Bipolar battery seal and thermal rib arrangements
A current collector assembly, such as for a bipolar lead acid battery, can include an electrically-conductive silicon substrate and a frame bonded to the electrically-conductive silicon substrate. The substrate can be treated or modified, such as to include one or more thin films which render a surface substrate electrically conductive and electrochemically stable in the presence of a lead acid electrolyte chemistry. An interface between the frame and the electrically-conductive silicon substrate can be hermetically sealed. In an example, the frame can provide an edge-seal ring configuration. In an example, a casing assembly can include a spacer bonded to the substrate, along with a casing segment and a thermally-conductive rib, the spacer isolating the thermally-conductive rib from the electrically-conductive silicon substrate electrically.
1. A current collector assembly for a bipolar lead acid battery comprising:
an electrically-conductive silicon substrate;
a frame coupled to the electrically-conductive silicon substrate, the electrically-conductive silicon substrate including one or more thin films which render a surface of the electrically-conductive silicon substrate electrically conductive and electrochemically stable in the presence of a lead acid electrolyte chemistry; and
a casing segment and a thermally-conductive rib, the thermally-conductive rib mechanically coupled to the casing segment and the frame, wherein the frame forms a spacer that isolates the thermally-conductive rib from the electrically-conductive silicon substrate electrically.
2. The current collector assembly of claim 1 , wherein the frame comprises a support frame.
3. The current collector assembly of claim 2 , wherein the support frame and the casing segment of a bipolar battery casing form a single assembly.
4. The current collector assembly of claim 1 , wherein the frame comprises an edge-seal extending around an entirety of a perimeter of the surface of the electrically-conductive silicon substrate.
5. The current collector assembly of claim 1 , wherein the frame defines an edge-exclusion region on the electrically-conductive substrate.
6. The current collector assembly of claim 5 , wherein deposition of the one or more thin films is inhibited in the edge-exclusion region by the edge-seal.
7. The current collector assembly of claim 1 , wherein a thin film amongst the one or more thin films comprises a metal silicide formed on at least one surface of the electrically-conductive silicon substrate.
8. The current collector assembly of claim 7 , wherein the metal comprises one or more of titanium (Ti), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zirconium (Zr), niobium (Nb), molybdenum (Mo), palladium (Pd), tantalum (Ta), tungsten (W), or platinum (Pt).
9. The current collector assembly of claim 7 , wherein an additional film is deposited on the metal silicide to promote adhesion of an active material.
10. The current collector assembly of claim 9 , wherein the additional film comprises a lead metal (Pb) or a lead-tin alloy (PbSn).
11. A method for providing a current collector for a bipolar lead acid battery, the method comprising:
supporting an electrically-conductive silicon substrate using a frame;
modifying the electrically-conductive silicon substrate with one or more thin films which render a surface of the silicon conductive and electrochemically stable in lead acid electrolyte chemistry; and
mechanically coupling a thermally-conductive rib to a casing segment and the frame to form a single assembly, wherein the frame forms a spacer that isolates the thermally-conductive rib from the electrically-conductive silicon substrate electrically.
12. The method of claim 11 , wherein the frame comprises an edge-seal extending around an entirety of a perimeter of the surface of the electrically-conductive silicon substrate.
13. The method of claim 11 , wherein the frame defines an edge-exclusion region on the electrically-conductive substrate.
14. The method of claim 13 , wherein deposition of the one or more thin films is inhibited in the edge-exclusion region by the edge-seal.
15. The method of claim 11 , wherein the frame is bonded to the electrically-conductive silicon substrate directly by intermolecular forces.
16. The method of claim 11 , wherein the frame is bonded to the wafer with an adhesive at high temperature under compressive forces.
17. The method of claim 11 , wherein the frame is bonded to the wafer using one or more of plasma activated bonding, glass frit bonding, or anodic bonding.
18. The method of claim 11 , wherein a thin film amongst the one or more thin films comprises a metal silicide formed on at least one surface of the electrically-conductive silicon substrate.