Negative photoresist composition for KrF laser for forming semiconductor patterns
Provided is a negative photoresist composition for a KrF laser for semiconductor pattern formation, which includes a predetermined compound in order to improve the properties of a conventional negative photoresist, thereby realizing high transparency, high resolution and an excellent profile, even in the presence of an exposure source having a short wavelength compared to the conventional negative photoresist, and is thus suitable for use in semiconductor processing.
1. A negative photoresist composition for a KrF laser, comprising 5 to 60 wt % of a polymer resin, 0.1 to 4 wt % of a compound represented by Chemical Formula 3 below, 1 to 10 wt % of a crosslinking agent, 0.1 to 10 wt % of a photoacid generator, 0.01 to 5 wt % of an acid diffusion inhibitor and a remainder of a solvent:
in Chemical Formula 3, R is acryloyl.
2. The negative photoresist composition of claim 1 , wherein the compound represented by Chemical Formula 3 is obtained by subjecting 1,1,1-tri(4-hydroxyphenyl)ethane to a substitution reaction with acryloyl chloride.
3. The negative photoresist composition of claim 1 , wherein the polymer resin is at least one selected from the group consisting of a phenol polymer resin and a cresol polymer resin, each having a hydroxyl group.
4. The negative photoresist composition of claim 3 , wherein the phenol polymer resin is obtained from at least one monomer selected from the group consisting of 4-hydroxy-3-methyl benzoic acid, 4-hydroxy-2-methyl benzoic acid, 5-hydroxy-2-methyl benzoic acid, 3,5-di-tert-butyl-4-hydroxy benzoic acid, 4-hydroxy-3,5-dimethyl benzoic acid, 4-hydroxy isophthalic acid, 2,4,6-hydroxy toluene, 2,4,6-trihydroxy benzoic acid monohydrate and 2,4,6-trihydroxy benzaldehyde, and the cresol polymer resin is obtained from at least one monomer selected from the group consisting of o-cresol, p-cresol, m-cresol, epoxy o-cresol, epoxy p-cresol and epoxy m-cresol.
5. The negative photoresist composition of claim 1 , wherein the crosslinking agent includes at least one selected from the group consisting of tris(2,3-epoxypropyl)isocyanurate, trimethylolmethane triglycidyl ether, trimethylolpropane triglycidyl ether, hexamethylol melamine, trimethylolethane triglycidyl ether, hexamethoxymethyl melamine, hexamethoxyethyl melamine, tetramethylol 2,4-diamino-1,3,5-triazine, tetramethoxymethyl-2,4-diamino-1,3,5-triazine, tetramethylol glycoluril, tetramethoxymethyl glycoluril, tetramethoxyethyl glycoluril, tetramethylolurea, tetramethoxymethylurea, tetramethoxyethylurea and tetramethoxyethyl-2,4-diamino-1,3,5-triazine.
6. The negative photoresist composition of claim 1 , wherein the photoacid generator includes at least one selected from the group consisting of triphenylsulfonium triflate, triphenylsulfonium antimonate, diphenyliodonium triflate, diphenyliodonium antimonate, methoxydiphenyliodonium triflate, di-t-butyldiphenyliodonium triflate, norbornene dicarboxyimide triflate, triphenylsulfonium nonaflate, diphenyliodonium nonaflate, methoxydiphenyliodonium nonaflate, di-t-butyldiphenyliodonium nonaflate, N-hydroxysuccinimide nonaflate, norbornene dicarboxyimide nonaflate, triphenylsulfonium perfluorooctane sulfonate, diphenyl iodonium perfluorooctane sulfonate, methoxydiphenyl iodonium perfluorooctane sulfonate, di-t-butyldiphenyliodonium perfluorooctane sulfonate, N-hydroxysuccinimide perfluorooctane sulfonate and norbornene dicarboxyimide perfluorooctane sulfonate.
7. The negative photoresist composition of claim 1 , wherein the acid diffusion inhibitor includes at least one selected from the group consisting of dimethylamine, diethylamine, trimethylamine, triethylamine, tributylamine, dimethanolamine, diethanolamine, trimethanolamine, triethanolamine and tributanolamine.