Optoelectronic semiconductor component
An optoelectronic semiconductor component is disclosed, comprising: a semiconductor body ( 1 ) having a semiconductor layer sequence ( 2 ) with a p-type semiconductor region ( 3 ), an n-type semiconductor region ( 5 ), and an active layer ( 4 ) arranged between the p-type semiconductor region ( 3 ) and the n-type semiconductor region ( 5 ); a support ( 10 ) having a plastic material and a first via ( 11 ) and a second via ( 12 ); a p-contact layer ( 7 ) and an n-contact layer ( 8 ), at least some regions of which are arranged between the support ( 10 ) and the semiconductor body ( 1 ), wherein the p-contact layer ( 7 ) connects the first via ( 11 ) to the p-type semiconductor region ( 3 ) and the n-contact layer ( 8, 8 A) connects the second via ( 12 ) to the n-type semiconductor region ( 5 ); and an ESD protection element ( 15 ) which is arranged between the support ( 10 ) and the semiconductor body ( 1 ), wherein the ESD protection element ( 15 ) is electrically conductively connected to the first via ( 11 ) and to the second via ( 12 ), and wherein a forward direction of the ESD protection element ( 15 ) is anti-parallel to a forward direction of the semiconductor layer sequence ( 2 ).
1. Optoelectronic semiconductor device with
a semiconductor body which comprises a semiconductor layer sequence with a p-type semiconductor region, an n-type semiconductor region and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region,
a carrier, which comprises a plastics material and comprises a first through-via and a second through-via,
a p-connection layer and an n-connection layer, which are arranged at least in places between the carrier and the semiconductor body, wherein the p-connection layer connects the first through-via with the p-type semiconductor region and the n-connection layer connects the second through-via with the n-type semiconductor region,
an ESD protective element, which is arranged between the carrier and the semiconductor body, wherein the ESD protective element is electrically conductively connected with the first through-via and the second through-via, and wherein a conducting direction of the ESD protective element is antiparallel to a conducting direction of the semiconductor layer sequence, and wherein the ESD protective element directly adjoins the first through-via and the second through-via.
2. Optoelectronic semiconductor device according to claim 1 , wherein the ESD protective element takes the form of a planar layer.
3. Optoelectronic semiconductor device according to claim 1 , wherein the ESD protective element takes the form of a diode, Schottky contact or varistor.
4. Optoelectronic semiconductor device according to claim 1 , wherein the ESD protective element comprises at least one of the materials ZnO, Si, TiO, ITO, SnO, Ge, Se, Te, AlN or graphene.
5. Optoelectronic semiconductor device according to claim 1 , wherein the ESD protective element is arranged at a boundary surface of the carrier facing the semiconductor body.
6. Optoelectronic semiconductor device according to claim 1 , wherein the ESD protective element is a diode, which comprises a p-conductive region and an n-conductive region, wherein the n-conductive region is electrically conductively connected with the first through-via and the p-conductive region is electrically conductively connected with the second through-via.
7. Optoelectronic semiconductor device according to claim 6 , wherein the p-conductive region and the n-conductive region form a linear connection between the first through-via and the second through-via.
8. Optoelectronic semiconductor device according to claim 1 , wherein the carrier comprises an epoxy resin or a silicone.
9. Optoelectronic semiconductor device according to claim 1 , wherein the n-connection layer is passed through an opening in the p-type-semiconductor region and the active layer into the n-type semiconductor region.