Photosensitive resin composition, polyimide production method, and semiconductor device
A photosensitive resin composition, ensuring that after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and a high-adhesion polyimide layer is obtained, and a polyimide using the photosensitive resin composition, can be provided. Furthermore, a semiconductor device in which after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and short circuiting or disconnection following a high-temperature storage test is unlikely to occur. A photosensitive resin composition is characterized by including a component (A) as a photosensitive polyimide precursor, and a component (B) containing a structure represented by formula (B1). (In formula (B1), Z is a sulfur or oxygen atom, and each of R 1 to R 4 independently represents a hydrogen atom or a monovalent organic group).
1. A photosensitive resin composition comprising:
a component (A) as a photosensitive polyimide precursor, and
a component (B) that is at least one member selected from following (B3) to (B5):
2. The photosensitive resin composition according to claim 1 , wherein the component (A) is a photosensitive polyimide precursor containing a structure represented by the following formula (A1):
where:
X is a tetravalent organic group,
Y is a divalent organic group, and
each of R 5 and R 6 is independently:
a hydrogen atom,
a C 1 -C 4 saturated aliphatic group, or
a monovalent organic group represented by the following formula (R1):
where:
each of R 7 , R 8 and R 9 is independently a hydrogen atom or a C 1 -C 3 organic group, and
p is an integer selected from the range of 2 to 10,
provided that R 5 and R 6 are not both a hydrogen atom at the same time.
3. The photosensitive resin composition according to claim 1 , wherein the component (B) is at least one member selected from (B3) and (B4).
4. The photosensitive resin composition according to claim 2 , wherein X in formula (A1) is at least one or more tetravalent organic groups selected from the following (C1) to (C3):
5. The photosensitive resin composition according to claim 2 , wherein Y in formula (A1) is at least one or more divalent organic groups selected from the following (D1) to (D3):
where R 10 to R 13 are a hydrogen atom or a C 1 -C 4 monovalent aliphatic group and may be different from or the same as one another,
where R 14 to R 21 are a hydrogen atom, a halogen atom, or a C 1 -C 4 monovalent organic group and may different from or the same as one another.
6. The photosensitive resin composition according to claim 5 , wherein Y in formula (A1) is (D3).
7. The photosensitive resin composition according to claim 2 , wherein X in formula (A1) is the following (C3):
and Y is the following (D2):
8. The photosensitive resin composition according to claim 2 , wherein X in formula (A1) is the following (C2):
and Y is the following (D2):
9. The photosensitive resin composition according to claim 1 , wherein the content of the component (B) is from 0.1 to 10 parts by mass per 100 parts by mass of the component (A).
10. The photosensitive resin composition according to claim 1 , wherein the content of the component (B) is from 0.5 to 5 parts by mass per 100 parts by mass of the component (A).
11. The photosensitive resin composition according to claim 1 , wherein the component (A) is a polyamic acid derivative having a radical polymerizable substituent on the side chain.
12. A polyimide obtained by curing the photosensitive resin composition according to claim 1 .
13. A method for producing a polyimide, comprising:
applying the photosensitive resin composition according to claim 1 onto a substrate, and
imidizing the photosensitive resin composition.
14. A semiconductor device comprising copper wiring and an insulating layer provided on the copper wiring, wherein:
after storage in air with a humidity of 5% for 168 hours under the condition of 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer, wherein the insulating layer contains the polyimide according to claim 12 .