Light-emitting diode and method of producing a light-emitting diode

1. A method of producing a plurality of light-emitting diodes comprising:

A) providing a carrier;

B) applying a transparent potting material onto the carrier;

C) providing a plurality of semiconductor chips, wherein each semiconductor chip comprises a radiation side, a contact side opposite the radiation side, and side surfaces extending transversely to the radiation side, wherein the semiconductor chips emit electromagnetic radiation through the radiation side along a main direction of emission extending perpendicular to the radiation side during operation,

D) immersing the semiconductor chips with the radiation side face down so deeply into the potting material that the radiation side and the side surfaces are coated by the potting material in a form-fit manner, but the contact side still protrudes out of the potting material; and

E) singulating the semiconductor chips along separating planes through the potting material and the carrier so that individual light-emitting diodes result, wherein

every light-emitting diode comprises a solid body and a cover element,

the cover element is each a part of the singulized carrier,

the solid body is each a part of the singulized potting material, and

the solid body becomes wider along the main direction of emission in each light-emitting diode.

2. The method according to claim 1 , wherein the potting material is coated with a coating comprising a mirror layer having a reflectivity of at least 80% for the radiation emitted by the semiconductor chip.

3. The method according to claim 2 , wherein

the coating comprises a first passivation layer arranged between the solid body and the mirror layer,

the first passivation layer has a thermal expansion coefficient over the entire area from −20° C. to +100° C., which lies between the thermal expansion coefficient of the solid body and the thermal expansion coefficient of the mirror layer, and

the coating comprises a second passivation layer applied onto outer sides of the mirror layer.

4. The method according to claim 2 , wherein

the mirror layer is guided up to the contact side and electrically-conductively connects to a first contact element,

a second contact element is attached to the contact side for external electrical contacting of the semiconductor body,

the mirror layer electrically-conductively connects to the second contact element,

the mirror layer is interrupted along a gap so that no short-circuit occurs between the first and the second contact element during operation, and

the gap has a width of at most 10 μm.

5. The method according to claim 2 , wherein

a second contact element is attached to the contact side for external electrical contacting of the semiconductor body,

the mirror layer is guided up to the contact side and electrically-conductively connected to the second contact element,

the first contact element and the second contact element lie on top of one another so that in the region of the contact side, the second contact element is arranged between the semiconductor chip and the first contact element, and

the first contact element forms a further mirror completely covering the semiconductor chip in a plan view of the contact side.

6. The method according to claim 2 , wherein side surfaces of the cover element running transversely to a radiation exit surface and shell surfaces of the solid body are completely coated with the mirror layer.

7. The method according to claim 1 , wherein

the solid body comprises or consists of one or more of plastic, silicone, clear silicone, silazane, acrylic, parylene, Omocer and glass, and

the solid body hermetically encapsulates the semiconductor chip.

8. The method according to claim 1 , wherein a second contact element is attached to the contact side for external electrical contacting of the semiconductor body.

9. The method according to claim 1 , wherein the cover element is a plate with two main sides essentially extending in parallel, and the main sides extend essentially parallel to the radiation side.

10. The method according to claim 1 , wherein the cover element has a geometric shape of a lens, and a radiation exit surface is partially or completely concavely or convexly curved.

11. The method according to claim 1 , wherein

the cover element is a tube filled with quantum dots,

the quantum dots cause a conversion of the electromagnetic radiation emitted by the semiconductor chip, and

a longitudinal axis of the tube extends essentially parallel to the radiation side.

12. The method according to claim 1 , wherein at least one of

the semiconductor chips comprises a semiconductor layer sequence and a converter element arranged thereon,

the converter element forms at least the radiation side, and

the converter element comprises quantum dots.

13. The method according to claim 1 , wherein lateral dimensions of the light-emitting diodes parallel to the radiation side are at least 300 μm larger than lateral dimensions of the semiconductor chips.

14. The method according to claim 1 , wherein

the potting material has a viscosity of at most 10 5 Pa·s upon immersion of the semiconductor chips, and

the potting material changes its shape in the area of the semiconductor chips due to surface tensions such that during a subsequent curing process the widening shape of the later solid bodies is formed.

15. The method according to claim 1 , wherein after step D) a mirror layer is deposited onto the potting material from a side facing away from the carrier.

16. The method according to claim 15 , wherein

a sacrificial layer is applied at least onto the contact side before depositing the mirror layer so that the sacrificial layer partially or completely covers the contact side, and

the sacrificial layer is removed after depositing the mirror layer so that the areas previously covered by the sacrificial layer are free from the mirror layer.

17. A light-emitting diode comprising:

an optoelectronic semiconductor chip with a first contact element, a radiation side, a contact side located opposite the radiation side, and side surfaces extending transversely to the radiation side, wherein the first contact element is attached to the contact side for the external electrical contacting of the semiconductor chip,

a transparent solid body,

a cover element, wherein

the semiconductor chip emits electromagnetic radiation through the radiation side along a main direction of emission running transversely to the radiation side during operation,

the semiconductor chip is embedded in the solid body, wherein the side surfaces and the radiation side are covered by the solid body in a form-fit manner,

the solid body widens along the main direction of emission,

the cover element is arranged downstream of the solid body in the main direction of emission and is applied directly onto the solid body,

a side of the cover element facing away from the solid body is formed as a radiation exit surface of the light-emitting diode,

the first contact element is exposed in the unmounted and/or non-contacted state of the light-emitting diode, and

the solid body comprises one or multiple shell surfaces extending transversely to the radiation side,

a mirror layer coated on the shell surfaces, and

a first passivation layer arranged between the solid body and the mirror layer, the first passivation layer having a thermal expansion coefficient over an entire area of −20° C. to +100° C., which lies between a thermal expansion coefficient of the solid body and a thermal expansion coefficient of the mirror layer.