IP Library Granted Patent US 10,470,285
Granted Patent B2
US 10,470,285 · App. 15/744,913 · Granted Nov 5, 2019

Electrode assembly and plasma source for generating a non-thermal plasma, and method for operating a plasma source

Inventors: Gregor Morfill (München, DE); Tetsuji Shimizu (Ibaraki, JP); Yangfang Li (Olching, DE)
Assignee: terraplasma GmbH
H05H1/2406H01J37/32532H01J49/10H05H1/46H05H2001/2412H05H2001/2418
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Quick Facts
Patent No.
US 10,470,285
App. No.
15/744,913
Granted
Nov 5, 2019
Kind
B2
Abstract

The invention relates to an electrode assembly ( 5 ) for generating a non-thermal plasma, comprising a first electrode ( 7 ) and a second electrode ( 9 ) which are electrically insulated from each other by means of a dielectric element ( 11 ) and which are arranged at a distance from each other. The first electrode ( 7 ) has a thickness of at least 10 μm when seen in the direction of the distance between the electrodes ( 7, 9 ), and the second electrode ( 9 ) has a thickness of at least 1 μm to maximally 5 μm or a thickness of at least 5 μm to maximally 30 μm when seen in the direction of the distance between the electrodes ( 7, 9 ). The dielectric element ( 11 ) has a thickness of at least 10 μm to maximally 250 μm.

Claims (32)

1. An electrode arrangement for generating a nonthermal plasma, comprising:

a first electrode and a second electrode that are electrically insulated from each other and spaced from each other in a stack direction of the electrodes by a dielectric element, the first and second electrodes being disposed on opposite sides of the dielectric element along the stack direction,

wherein the first electrode, in the stack direction, has a thickness of at least 10 μm,

wherein the second electrode, in the stack direction, has a thickness of at least 1 μm to at most 30 μm,

wherein the dielectric element, in the stack direction, has a thickness of at least 10 μm to at most 250 μm, and

wherein the first and the second electrodes are continuously spatially separated in the stack direction by the dielectric element from each other without interruption along an entire extension of the dielectric element.

2. The electrode arrangement according to claim 1 , wherein the second electrode, in the stack direction, has a thickness of at least 1 μm to at most 5 μm.

3. The electrode arrangement according to claim 1 , wherein the first electrode has a dielectric base element on a side facing away from the dielectric element.

4. The electrode arrangement according to claim 1 , wherein at least one electrode, selected from the first electrode and the second electrode, has a material including copper, silver, gold or aluminum.

5. The electrode arrangement according to claim 1 , wherein the dielectric element has a material including silicon nitride, a silicate, a glass or a plastic.

6. The electrode arrangement according to claim 5 , wherein the dielectric element is made of quartz.

7. The electrode arrangement according to claim 5 , wherein the dielectric element is made of a polyamide.

8. The electrode arrangement according to claim 1 , wherein the first electrode is flat.

9. The electrode arrangement according to claim 1 , wherein the second electrode has a comb-like structure, a linear structure with at least one imaginary line, a winding structure, a spiral structure, a meandering structure or a flat structure with at least one recess.

10. The electrode arrangement according to claim 1 , wherein the dielectric element has an average surface roughness (Ra) that is less than 5% of the thickness of the element.

11. A plasma source for generating a nonthermal plasma with a voltage source and an electrode arrangement according to claim 1 , wherein the voltage source is electrically connected at least to the first electrode.

12. The plasma source according to claim 11 , wherein the voltage source is an AC voltage source, and wherein the second electrode is earthed or grounded.

13. The plasma source according to claim 11 , wherein the plasma source is configured to generate AC voltage with an amplitude of at least 0.5 kVpp to at most 3 kVpp.

14. The plasma source according to claim 11 , wherein the plasma source has a piezoamplifier.

15. The electrode arrangement according to claim 1 , wherein the second electrode in the stack direction has a thickness of at least 5 μm to at most 30 μm.

16. The electrode arrangement according to claim 1 , wherein the second electrode has a dielectric cover element on a side facing away from the dielectric element, which dielectric cover element in the stack direction has a thickness of at least 0.2 μm to at most 30 μm.

17. The electrode arrangement according to claim 16 , wherein the dielectric cover element has a material including silicon nitride, a silicate, a glass or a plastic.

18. A method for operating a plasma source, comprising

providing an electrode arrangement comprising

a first electrode and a second electrode that are electrically insulated from each other and spaced from each other in a stack direction by a dielectric element, the first and second electrodes being disposed on opposite sides of the dielectric element along the stack direction,

wherein the first electrode, in the stack direction, has a thickness of at least 10 μm,

wherein the second electrode, in the stack direction, has a thickness of at least 1 μm to at most 30 μm,

wherein the dielectric element, in the stack direction, has a thickness of at least 10 μm to at most 250 μm, and

wherein the first and the second electrodes are continuously spatially separated in the stack direction by the dielectric element from each other without interruption along an entire extension of the dielectric element; and

applying by means of a voltage source an electrical voltage to the electrode arrangement to generate a nonthermal plasma.

19. The method according to claim 18 , wherein applying the electrical voltage includes applying an AC voltage with an amplitude of at least 0.5 kVpp to at most 3 kVpp.

20. The method according to claim 18 , wherein applying the electrical voltage includes applying an AC voltage having a frequency of at least 20 kHz to at most 90 kHz.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 30, 2018
From: MORFILL, GREGOR; SHIMIZU, TETSUJI; LI, YANGFANG
To: TERRAPLASMA GMBH
Reel/Frame 044765/0453 →
Priority Claims (1)
DE 10 2015 213 975 · Jul 23, 2015 · national
Continuity (1)
Related Publication 20180206321A1 · Jul 19, 2018