A METHOD FOR PREPARING ELECTROPLATING COPPER LAYER WITH PREFERRED GROWTH ORIENTATION
A method of preparing an electroplating copper layer having a preferred growth orientation includes: providing an electroplating solution that includes 120 to 200 g/L of copper sulfate, 50 to 150 g/L of sulfuric acid, 100 to 1000 ppm of a wetting agent, 5 to 50 ppm of a brightener, 40 to 100 ppm of a non-dye leveler, and water; providing a phosphorous copper anode that includes 0.03-150 wt % of phosphor; and conducting electroplating at a current density of 1-18 A/dm 2 ; and applying mechanical stirring to ensure an uniform concentration distribution of the electroplating solution and to increase mass transfer.
1 . A method of preparing an electroplating copper layer having a preferred growth orientation comprising:
providing an electroplating solution that includes 120 to 200 g/L of copper sulfate, 50 to 150 g/L of sulfuric acid, 100 to 1000 ppm of a wetting agent, 5 to 50 ppm of a brightener, 40 to 100 ppm of a non-dye leveler, and water;
providing a phosphorous copper anode that includes 0.03-150 wt % of phosphor; and
conducting electroplating at a current density of 1-18 A/dm 2 ; and
applying mechanical stirring to ensure an uniform concentration distribution of the electroplating solution and to increase mass transfer.
2 . The method of claim 1 , wherein the wetting agent is polyethylene glycol, polyethyleneimine, 2-mercaptoethanol, polypropylene ether, or poly N,N′-diethylsaphranin.
3 . The method of claim 1 , wherein the brightener is an organosulfate having formula (II):
in formula (II), X is O or S; n is 1 to 6; M is hydrogen, alkali metal, or ammonium; R 1 is an alkylene, cyclic alkylene group of 1 to 8 carbon atoms, or an aromatic hydrocarbon of 6 to 12 carbon atoms; and R 2 is MO 3 SR 1 .
4 . The method of claim 3 , wherein the organosulfate is sodium lauryl sulfate, disodium 3,3-dithiobispropane-sulphonate, or 3, 3′-dithiobispropanesulfonic acid.
5 . (canceled)
6 . The method of claim 1 , wherein the non-dye leveler is
7 . A copper layer having a Z-axis preferred growth orientation prepared by the method of claim 1 , comprising:
a wafer substrate,
an adhesive layer,
a copper seed layer, and
an electroplated copper layer,
wherein the electroplating copper layer includes a bamboo-like crystal structure in the Z-axis preferred growth orientation, and the bamboo-like crystal structure includes larger crystal size and less crystal boundaries in a Z-axis direction than in an X-axis direction.
8 . The copper layer of claim 7 , wherein the wafer substrate is a silicon or silicon germanium semiconductor substrate, chip or device, and the adhesive layer is a titanium layer.