IP Library › Granted Patent US 10,233,075
Granted Patent B2
US 10,233,075 · App. 15/739,913 · Granted Mar 19, 2019

Method for forming filter net on MEMS sensor and MEMS sensor

Inventors: Junkai Zhan (Shandong, CN); Zonglin Zhou (Shandong, CN); Guanxun Qiu (Shandong, CN); Mengjin Cai (Shandong, CN)
Assignee: Goertek Inc.
B81B7/0058B81C1/00261B81C3/001B81B2201/02
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Quick Facts
Patent No.
US 10,233,075
App. No.
15/739,913
Granted
Mar 19, 2019
Kind
B2
Abstract

A method for forming a filter net on an MEMS sensor and an MEMS sensor are disclosed. The method comprises the following steps: disposing a dissociable adhesive tape on a base material, and forming a filter net on an adhesive surface of the dissociable adhesive tape; transferring the filter net on a film to form a self-adhesive coiled material; and transferring and adhering the filter net on the self-adhesive coiled material to collecting a hole of the MEMS sensor. The filter net formed by the method have fine and uniform meshes, and a yield is high. In addition, the method is suitable for large-scale and industrialized production.

Claims (28)

1. A method for forming a filter net on an MEMS sensor, the method comprising the following steps:

disposing a dissociable adhesive tape on a base material, and forming a filter net on an adhesive surface of the dissociable adhesive tape;

transferring the filter net on a film to form a self-adhesive coiled material; and

transferring and adhering the filter net on the self-adhesive coiled material to a collecting hole of the MEMS sensor.

2. The method according to claim 1 , wherein meshes of the filter net are formed by adopting a photolithography method or nano-impressing method.

3. The method according to claim 1 , wherein the step of forming the filter net comprises:

disposing a photoresist on the adhesive surface of the dissociable adhesive tape;

adopting the photolithography method to etch the photoresist to form a first hollowed-out pattern matched with frameworks of the filter net;

depositing a structural material in the first hollowed-out pattern; and

removing the photoresist to form the filter net.

4. The method according to claim 1 , wherein the step of forming the filter net comprises:

depositing a structural material on the adhesive surface of the dissociable adhesive tape;

disposing a photoresist on the surface of the structural material;

adopting the photolithography method to etch the photoresist to form a second hollowed-out pattern matched with the meshes of the filter net;

etching the structural material according to the second hollowed-out pattern to form the meshes; and

removing the photoresist to form the filter net.

5. The method according to claim 4 , wherein the structural material forming the filter net is metal, ceramic or a high polymer material.

6. The method according to claim 4 , wherein the structural material is deposited by adopting a low temperature vacuum sputtering method.

7. The method according to claim 1 , wherein a size of the meshes of the filter net is smaller than or equal to 30 μm.

8. The method according to claim 1 , wherein the step of forming the filter net comprises:

disposing the photoresist on the adhesive surface of the dissociable adhesive tape;

adopting the photolithography method to etch the photoresist to form the filter net; and

heating the filter net formed by etching to cure the filter net.

9. The method according to claim 1 , wherein the step of forming the filter net comprises:

disposing the photoresist on the adhesive surface of the dissociable adhesive tape;

adopting the nano-impressing method to impress the photoresist to form the filter net; and

heating the filter net formed by etching to cure the same.

10. An MEMS sensor, comprising an external packaging structure defined by a substrate and a shell and an MEMS chip disposed in the external packaging structure, wherein the external packaging structure has collecting holes for communicating the MEMS chip with an external space, and the collecting holes are provided with the filter net obtained by using the method according to claim 1 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2020
From: GOERTEK, INC.
To: WEIFANG GOERTEK MICROELECTRONICS CO., LTD.
Reel/Frame 052846/0443 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 26, 2017
From: ZHAN, JUNKAI; ZHOU, ZONGLIN; QIU, GUANXUN; CAI, MENGJIN
To: GOERTEK INC.
Reel/Frame 044485/0833 →
Priority Claims (1)
CN 2016 1 1041741 · Nov 22, 2016 · national
Continuity (1)
Related Publication 20180362331A1 · Dec 20, 2018