Band edge emission enhanced organic light emitting diode with a localized emitter
A light emitting photonic crystal having an organic light emitting diode and methods of making the same are disclosed. An organic light emitting diode disposed within a photonic structure having a band-gap, or stop-band, allows the photonic structure to emit light at wavelengths occurring at the edges of the band-gap. Photonic crystal structures that provide this function may include materials having a refractive index that varies periodically such as distributed Bragg reflectors, aligned nematic liquid crystals, and holographically recorded gratings.
1. A single light emitting photonic crystal having a bandgap and organic electroluminescent emitter material disposed within the single photonic crystal, wherein the organic electroluminescent emitter material comprises an organic light emitting material localized in a zone having less than 10% of an optical thickness of the photonic crystal, further wherein the organic electroluminescent emitter material has a free space emission spectrum that at least in part overlaps the band-gap of the photonic crystal, further wherein the photonic crystal emits light at a wavelength corresponding to the edge of the band-gap, further wherein the photonic crystal has a periodically varying refractive index, further wherein the photonic crystal further comprises alternating layers of high index of refraction materials and low index of refraction materials, further wherein one of the layers of low index of refraction materials comprises the organic electroluminescent emitter material, and further wherein the layer comprising the organic electroluminescent emitter material further comprises additional organic materials each having a low index of refraction respective to an adjacent layer, wherein the additional organic materials are at least one of a charge transport material, a charge injection material, or a charge blocking material.
2. The single light emitting photonic crystal of claim 1 , wherein the edge of the band-gap occurs at a wavelength at which measured radiance of luminescence light emitted by the organic electroluminescent emitter material is greater than one-quarter of the peak radiance of the luminescence emission spectrum of the emitter material.
3. The single light emitting photonic crystal of claim 2 , wherein the edge of the band occurs at a wavelength at which light absorption for a single pass of light through the emitter layer is less than 1%.
4. The single light emitting photonic crystal of claim 3 , wherein the edge of the band occurs at a wavelength at which light absorption for a single pass of light through the emitter layer is less than ½%.
5. A single light emitting photonic crystal having a bandgap and organic electroluminescent emitter material disposed within the single photonic crystal, wherein the organic electroluminescent emitter material comprises an organic light emitting material localized in a zone having less than 10% of an optical thickness of the photonic crystal, further wherein the organic electroluminescent emitter material has a free space emission spectrum that at least in part overlaps the band-gap of the photonic crystal, further wherein the photonic crystal emits light at a wavelength corresponding to the edge of the band-gap, further wherein the photonic crystal has a periodically varying refractive index, further wherein the photonic crystal further comprises alternating layers of high index of refraction materials and low index of refraction materials, and further wherein the layer comprising the organic electroluminescent emitter material further comprises organic materials each having a high index of refraction respective to an adjacent layer.
6. The single light emitting photonic crystal of claim 5 , wherein the layer comprising the organic electroluminescent emitter material further comprises additional organic materials each having a low index of refraction respective to an adjacent layer, wherein the additional organic materials are at least one of a charge transport material, a charge injection material, or a charge blocking material.
7. The single light emitting photonic crystal of claim 6 , wherein the edge of the band-gap occurs at a wavelength at which measured radiance of luminescence light emitted by the organic electroluminescent emitter material is greater than one-quarter of the peak radiance of the luminescence emission spectrum of the emitter material.
8. The single light emitting photonic crystal of claim 7 , wherein the edge of the band occurs at a wavelength at which light absorption for a single pass of light through the emitter layer is less than 1%.
9. The single light emitting photonic crystal of claim 8 , wherein the edge of the band occurs at a wavelength at which light absorption for a single pass of light through the emitter layer is less than ½%.