Nanowires or nanopyramids grown on graphitic substrate
A composition of matter comprising: a graphitic substrate optionally carried on a support; a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowires or nanopyramids comprising at least one semiconducting group III-V compound.
1. A composition of matter comprising:
a graphitic substrate;
a seed layer having a thickness of 50 nm or less deposited directly on top of the graphitic substrate; and
an oxide or nitride masking layer directly on top of the seed layer;
wherein a plurality of holes are present through the seed layer and through the masking layer to the graphitic substrate;
wherein a plurality of nanowires or nanopyramids are grown epitaxially from the graphitic substrate in the plurality of holes, wherein the plurality of nanowires or nanopyramids comprise at least one semiconducting group III-V compound; and
wherein the surface of the graphitic substrate is chemically and/or physically modified in the plurality of holes to enhance the epitaxial growth of the plurality of nanowires or nanopyramids.
2. The composition of claim 1 , wherein the seed layer is a metallic layer or a layer of oxidized or nitridized metal.
3. The composition of claim 1 , wherein the graphitic substrate is graphene.
4. The composition of claim 1 , wherein the graphitic substrate has a thickness of 20 nm or less.
5. The composition of claim 1 , wherein the seed layer is a metal layer comprising Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, B, Al, Si, Ge, Sb, Ta, W, or Nb, or an oxidized layer thereof.
6. The composition of claim 1 , wherein the masking layer comprises a metal oxide or metal nitride.
7. The composition of claim 1 , wherein the masking layer comprises Al 2 O 3 , TiO 2 , SiO 2 , AlN, BN or Si 3 N 4 .
8. The composition of claim 1 , wherein the composition further comprises a support, such that the graphitic substrate is carried on the support and the seed layer is deposited on top of the graphitic substrate opposite the support, and the support comprises a semiconductor substrate, transparent glass, AlN or silicon carbide.
9. The composition of claim 8 , wherein the support comprises a semiconductor substrate comprising crystalline Si or GaAs with a crystal orientation of [111], [110], or [100] perpendicular to the surface; or a transparent glass of fused silica or fused alumina.
10. The composition of claim 1 , wherein the plurality of nanowires or nanopyramids are doped.
11. The composition of claim 1 , wherein the plurality of nanowires or nanopyramids are a plurality of core-shell nanowires or nanopyramids or a plurality of radially heterostructured nanowires or nanopyramids.
12. The composition of claim 1 , wherein the plurality of nanowires or nanopyramids are a plurality of axially heterostructured nanowires or nanopyramids.
13. The composition of claim 1 , further comprising a graphitic top contact layer present on top of the plurality of nanowires or nanopyramids.
14. The composition of claim 1 , wherein the masking layer comprises at least two different layers.
15. A process comprising:
(I) providing a graphitic substrate on a support and depositing a seed layer on the graphitic substrate, the seed layer having a thickness of 50 nm or less;
(II) oxidising or nitridizing the seed layer to form an oxidised or nitridized seed layer;
(III) introducing a plurality of holes in the oxidised or nitridized seed layer the holes penetrating to the graphitic substrate; and
(IV) growing a plurality of semiconducting group III-V nanowires or nanopyramids in the plurality of holes.
16. The process of claim 15 , wherein the graphitic substrate comprises CVD grown single or multi-layer graphene on a metal catalyst layer; and
wherein the process further comprises:
depositing a polymer layer on the oxidized or nitridized seed layer before introducing the plurality of holes;
transferring the graphitic substrate from the metal catalyst layer to a second support using the polymer layer as a scaffold for the transfer; and
introducing the plurality of holes such that the plurality of holes penetrate through all layers present to the graphitic substrate on the second substrate.
17. The process of claim 16 , wherein transferring the graphitic substrate comprises an electrochemical delamination method employing an aqueous electrolyte comprising an acid, hydroxide, carbonate, or chloride solution.
18. A process comprising:
(I) providing a graphitic substrate on a support and depositing a seed layer on the graphitic substrate, the seed layer having a thickness of 50 nm or less;
(II) depositing an oxide or nitride masking layer on the seed layer;
(III) introducing a plurality of holes in the seed layer and the masking layer, the holes penetrating to the graphitic substrate; and
(IV) growing a plurality of semiconducting group III-V nanowires or nanopyramids in the plurality of holes.
19. The process of claim 18 , wherein the graphitic substrate comprises CVD grown single or multi-layer graphene on a metal catalyst layer; and
wherein the process further comprises:
depositing a polymer layer on the masking layer before introducing the plurality of holes;
transferring the graphitic substrate from the metal catalyst layer to a second support using the polymer layer as a scaffold for the transfer; and
introducing the plurality of holes such that the plurality of holes penetrate through all layers present to the graphitic substrate on the second substrate.