Light emitting device
An embodiment provides a light emitting element comprising: a first conductive semiconductor layer including a first layer and a second layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a first electrode and a second electrode arranged on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, wherein the first layer includes a plurality of first grooves, and a growth prevention layer is arranged on the bottom surface and side surfaces of each of the first grooves.
1. A light emitting device comprising:
a first conductivity-type semiconductor layer including a first layer and a second layer;
an active layer disposed on the first conductivity-type semiconductor layer;
a second conductivity-type semiconductor layer disposed on the active layer; and
a first electrode and a second electrode disposed on the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively,
wherein the first layer includes a plurality of first grooves, and a growth prevention layer is disposed on a bottom surface and a side surface of one of the first grooves, and
wherein the growth prevention layer has:
an exterior side surface facing the side surface of the first groove,
an interior side surface opposite to the side surface of the first groove,
an exterior bottom surface facing the bottom surface of the first groove,
an interior bottom surface opposite to the bottom surface of the first groove, a height of a top of the exterior side surface from the interior bottom surface being greater than a height of a top of the interior side surface from the interior bottom surface, and
an inclined surface extending between the top of the exterior side surface and the top of the interior side surface.
2. The light emitting device according to claim 1 , wherein the growth prevention layer comprises a material selected from the group consisting of SiO 2 , Si 3 N 4 , SiC, Al 2 O 3 , AlN, HfO 2 , TiO 2 , ZrO 2 , Ta 2 O 3 , Cr, Ta, Mo and W.
3. The light emitting device according to claim 1 , wherein a portion of the second layer is inserted into an upper part of the first groove.
4. The light emitting device according to claim 1 , wherein a void is formed in a part of the first groove.
5. The light emitting device according to claim 1 , wherein a thickness of the growth prevention layer on the side surface of the first groove is 30 nanometers or more.
6. The light emitting device according to claim 1 , wherein a thickness of the growth prevention layer at the side surface of the first groove is smaller than a thickness of the growth prevention layer at the bottom surface of the first groove.
7. The light emitting device according to claim 1 , wherein a height from the interior bottom surface of the growth prevention layer to a top of the exterior side surface of the growth prevention layer is 200 nanometers to 2000 nanometers.
8. The light emitting device according to claim 1 , wherein the inclined surface of the growth prevention layer and the exterior side surface of the growth prevention layer facing the side surface of the first groove form an angle of 70 degrees or less.
9. The light emitting device according to claim 1 , wherein a portion of the second layer is inserted into an upper part of the first groove, and an end of the second layer is disposed at the inclined surface of the growth prevention layer.
10. A light emitting device comprising:
a first conductivity-type semiconductor layer including a first layer and a second layer;
an active layer disposed on the first conductivity-type semiconductor layer;
a second conductivity-type semiconductor layer disposed on the active layer; and
a first electrode and a second electrode disposed on the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively,
wherein:
the first layer includes a plurality of first grooves,
a first growth prevention layer and a second growth prevention layer are sequentially disposed on a bottom surface and a side surface of one of the first grooves,
the first growth prevention layer includes a side segment positioned between the side surface of the first groove and a side segment of the second growth prevention layer, and
a height of a top of the side segment of the first growth prevention layer from an interior bottom surface of the second growth prevention layer, which is opposite to the bottom surface of the first groove, is greater than a height of a top of the side segment of the second growth prevention layer from the interior bottom surface of the second growth prevention layer.
11. The light emitting device according to claim 10 , wherein a difference in height between the top of the side segment of the first growth prevention layer and the top of the side segment of the second growth prevention layer is at least 100 nanometers.
12. The light emitting device according to claim 10 , wherein the first growth prevention layer and the second growth prevention layer comprise a material selected from the group consisting of SiO 2 , Si 3 N 4 , SiC, Al 2 O 3 , AlN, HfO 2 , TiO 2 , ZrO 2 , Ta 2 O 3 , Cr, Ta, Mo and W.
13. The light emitting device according to claim 10 , wherein a portion of the second layer is inserted into an upper part of the first groove and contacts the first growth prevention layer.
14. The light emitting device according to claim 12 , wherein the second layer is spaced from the second growth prevention layer.
15. The light emitting device according to claim 10 , wherein a void is formed in a part of the first groove.
16. The light emitting device according to claim 10 , wherein a portion of the second layer is inserted into an upper part of the first groove.
17. The light emitting device according to claim 10 , wherein a sum of a thickness of the first growth prevention layer and a thickness of the second growth prevention layer is 30 nanometers or more.
18. A light emitting device comprising:
an insulating substrate;
a first conductivity-type semiconductor layer disposed on the insulating substrate and including a first layer and a second layer;
an active layer disposed on the first conductivity-type semiconductor layer;
a second conductivity-type semiconductor layer disposed on the active layer; and
a first electrode and a second electrode disposed on the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively,
wherein the first layer includes a plurality of first grooves and a growth prevention layer is disposed on a bottom surface and a side surface of one of the first grooves,
wherein the growth prevention layer has an inclined surface between a top of an exterior side surface facing the side surface of the first groove and a top of an interior side surface that is opposite to the side surface of the first groove,
wherein a height of the growth prevention layer between the bottom surface of the first groove and the top of the exterior side surface of the growth prevention layer is greater than a height of the growth prevention layer between the bottom surface of the first groove and the top of the interior side surface of the growth prevention layer, and
wherein the growth prevention layer includes an exterior bottom surface facing the bottom surface of the first groove and an interior bottom surface that is opposite to the bottom surface of the first groove, and a height from the interior bottom surface of the growth prevention layer to a top of the growth prevention layer is 200 nanometers to 2000 nanometers.
19. The light emitting device according to claim 18 , wherein the inclined surface and the exterior surface of the growth prevention layer adjacent to the side surface of the first groove form an angle of 70 degrees or less.