wherein the additional dielectric layer includes (a) a conduction path directly contacting the first and second metal layers, and (b) first and second non-conducting insulative portions directly contacting each of the first metal layer, the second metal layer, and the conduction path.

18. The apparatus of claim 17 , wherein the first metal layer includes a first metal comprising at least one of Copper (Cu), Hafnium (Hf), Titanium (Ti), Ruthenium (Ru), Aluminum (Al), or Silver (Ag), the second metal layer includes at least one of Tungsten (W), Hafnium (Hf), Tantalum (Ta), Platinum (Pt), Palladium (Pd) or Ti, and the additional dielectric layer includes a nonconducting dielectric and the first metal.

19. The apparatus of claim 17 , wherein the first metal layer includes a first metal comprising at least one of Copper (Cu), Hafnium (Hf), Titanium (Ti), Ruthenium (Ru), Aluminum (Al), or Silver (Ag), the second metal layer includes a second metal having an atomic mass greater than 100 AMU, and the additional dielectric layer includes a nonconducting dielectric and the first metal.

20. The apparatus of claim 17 , wherein the second metal layer includes a second metal having an atomic mass greater than 100 AMU and the additional dielectric layer includes a nonconducting dielectric and a metal that is also included in the first metal layer.

21. The apparatus of claim 17 , wherein (a) the conduction path interfaces the first metal layer along a first interface having a first width and interfaces the second metal layer along a second interface having a second width, and (b) the second width is smaller than the first width.

22. The apparatus of claim 21 , wherein (a) the additional dielectric layer interfaces the first metal layer along a third interface having a third width and interfaces the second metal layer along a fourth interface having a fourth width, and (b) the first width is smaller than the third width and the second width is smaller than the fourth width.

23. An apparatus comprising:

first and second electrodes on a substrate;

a perpendicular magnetic tunnel junction (MTJ), between the first and second electrodes, comprising a dielectric layer between a fixed layer and a free layer; and

an additional dielectric layer directly contacting first and second metal layers;

wherein (a) the first metal layer includes an active metal and the second metal layer includes an inert metal, (b) the second metal layer directly contacts the free layer, and (c) the inert metal has an atomic mass greater than 100 AMU.

24. The apparatus of claim 23 , wherein the additional dielectric layer includes (a) a conduction path directly contacting the first and second metal layers, and (b) first and second non-conducting insulative portions directly contacting each of the first metal layer, the second metal layer, and the conduction path.

25. An apparatus comprising:

a resistive random access memory (RRAM) including a dielectric layer directly contacting first and second metal layers;

wherein the second metal layer directly contacts a node of at least one of a switching device or an interconnect;

wherein first metal layer includes a first metal comprising at least one of Copper (Cu), Hafnium (Hf), Titanium (Ti), Ruthenium (Ru), Aluminum, or Silver (Ag), the second metal layer includes a second metal including at least one of Tungsten (W), Hafnium (Hf), Tantalum (Ta), Platinum (Pt), Palladium (Pd) or Ti, and the dielectric layer includes a dielectric;

wherein the dielectic layer includes the first metal.

26. The apparatus of claim 25 , wherein the node includes a gate node of a transistor.