Method of producing an apparatus, apparatus and optoelectronic component
A method for producing an apparatus, an apparatus and an optoelectronic component are disclosed. In an embodiment the method includes providing a carrier, depositing an amorphous ALD layer on the carrier using an ALD method and recrystallizing the amorphous ALD layer into a crystalline layer.
1. A method of producing an apparatus, the method comprising:
providing a carrier;
depositing an amorphous ALD layer on the carrier using an ALD method; and
recrystallizing the amorphous ALD layer into a crystalline layer,
wherein the amorphous ALD layer comprises aluminum oxide, which is converted by recrystallization to crystalline aluminum oxyhydroxide (γ-AlOOH) so that the crystalline layer comprises crystalline γ-AlOOH.
2. The method according to claim 1 , wherein the amorphous ALD layer has a thickness between 10 nanometers and 200 nanometers inclusive.
3. The method according to claim 1 , wherein the amorphous ALD layer is recrystallized by exposure to a temperature and/or a humidity and/or a pressure.
4. The method according to claim 3 , wherein the temperature and/or the humidity and/or the pressure varies.
5. The method according to claim 1 , wherein the amorphous ALD layer is recrystallized by exposure to a temperature between 100° C. and 140° C. inclusive.
6. The method according to claim 1 , wherein the amorphous ALD layer is recrystallized by exposure to a pressure between 1 mbar bar and 3.0 bar inclusive.
7. The method according to claim 1 , wherein the amorphous ALD layer is recrystallized by exposure to a humidity in which a water content of a gaseous medium at least partly surrounding the amorphous ALD layer is between 50% and 100% relative humidity inclusive.
8. The method according to claim 7 , wherein no water condenses on the amorphous ALD layer from the gaseous medium.
9. The method according to claim 1 , wherein the crystalline layer comprises γ-AlOOH, and wherein the crystalline layer is converted to crystalline γ-Al 2 O 3 by annealing.
10. The method according to claim 1 , wherein the crystalline layer is catalytically active.
11. An optoelectronic component comprising:
a carrier; and
a crystalline layer attached to the carrier in a mechanically stable manner and without a joining layer, wherein the crystalline layer comprises aluminum oxyhydroxide (γ-AlOOH).
12. The optoelectronic component according to claim 11 , wherein the crystalline layer is covalently coupled to the carrier.
13. The optoelectronic component according to claim 11 , wherein the carrier comprises one of the following materials: a III/V compound semiconductor material, germanium, silicon, glass.
14. The optoelectronic component according to claim 11 , wherein the crystalline layer has an RMS roughness R q of at least 5 nanometers.
15. The optoelectronic component according to claim 11 , wherein a main surface of the carrier on which the crystalline layer is located has a patterning, an aspect ratio of which is at least 0.2.
16. The optoelectronic component according to claim 11 , wherein the crystalline layer acts as a light extraction layer or a passivation layer.
17. An optoelectronic component comprising:
a carrier; and
a crystalline layer attached to the carrier in a mechanically stable manner and without a joining layer, wherein the crystalline layer comprises aluminum oxyhydroxide (γ-AlOOH), wherein the crystalline layer acts as a light extraction layer or a passivation layer.